SSM6J07FU TOSHIBA Transistor Silicon P Channel MOS Type SSM6J07FU Power Management Switch High Speed Switching Applications • Small package • Low on resistance Unit: mm : Ron = 450 mΩ (max) (VGS = −10 V) : Ron = 800 mΩ (max) (VGS = −4 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS −30 V Gate-source voltage VGSS ±20 V DC ID −0.8 Pulse IDP −1.6 Drain current Drain power dissipation PD (Note 1) A 300 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C JEDEC ― JEITA ― Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2J1D high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 6.8 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: Note 1: Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm × 6) Marking 6 Equivalent Circuit (top view) 5 4 6 5 Figure 1: 25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm2 × 6 4 0.8 mm 0.4 mm KDF 1 2 3 1 2 3 1 2007-11-01 SSM6J07FU Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current IGSS Drain-source breakdown voltage V (BR) DSS Drain cut-off current IDSS Gate threshold voltage Vth ⏐Yfs⏐ Forward transfer admittance Drain-source ON resistance RDS (ON) Test Condition VGS = ±16 V, VDS = 0 ID = −1 mA, VGS = 0 VDS = −30 V, VGS = 0 VDS = −5 V, ID = −0.1 mA Min Typ. Max Unit ⎯ ⎯ ±1 μA −30 ⎯ ⎯ V ⎯ ⎯ −1 μA −1.1 ⎯ −1.8 V VDS = −5 V, ID = −0.4 A (Note2) 0.7 ⎯ ⎯ S ID = −0.4 A, VGS = −10 V (Note2) ⎯ 350 450 ID = −0.4 A, VGS = −4 V (Note2) ⎯ 570 800 ID = −0.4 A, VGS = −3.3 V (Note2) ⎯ 0.7 1.6 Ω mΩ Input capacitance Ciss VDS = −15 V, VGS = 0, f = 1 MHz ⎯ 130 ⎯ pF Reverse transfer capacitance Crss VDS = −15 V, VGS = 0, f = 1 MHz ⎯ 16 ⎯ pF Output capacitance Coss VDS = −15 V, VGS = 0, f = 1 MHz ⎯ 52 ⎯ pF Switching time Turn-on time ton VDD = −15 V, ID = −0.4 A, ⎯ 28 ⎯ ns Turn-off time toff VGS = 0~−4 V, RG = 10 Ω ⎯ 38 ⎯ ns Note 2: Pulse test Switching Time Test Circuit (a) Test circuit (b) VIN ID 0 0V Output Input 10 μs 90% −4 V RG −4 V 10% VDD (c) VOUT VDD = −15 V RG = 10 Ω D.U. < = 1% Input: tr, tf < 5 ns Common source Ta = 25°C VDS (ON) VDD 90% 10% tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. 2 2007-11-01 SSM6J07FU ID – VDS ID – VGS −2 −3000 Common Source −1000 Ta = 25°C −4 (mA) −3.3 −1 −3.0 −2.8 −0.5 −2.6 −0.5 −1 −1.5 Drain-Source voltage Ta = 100°C 25°C −100 −25°C −10 −1 −0.1 VGS = −2.4 V 0 0 Common Source VDS = −5 V −1.5 Drain current ID Drain current ID (A) −10 −0.01 0 −2 −0.5 −1 −1.5 −2.5 Gate-Source voltage VDS (V) RDS (ON) – ID −3 −3.5 125 150 1.2 1.4 VGS (V) RDS (ON) – Ta 1600 1600 Common Source Common Source 1400 1400 ID = −0.4 A Drain-Source on resistance RDS (ON) (mΩ) Ta = 25°C Drain-Source on resistance RDS (ON) (mΩ) −2 1200 1000 VGS = −3.3 V 800 −4 V 600 −10 V 400 200 1200 1000 VGS = −3.3 V 800 −4 V 600 −10 V 400 200 0 0 −0.5 −1 −1.5 0 −25 −2 0 25 Drain current ID (A) 50 75 100 Ambient temperature Ta (°C) |Yfs| – ID IDR – VDS Common Source −2 VDS = −5 V Common Source 3 Ta = 25°C Drain reverse current IDR (A) Forward transfer admittance |Yfs| (S) 10 1 0.3 0.1 0.03 0.01 −0.01 −0.03 −0.1 −0.3 −1 −3 VGS = 0 −1.5 Drain current ID (A) 3 D IDR G S −1 −0.5 0 0 −10 Ta = 25°C 0.2 0.4 0.6 0.8 1 Drain-Source voltage VDS (V) 2007-11-01 SSM6J07FU C – VDS t – ID 1000 500 500 300 VDD = −15 V VGS = 0~−4 V toff Switching time t (ns) (pF) Capacitance C Common Source Ciss 100 50 Coss Common Source Crss 10 VGS = 0 V f = 1 MHz 100 −0.5 −1 −5 Drain-Source voltage −10 tf 50 30 ton Ta = 25°C 5 −0.1 Rg = 10 Ω Ta = 25°C 10 −50 −100 tr VDS (V) 5 −0.01 −0.03 −0.1 −0.3 −1 Drain current ID (A) Safe Operating Area PD – Ta −10 350 ID max (pulse) * 1 ms Drain current ID (A) ID max Power dissipation PD 10 ms −1 100 ms (continuous) −0.1 (mW) Mounted on FR4 board DC operation Ta = 25°C (25.4 mm × 25.4 mm × 1.6 t, 2 Cu pad: 0.32 mm × 6) 250 Figure 1 200 150 100 50 Mounted on FR4 board (25.4 mm × 25.4 mm ×1.6 t 2 Cu pad: 0.32 mm × 6) Figure 1 −0.01 300 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) * Single non-repetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −0.001 −0.1 VDSS max −1 Drain-Source voltage −10 −100 VDS (V) 4 2007-11-01 SSM6J07FU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01