TOSHIBA TLP2200_07

TLP2200
TOSHIBA Photocoupler
GaAℓAs Ired & Photo-IC
TLP2200
Isolated Buss Driver
High Speed Line Receiver
Microprocessor System Interfaces
MOS FET Gate Driver
Direct Replacement For HCPL−2200
Unit in mm
The TOSHIBA TLP2200 consists of a GaAℓAs light
emitting diode and integrated high gain, high speed
photodetector.
This unit is 8−lead DIP package.
The detector has a three state output stage that
eliminates the need for pull−up resistor, and built−in
schmitt trigger. The detector IC has an internal shield
that provides a guaranteed common mode transient
immunity of 1000V / μs.
z Input current: IF = 1.6mA
z Power supply voltage: VCC = 4.5~20V
z Switching speed: 2.5MBd guaranteed
TOSHIBA
11−10C4
z Common mode transient immunity: ±1000V / μs (min.)
Weight: 0.54 g
z Guaranteed performance over temp: 0~85°C
z Isolation voltage: 2500Vrms(min.)
Pin Configuration (top view)
z UL recognized: UL1577, file No. E67349
1
Truth Table (positive logic)
VCC
7
2
Input
Enable
Output
H
L
H
L
H
H
L
L
Z
Z
H
L
8
6
3
GND
4
SHIELD
5
1: N.C.
2: Anode
3: Cathode
4: N.C.
5: GND
6: VE (enable)
7: VO (output)
8: VCC
Schematic
ICC
IF
IO
8
IE
7
2
VF
3
6
SHIELD
1
5
VCC
VO
VE
GND
2007-10-01
TLP2200
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Input current, on
IF(ON)
1.6
Input current, off
IF(OFF)
0
Supply voltage
VCC
4.5
―
20
V
Enable voltage high
VEH
2.0
―
20
V
Enable voltage low
VEL
0
―
0.8
V
N
―
―
4
―
Topr
0
―
85
°C
Fan out (TTL load)
Operating temperature
Max.
Unit
―
5
mA
―
0.1
mA
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Absolute Maximum Ratings (no derating required up to 70°C)
D e t e c t o r
L E D
Characteristic
Symbol
Rating
Unit
IF
10
mA
IFPT
1
A
VR
5
V
IO
25
mA
Supply voltage
VCC
−0.5~20
V
Output voltage
VO
−0.5~20
V
Three state enable voltage
VE
−0.5~20
V
PT
210
mW
Forward current
Peak transient forward current
(Note 1)
Reverse voltage
Output current
Total package power dissipation
(Note 2)
Operating temperature range
Topr
−40~85
°C
Storage temperature range
Tstg
−55~125
°C
Lead solder temperature (10s) (**)
Tsol
260
°C
Isolation voltage (AC 1min., R.H. ≤ 60%,Ta = 25°C)
(Note 3)
BVS
2500
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Pulse width 1μs 300pps.
(Note 2) Derate 4.5mW / °C above 70°C ambient temperature.
(Note 3) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5,6,7 and 8 shorted
together
(**)
1.6mm below seating plane.
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TLP2200
Electrical Characteristics (unless otherwise specified, Ta = 0~85°C,VCC = 4.5~20V,
IF(ON) = 1.6~5mA, IF(OFF) = 0~0.1mA, VEL = 0~0.8V,VEH = 2.0~20V)
Characteristic
Symbol
Test Condition
Typ.*
Max.
Unit
―
―
―
2
100
500
μA
Output leakage current
(VO > VCC)
IOHH
IF = 5mA,
VCC = 4.5V
Logic low output voltage
VOL
IOL = 6.4mA (4 TTL load)
―
0.32
0.5
V
Logic high output voltage
VOH
IOH = −2.6mA
2.4
3.4
―
V
Logic low enable current
IEL
VE = 0.4V
―
−0.13
−0.32
mA
Logic high enable current
IEH
VE = 2.7V
VE = 5.5V
VE = 20V
―
―
―
―
―
0.01
20
100
250
μA
Logic low enable voltage
VEL
―
―
―
0.8
V
Logic high enable voltage
VEH
―
2.0
―
―
V
Logic low supply current
ICCL
IF = 0mA
VE = don't care
VCC = 5.5V
VCC = 20V
―
―
5
5.6
6.0
7.5
mA
Logic high supply current
ICCH
IF = 5mA
VE = don't care
VCC = 5.5V
VCC = 20V
―
―
2.5
2.8
4.5
6.0
mA
IOZL
IF = 5mA
VE = 2V
VO = 0.4V
―
1
−20
IOZH
IF = 0mA
VE = 2V
IOSL
IF = 0mA
VO = 2.4V
VO = 5.5V
VO = 20V
VO = VCC = 5.5V
VO = VCC = 20V
―
―
―
25
40
―
―
0.01
55
80
20
100
500
―
―
IOSH
IF = 5mA
VO = GND
VCC = 5.5V
VCC = 20V
−10
−25
−25
−60
―
―
mA
IHYS
VCC = 5V
―
0.05
―
mA
IF = 5mA, Ta = 25°C
―
1.55
1.7
V
IF = 5mA
―
−2.0
―
mV / °C
High impedance state
output current
Logic low short circuit
output current
(Note 4)
Logic high short circuit
output current
(Note 4)
Input current hysteresis
Input forward voltage
Temperature coefficient of
forward voltage
VF
ΔVF / ΔTa
VO = 5.5V
VO = 20V
Min.
μA
mA
Input reverse breakdown
voltage
BVR
IR = 10μA, Ta = 25°C
5
―
―
V
Input capacitance
CIN
VF = 0V, f = 1MHz, Ta = 25°C
―
45
―
pF
Resistance (input−output)
RI−O
VI−O = 500V R.H. ≤ 60%
(Note 3) 5×10
―
Ω
Capacitance (input−output)
CI−O
VI−O = 0V, f = 1MHz
(Note 3)
―
pF
―
10
10
14
0.6
(**) All typ. values are at Ta = 25°C, VCC = 5V, IF(ON) = 3mA unless otherwise specified.
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2007-10-01
TLP2200
Switching Characteristics
(unless otherwise specified, Ta = 0~85°C,VCC = 4.5~20V,IF(ON) = 1.6~5mA,IF(OFF) = 0~0.1mA)
Characteristic
Symbol
Propagation delay time to
logic high output level
Test
Cir−
cuit
Test Condition
Without peaking capacitor
C1
With peaking capacitor C1
Without peaking capacitor
C1
tpLH
(Note 5)
Propagation delay time to
logic low output level
tpHL
1
(Note 5)
Output rise time (10−90%)
Output fall time (90−10%)
Output enable time to
logic high
Output enable time to
logic low
Output disable time from
logic high
Output disable time from
logic low
Common mode transient
immunity at logic high
output
(Note 6)
Common mode transient
immunity at logic low
output
(Note 6)
With peaking capacitor C1
Min.
Typ.
Max.
―
235
―
―
―
400
―
250
―
―
―
400
Unit
ns
ns
tr
tf
―
―
―
35
20
―
―
ns
ns
tpZH
―
―
―
―
ns
―
―
―
―
ns
tpHZ
―
―
―
―
ns
tpLZ
―
―
―
―
ns
−1000
―
―
V / μs
1000
―
―
V / μs
tpZL
2
IF = 1.6mA, VCM = 50V,
CMH
Ta = 25°C
3
IF = 0mA, VCM = 50V,
CML
Ta = 25°C
(*) All typ. values are at Ta = 25°C, VCC = 5V, IF(ON) = 3mA unless otherwise specified.
(Note 4) Duration of output short circuit time should not exceed 10ms.
(Note 5) The tpLH propagation delay is measured from the 50% point on the leading edge of the input pulse to the
1.3V point on the leading edge of the output pulse.
The tpHL propagation delay is measured from the 50% point on the trailing edge of the input pulse to the
1.3V point on the trailing edge of the output pulse.
(Note 6) CML is the maximum rate of rise of the common mode voltage that can be sustained with the output
voltage in the logic low state (VO ≤ 0.8V).
CMH is the maximum rate of fall of the common mode voltage that can be sustained with the output
voltage in the logic high state (VO ≤ 2.0V).
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TLP2200
tpHL, tpLH, tr and tf
Output VO
Pulse
Monitoring
Generator
Node
tr = tf = 5ns
VCC
IF(ON)
1
50%
Input IF
tpLH
0mA
tpHL
Monitoring
VOH
90%
Output VO
tf
tr
2.15kΩ
IF(ON)
Node
1.3V
10%
R1
Input
1.6mA
1.1kΩ
3mA
8
2
7
3
6
D1~D4
: 1S1588
D1
GND
4
R1
VOL
VCC
5V
619Ω
VO = 5V
D2
CL
D3
5kΩ
Test Circuit 1
5
D4
C1=120pF
C1 is peaking capacitor. The probe and jig
681Ω
capacitances are include in C1.
CL is approximately 15pF which includes probe
5mA
and stray wiring capacitance.
Test Circuit 2 tpHZ, tpZH, tpLZ and tpZL
Pulse
5V
Generator
ZO = 50Ω
VCC
VO
1
1.3V
Output VO
IF=IF (OFF)
tPZL
S1 Closed
S2 Open
Output VO
IF=IF (ON)
S1 Open
S2 Closed
1.3V
tPLZ
0V
S1 and S2
0.5V
Closed
VOL
tPZH
1.3V
0V
tPHZ 0.5V
VOH
~1.5V
~
IF
Input VE
Monitoring
VCC
8
2
7
3
6
4
GND
5
D1~D4
: 1S1588
D1
CL
D2
D3
5kΩ
3.0V
Input VE
S1
619Ω
tr = tf = 5ns
D4
S2
Node
S1 and S2
Closed
CL is approximately 15pF which includes probe
and stray wiring capacitance.
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2007-10-01
TLP2200
Test Circuit 3 Common Mode Transient Immunity
VCC
VCM
Output
50V
90%
IF
10%
0V
B
Output VO
Switch AT A: IF = 1.6mA
VO
Monitor-
A
6
3
VFF
VOH
8
7
2
tf
tr
VCC
1
GND
4
VO(MIN.) (*)
5
ing
Node
0.1μF
Bypass
VCM
+
−
Pulse gen.
ZO = 50Ω
VO(MAX.) (*)
VOL
Switch AT B: IF = 0mA
(*) See note6
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2007-10-01
TLP2200
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2007-10-01