6N138,6N139 TOSHIBA Photocoupler GaAℓAs Ired & Photo IC 6N138, 6N139 Unit in mm Current Loop Driver. Low Input Current Line Receiver. CMOS Logic Interface. The TOSHIBA 6N138 and 6N139 consists of a GaAℓAs infrared emitting diode coupled with a split-Darlington output configuration. A high speed GaAℓAs Ired manufactured with an unique LPE junction, has the virtue of fast rise and fall time at low drive current. • Isolation voltage: 2500Vrms (min.) • Current transfer ratio : 6N138 − 300% (min.) (IF=1.6mA) : 6N139 − 400% (min.) (IF=0.5mA) • Switching time: 6N138 − tPHL=10μs (max.) − tPLH=35μs (max.) TOSHIBA 6N139 − tPHL=1μs (max.) − tPLH=7μs (max.) • 11−10C4 Weight: 0.54 g UL recognized: UL1577, file no. E67349 Pin Configuration (top view) 1 8 2 7 1 : N .C . 2 : Anode 3 : C a th o d e 4 : N .C . 5 : G nd 6 : O u tp u t 6 3 7 : O u tp u t B a s e 8 : VCC 5 4 Schematic VCC 8 2 IF IC C + IO VF 6 VO - 3 7 IB 5 GND VB 1 2007-10-01 6N138,6N139 Absolute Maximum Ratings (*) (Ta = 0°C to + 70°C) Characteristic Forward current (Note 1) LED Pulse forward current Rating Unit IF 20 mA (*1) 40 mA (*2) 1 A IFP Total pulse forward current IFP Reverse voltage Detector Symbol VR 5 V Diode power dissipation (Note 2) PD 35 mW Output current (Note 3) IO 60 mA VEB 0.5 V −0.5 to 18 V −0.5 to 18 V PO 100 mW Topr 0 to 70 °C Tstg −55 to 125 °C Tsol 260 °C 2500 Vrms 3540 Vdc Emitter−base reverse voltage (*3) Supply voltage VCC (*3) Output voltage VO Output power dissipation (Note 4) Operating temperature range Storage temperature range Lead solder temperature (10s) (*4) Isolation voltage (1min., R.H.≤ 60%) (**) BVS Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (*) JEDEC registered data (**) Not registered JEDEC (*1) 50% duty cycle, 1ms pulse width (*2) Pulse width 1μs, 300pps (*3) 6N138… −0.5 to 7V (*4) 1.6mm below seating plane 2 2007-10-01 6N138,6N139 Electrical Characteristics Over Recommended Temperature (Ta = 0°C to 70°C, unless otherwise noted) Characteristic Current transfer ratio Symbol 6N139 (Note 5, 6) VOL 6N138 Logic high output current 6N139 (Note 6) 6N138 Temperature coefficient of forward voltage 400 800 ⎯ IF=1.6mA, VO=0.4V VCC=4.5V 500 900 ⎯ 300 600 ⎯ IF=1.6mA, IO=6.4mA VCC=4.5V ⎯ 0.1 0.4 IF=5mA, IO=15mA VCC=4.5V ⎯ 0.1 0.4 IF=12mA, IO=24mA VCC=4.5V ⎯ 0.2 0.4 IF=1.6mA, IO=4.8mA VCC=4.5V ⎯ 0.1 0.4 IOH(*) IF=0mA, VO=VCC=18V ⎯ 0.05 100 IF=0mA, VO=VCC=7V ⎯ 0.05 250 Unit % V μA ICCL IF=1.6mA, VO=Open VCC=5V ⎯ 0.2 ⎯ mA (Note 6) ICCH IF=0mA, VO=Open, VCC=5V ⎯ 10 ⎯ nA VF(*) IF=1.6mA, Ta=25°C ⎯ 1.65 1.7 V BVR(*) IR=10μA, Ta=25°C 5 ⎯ ⎯ V ⎯ −1.9 ⎯ mV / °C ⎯ 60 ⎯ pF ⎯ Ω ⎯ pF Logic high supply current Input reverse breakdown voltage Max. (Note 6) Logic low supply current Input forward voltage (*5)Typ. CTR(*) 6N139 (Note 6) Min. IF=0.5mA, VO=0.4V VCC=4.5V 6N138 Logic low output voltage Test Condition ΔVF / ΔTa IF=1.6mA Input capacitance CIN f=1MHz, VF=0 Resistance (input−output) RI−O VI−O=500V R.H.≤ 60% (Note 7), ⎯ 10 Capacitance (input−output) CI−O f=1MHz (Note 7) ⎯ 0.6 12 (**) JEDEC registered data. (*5) All typicals at Ta=25°C and VCC=5V, unless otherwise noted. 3 2007-10-01 6N138,6N139 Switching Specifications (Ta=25°C, VCC=5V, unless otherwise specified) Characteristic Propagation delay time to logic low at output (Note 6, 8) Propagation delay time to logic high at output (Note 6, 8) Common mode transient immunity at logic high level output Common mode transient immunity at logic low level output 6N139 Symbol Test Circuit tpHL(*) 1 6N138 6N139 tpLH(*) 1 6N138 (Note 9) (Note 9) Test Condition Min. Typ. Max. IF=0.5mA, RL=4.7kΩ ⎯ 5 25 IF=12mA, RL=270Ω ⎯ 0.2 1 IF=1.6mA, RL=2.2kΩ ⎯ 1 10 IF=0.5mA, RL=4.7kΩ ⎯ 5 60 IF=12mA, RL=270Ω ⎯ 1 7 IF=1.6mA, RL=2.2kΩ ⎯ 4 35 Unit μs μs CMH 2 IF=0mA, RL=2.2kΩ VCM=400Vp−p ⎯ 500 ⎯ V / μs CML 2 IF=1.6mA RL=2.2kΩ VCM=400Vp−p ⎯ −500 ⎯ V / μs (*)JEDEC registered data. (Note 1): (Note 2): (Note 3): (Note 4): (Note 5): (Note 6): (Note 7): (Note 8): (Note 9): Derate linearly above 50°C free−air temperature at a rate of 0.4mA / °C Derate linearly above 50°C free−air temperature at a rate of 0.7mW / °C Derate linearly above 25°C free−air temperature at a rate of 0.7mA / °C Derate linearly above 25°C free−air temperature at a rate of 2.0mW / °C DC CURRENT TRANSFER RATIO is defined as the ratio of output collector current, IO, to the forward LED input current, IF, times 100%. Pin 7 open. Device considered a two−terminal device: Pins 1, 2, 3, and 4 shorted together and Pins 5, 6, 7 and 8 shorted together. Use of a resistor between pin 5 and 7 will decrease gain and delay time. Common mode transient immunity in logic high level is the maximum tolerable (positive) dvCM / dt on the leading edge of the common mode pulse, VCM, to assure that the output will remain in a logic high state (i.e., VO > 2.0V). Common mode transient immunity in Logic Low level is the maximum tolerable (negative) dvCM / dt on the trailing edge of the common mode pulse signal, VCM, to assure that the output will remain in a logic low state (i.e., VO < 0.8V). 4 2007-10-01 6N138,6N139 Test Circuit 1. IF Pulse gen. Zo = 50Ω tf = 5ns 0 5V (Saturated Response) 1.5V 1.5V tpHL VO (NonSaturated Response) 10% 90% VOL tpLH 10% Duty cycle 1 / f < 100μs IF MonitorF 100Ω VO IF 5V 90% 10% 1 8 2 7 3 6 VO 4 5 CL (*) +5V RL tf tr (*)CL is approximately 15pF which includes probe and stray wiring capacitance. Test Circuit 2. VCM 90% 10% tr tf 0V A B 5V VO 1 8 2 7 3 6 4 5 VFF Swith at A : IF = 0mA + VOL VCM RCC +5V RL 400V IF tr, tf = 0.64μs VO － VO Pulse gen Swith at B : IF = 1.6mA 5 2007-10-01 6N138,6N139 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01