FAIRCHILD FJV1845

FJV1845
FJV1845
Amplifier Transistor
• Complement to FJV992
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
120
Units
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
120
5
V
V
IC
Collector Current
50
mA
IB
Base Current
10
mA
PC
Collector Dissipation
300
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
ICBO
Parameter
Collector Cut-off Current
Test Condition
VCB=120V, IE=0
Min.
Typ.
Max.
50
Units
nA
50
nA
IEBO
Emitter Cut-off Current
VEB=5V, IC=0
hFE1
hFE2
DC Current Gain
VCE=6V, IC=0.1mA
VCE=6V, IC=1mA
150
200
580
600
1200
VBE (on)
Base-Emitter On Voltage
VCE=6V, IC=1mA
0.55
0.59
0.65
VCE (sat)
Collector-Emitter Saturation Voltage
IC=10mA, IB=1mA
0.07
0.3
fT
Current Gain Bandwidth Product
VCE=6V, IC=1mA
Cob
Output Capacitance
VCB=30V, IE=0, f=1MHz
50
V
V
110
1.6
MHz
2.5
pF
hFE2 Classification
Classification
P
F
E
U
hFE2
200 ~ 400
300 ~ 600
400 ~ 800
600 ~ 1200
Marking
6E
hFE Classification
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
FJV1845
Typical Characteristics
10
1.0
IB=16µA
IB=1.4µA
IB=1.2µA
IB=1.0µA
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
IB=14µA
8
0.8
IB=12µA
IB=10µA
6
IB=8µA
IB=6µA
4
IB=0.6µA
IB=0.4µA
0.4
IB=4µA
2
IB=0.8µA
0.6
IB=0.2µA
0.2
IB=2µA
0
0.0
0
1
2
3
4
5
0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
hFE, DC CURRENT GAIN
700
600
500
400
300
200
100
0.1
1
10
100
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
VCE = 6V
Pule Test
800
0
0.01
60
80
100
100
IC=10IB
Pulse Test
10
VBE(sat)
1
0.1
0.01
0.1
VCE(sat)
1
10
100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10k
f=1MHz
IE=0
1
0.1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
fT[MHz],
CURRENT GAIN-BANDWIDTH PRODUCT
10
Cob[pF], CAPACITANCE
40
Figure 2. Static Characteristic
1000
900
20
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE=6V
1k
100
10
0.1
1
10
100
IE[mA], EMITTER CURRENT
Figure 6. Current Gain Bandwidth Product
Rev. B1, August 2002
FJV1845
Typical Characteristics (Continued)
500
VCE = 6V
Pulse Test
PC[mW], POWER DISSIPATION
IC[mA], COLLECTOR CURRENT
100
10
1
0.1
0.01
0.4
0.5
0.6
0.7
0.8
0.9
VBE[V], BASE-EMITTER VOLTAGE
Figure 7. Collector Current vs. Base-Emitter Voltage
©2002 Fairchild Semiconductor Corporation
400
300
200
100
0
0
25
50
75
100
125
150
175
o
Ta[ C], CASE TEMPERATURE
Figure 8. Power Derating
Rev. B1, August 2002
FJV1845
Package Dimensions
±0.10
±0.10
2.40
0.40 ±0.03
1.30
0.45~0.60
0.20 MIN
SOT-23
0.03~0.10
0.38 REF
0.40 ±0.03
+0.05
0.12 –0.023
0.96~1.14
0.97REF
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1