TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T TOSHIBA LED Lamp TLRE17T,TLRME17T,TLSE17T TLOE17T,TLYE17T Panel Circuit Indicator Unit in mm · 5mm package · InGaAℓP technology · All plastic mold type · Transparent lens · High intensity light emission · Excellent low current light output · Applications: Outdoor message signboards, safety equipment Line-Up Product Name Color Material TLRE17T Red InGaAℓP TLRME17T Red InGaAℓP TLSE17T Red InGaAℓP TLOE17T Orange InGaAℓP TLYE17T Yellow InGaAℓP JEDEC ― EIAJ ― TOSHIBA Weight: 0.31 g (typ.) Maximum Ratings (Ta = 25°C) Product Name Forward Current IF (mA) Reverse Voltage VR (V) Power Dissipation PD (mW) TLRE17T 50 4 120 TLRME17T 50 4 120 TLSE17T 50 4 120 TLOE17T 50 4 120 TLYE17T 50 4 120 1 Operating Temperature Topr (°C) Storage Temperature Tstg (°C) -40~100 -40~120 2002-09-25 TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T Electrical And Optical Characteristics (Ta = 25°C) λd λp ∆λ IF Min Luminous Intensity IV Typ. IF Typ. Forward Voltage VF Max TLRE17T 630 (644) 20 20 476 1500 20 1.9 2.4 20 50 4 TLRME17T 626 (636) 23 20 850 2400 20 1.9 2.4 20 50 4 TLSE17T 613 (623) 20 20 850 3000 20 1.9 2.4 20 50 4 TLOE17T 605 (612) 20 20 1530 4500 20 2.0 2.4 20 50 4 TLYE17T 587 (590) 17 20 850 3000 20 2.0 2.4 20 50 4 mA µA V Typ. Emission Wavelength Product Name Unit nm mA mcd mA V IF Reverse Current IR Max VR Precautions Please be careful of the following: · Soldering temperature: 260°C max, soldering time: 3s max (Soldering portion of lead: Below the lead stopper) · If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. · This visible LED lamp also emits some IR light. If a photodetector is located near the lED lamp, please ensure that it will not be affected by this IR light. 2 2002-09-25 TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T TLRE17T IV – IF IF – VF 10000 Ta=25℃ (mcd) Ta=25℃ 50 30 Luminous intensity IV Forward current IF (mA) 100 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.2 2.1 1000 100 10 1 2.3 10 Forward current VF (V) 1.0 Relative luminous intensity 0.5 0.3 0.1 -20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 580 80 600 (℃) 620 0° 10° 680 700 100 120 (nm) 80 Ta = 25℃ 10° 660 IF – Ta Radiation Pattern 20° 640 Wavelength λ Allowable forward current IF (mA) Relative luminous intensity IV IF = 20mA Ta= 25℃ 1 20° 30° 30° 40° 40° 50° 50° 60° 60° 70° 70° 60 40 20 80° 80° 90° IF (mA) Relative Luminous Intensity – Wavelength IV – Tc 3 100 0 0.2 0.4 0.6 0.8 0 0 90° 1.0 20 40 60 80 Ambient temperature Ta (℃) 3 2002-09-25 TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T TLRME17T IV – IF IF – VF 10000 Ta=25℃ (mcd) Ta=25℃ 50 30 Luminous intensity IV Forward current IF (mA) 100 10 5 3 11.6 1.7 1.8 1.9 2.0 Forward voltage 2.2 2.1 1000 100 30 1 2.3 10 Forward current VF (V) Relative Luminous Intensity – Wavelength IV – Tc 1.0 RELATIVE LUMINOUS INTENSITY 5 3 1 0.5 0.3 0.1 -20 0 20 60 40 Case temperature Tc IF = 20mA Ta= 25℃ 0.8 0.6 0.4 0.2 0 580 80 600 (℃) 620 10° 10° 20° 30° 30° 40° 40° 50° 50° 60° 60° 70° 70° 700 100 120 (nm) 60 40 20 80° 80° 90° 680 80 Ta = 25℃ 20° 660 IF – Ta Radiation Pattern 0° 640 Wavelength λ Allowable forward current IF (mA) Relative luminous intensity IV 10 100 IF (mA) 0 0.2 0.4 0.6 0.8 0 90° 1.0 0 20 40 60 80 Ambient temperature Ta (℃) 4 2002-09-25 TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T TLSE17T IV – IF IF – VF 10000 Ta=25℃ (mcd) Ta=25℃ 50 30 Luminous intensity IV Forward current IF (mA) 100 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 2.2 1000 100 30 1 2.3 10 Forward current VF (V) Relative Luminous Intensity – Wavelength IV – Tc 1.0 3 100 IF (mA) Relative luminous intensity Ta= 25℃ 1 0.5 0.3 0.1 -20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 560 80 580 (℃) 600 0° 10° 20° 30° 30° 40° 40° 50° 50° 60° 60° 70° 70° 680 100 120 (nm) 60 40 20 80° 80° 90° 660 80 Ta = 25℃ 10° 640 IF – Ta Radiation Pattern 20° 620 Wavelength λ Allowable forward current IF (mA) Relative luminous intensity IV IF = 20mA 0 0.2 0.4 0.6 0.8 0 0 90° 1.0 20 40 60 80 Ambient temperature Ta (℃) 5 2002-09-25 TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T TLOE17T IV – IF IF – VF 10000 Ta=25℃ (mcd) Ta=25℃ 50 30 Luminous intensity IV Forward current IF (mA) 100 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 2.2 1000 100 30 2.3 10 1 Forward current VF (V) 1.0 IF = 20mA Relative luminous intensity Ta= 25℃ 1 0.5 0.3 0.1 -20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 540 80 560 (℃) 580 10° 10° 20° 30° 30° 40° 40° 50° 50° 60° 60° 70° 70° 660 100 120 (nm) 60 40 20 80° 80° 90° 640 80 Ta = 25℃ 20° 620 IF – Ta Radiation Pattern 0° 600 Wavelength λ Allowable forward current IF (mA) Relative luminous intensity IV IF (mA) Relative Luminous Intensity – Wavelength IV – Tc 3 100 0 0.2 0.4 0.6 0.8 0 0 90° 1.0 20 40 60 80 Ambient temperature Ta (℃) 6 2002-09-25 TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T TLYE17T IF – VF IV – IF 10000 Ta=25℃ (mcd) Ta=25℃ 50 30 Luminous intensity IV Forward current IF (mA) 100 10 5 3 1 1.6 1.7 1.9 1.8 2.0 Forward voltage 2.1 1000 10 2.3 2.2 100 Forward current VF (V) IV – Tc 1.0 3 100 IF (mA) Relative Luminous Intensity – Wavelength IF = 20mA Relative luminous intensity Ta= 25℃ 1 0.5 0.3 0.1 -20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 540 80 540 (℃) 580 0° 10° 20° 30° 30° 40° 40° 50° 50° 60° 60° 70° 70° 660 100 120 (nm) 60 40 20 80° 80° 90° 640 80 Ta = 25℃ 10° 620 IF – Ta Radiation Pattern 20° 600 Wavelength λ Allowable forward current IF (mA) Relative luminous intensity IV 10 1 0 0.2 0.4 0.6 0.8 0 0 90° 1.0 20 40 60 80 Ambient temperature Ta (℃) 7 2002-09-25 TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T RESTRICTIONS ON PRODUCT USE 000707EAC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 8 2002-09-25