TOSHIBA TLYE17T

TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T
TOSHIBA LED Lamp
TLRE17T,TLRME17T,TLSE17T
TLOE17T,TLYE17T
Panel Circuit Indicator
Unit in mm
·
5mm package
·
InGaAℓP technology
·
All plastic mold type
·
Transparent lens
·
High intensity light emission
·
Excellent low current light output
·
Applications: Outdoor message signboards, safety equipment
Line-Up
Product
Name
Color
Material
TLRE17T
Red
InGaAℓP
TLRME17T
Red
InGaAℓP
TLSE17T
Red
InGaAℓP
TLOE17T
Orange
InGaAℓP
TLYE17T
Yellow
InGaAℓP
JEDEC
―
EIAJ
―
TOSHIBA
Weight: 0.31 g (typ.)
Maximum Ratings (Ta = 25°C)
Product
Name
Forward
Current
IF (mA)
Reverse
Voltage
VR (V)
Power
Dissipation
PD (mW)
TLRE17T
50
4
120
TLRME17T
50
4
120
TLSE17T
50
4
120
TLOE17T
50
4
120
TLYE17T
50
4
120
1
Operating
Temperature
Topr (°C)
Storage
Temperature
Tstg (°C)
-40~100
-40~120
2002-09-25
TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T
Electrical And Optical Characteristics (Ta = 25°C)
λd
λp
∆λ
IF
Min
Luminous
Intensity
IV
Typ.
IF
Typ.
Forward
Voltage
VF
Max
TLRE17T
630
(644)
20
20
476
1500
20
1.9
2.4
20
50
4
TLRME17T
626
(636)
23
20
850
2400
20
1.9
2.4
20
50
4
TLSE17T
613
(623)
20
20
850
3000
20
1.9
2.4
20
50
4
TLOE17T
605
(612)
20
20
1530
4500
20
2.0
2.4
20
50
4
TLYE17T
587
(590)
17
20
850
3000
20
2.0
2.4
20
50
4
mA
µA
V
Typ. Emission
Wavelength
Product
Name
Unit
nm
mA
mcd
mA
V
IF
Reverse
Current
IR
Max
VR
Precautions
Please be careful of the following:
·
Soldering temperature: 260°C max, soldering time: 3s max
(Soldering portion of lead: Below the lead stopper)
·
If the lead is formed, the lead should be formed up to 5 mm from the body of the device without
forming stress to the resin. Soldering should be performed after lead forming.
·
This visible LED lamp also emits some IR light.
If a photodetector is located near the lED lamp, please ensure that it will not be affected by this
IR light.
2
2002-09-25
TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T
TLRE17T
IV – IF
IF – VF
10000
Ta=25℃
(mcd)
Ta=25℃
50
30
Luminous intensity IV
Forward current
IF (mA)
100
10
5
3
1
1.6
1.7
1.8
1.9
2.0
Forward voltage
2.2
2.1
1000
100
10
1
2.3
10
Forward current
VF (V)
1.0
Relative luminous intensity
0.5
0.3
0.1
-20
0
20
60
40
Case temperature Tc
0.8
0.6
0.4
0.2
0
580
80
600
(℃)
620
0°
10°
680
700
100
120
(nm)
80
Ta = 25℃
10°
660
IF – Ta
Radiation Pattern
20°
640
Wavelength λ
Allowable forward current
IF (mA)
Relative luminous intensity IV
IF = 20mA
Ta= 25℃
1
20°
30°
30°
40°
40°
50°
50°
60°
60°
70°
70°
60
40
20
80°
80°
90°
IF (mA)
Relative Luminous Intensity –
Wavelength
IV – Tc
3
100
0
0.2
0.4
0.6
0.8
0
0
90°
1.0
20
40
60
80
Ambient temperature Ta (℃)
3
2002-09-25
TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T
TLRME17T
IV – IF
IF – VF
10000
Ta=25℃
(mcd)
Ta=25℃
50
30
Luminous intensity IV
Forward current
IF (mA)
100
10
5
3
11.6
1.7
1.8
1.9
2.0
Forward voltage
2.2
2.1
1000
100
30
1
2.3
10
Forward current
VF (V)
Relative Luminous Intensity –
Wavelength
IV – Tc
1.0
RELATIVE LUMINOUS INTENSITY
5
3
1
0.5
0.3
0.1
-20
0
20
60
40
Case temperature Tc
IF = 20mA
Ta= 25℃
0.8
0.6
0.4
0.2
0
580
80
600
(℃)
620
10°
10°
20°
30°
30°
40°
40°
50°
50°
60°
60°
70°
70°
700
100
120
(nm)
60
40
20
80°
80°
90°
680
80
Ta = 25℃
20°
660
IF – Ta
Radiation Pattern
0°
640
Wavelength λ
Allowable forward current
IF (mA)
Relative luminous intensity IV
10
100
IF (mA)
0
0.2
0.4
0.6
0.8
0
90°
1.0
0
20
40
60
80
Ambient temperature Ta (℃)
4
2002-09-25
TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T
TLSE17T
IV – IF
IF – VF
10000
Ta=25℃
(mcd)
Ta=25℃
50
30
Luminous intensity IV
Forward current
IF (mA)
100
10
5
3
1
1.6
1.7
1.8
1.9
2.0
Forward voltage
2.1
2.2
1000
100
30
1
2.3
10
Forward current
VF (V)
Relative Luminous Intensity –
Wavelength
IV – Tc
1.0
3
100
IF (mA)
Relative luminous intensity
Ta= 25℃
1
0.5
0.3
0.1
-20
0
20
60
40
Case temperature Tc
0.8
0.6
0.4
0.2
0
560
80
580
(℃)
600
0°
10°
20°
30°
30°
40°
40°
50°
50°
60°
60°
70°
70°
680
100
120
(nm)
60
40
20
80°
80°
90°
660
80
Ta = 25℃
10°
640
IF – Ta
Radiation Pattern
20°
620
Wavelength λ
Allowable forward current
IF (mA)
Relative luminous intensity IV
IF = 20mA
0
0.2
0.4
0.6
0.8
0
0
90°
1.0
20
40
60
80
Ambient temperature Ta (℃)
5
2002-09-25
TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T
TLOE17T
IV – IF
IF – VF
10000
Ta=25℃
(mcd)
Ta=25℃
50
30
Luminous intensity IV
Forward current
IF (mA)
100
10
5
3
1
1.6
1.7
1.8
1.9
2.0
Forward voltage
2.1
2.2
1000
100
30
2.3
10
1
Forward current
VF (V)
1.0
IF = 20mA
Relative luminous intensity
Ta= 25℃
1
0.5
0.3
0.1
-20
0
20
60
40
Case temperature Tc
0.8
0.6
0.4
0.2
0
540
80
560
(℃)
580
10°
10°
20°
30°
30°
40°
40°
50°
50°
60°
60°
70°
70°
660
100
120
(nm)
60
40
20
80°
80°
90°
640
80
Ta = 25℃
20°
620
IF – Ta
Radiation Pattern
0°
600
Wavelength λ
Allowable forward current
IF (mA)
Relative luminous intensity IV
IF (mA)
Relative Luminous Intensity –
Wavelength
IV – Tc
3
100
0
0.2
0.4
0.6
0.8
0
0
90°
1.0
20
40
60
80
Ambient temperature Ta (℃)
6
2002-09-25
TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T
TLYE17T
IF – VF
IV – IF
10000
Ta=25℃
(mcd)
Ta=25℃
50
30
Luminous intensity IV
Forward current
IF (mA)
100
10
5
3
1
1.6
1.7
1.9
1.8
2.0
Forward voltage
2.1
1000
10
2.3
2.2
100
Forward current
VF (V)
IV – Tc
1.0
3
100
IF (mA)
Relative Luminous Intensity –
Wavelength
IF = 20mA
Relative luminous intensity
Ta= 25℃
1
0.5
0.3
0.1
-20
0
20
60
40
Case temperature Tc
0.8
0.6
0.4
0.2
0
540
80
540
(℃)
580
0°
10°
20°
30°
30°
40°
40°
50°
50°
60°
60°
70°
70°
660
100
120
(nm)
60
40
20
80°
80°
90°
640
80
Ta = 25℃
10°
620
IF – Ta
Radiation Pattern
20°
600
Wavelength λ
Allowable forward current
IF (mA)
Relative luminous intensity IV
10
1
0
0.2
0.4
0.6
0.8
0
0
90°
1.0
20
40
60
80
Ambient temperature Ta (℃)
7
2002-09-25
TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T
RESTRICTIONS ON PRODUCT USE
000707EAC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
8
2002-09-25