TLN217 TOSHIBA Infrared LED GaAℓAs Infrared Emitter Preliminary TLN217 Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus Unit: mm The TLN217 is a high output infrared LED employing a new structure of GaAℓAs current confining LED chip. · Optical radiation of current confining LED chip is condensed by clear resin lens. · High output and low forward voltage · Peak emission wavelength: λp = 870 nm (typ.) · Spectral line half width: ∆λ = 35 nm (typ.) · Effective emission diameter: 210 ×466 µm (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Pulse forward current IFP (Note 1) JEDEC ― JEITA ― A TOSHIBA ― Weight: 0.18 g (typ.) Rating Unit 1.1 Reverse voltage VR 1 V Operating temperature Topr -25 to 60 °C Storage temperature Tstg -40 to 90 °C Note 1: Total 30000 cycles (total power applied time is 7.8 h). One cycle takes 137-ms power applied time and 800-ms pause time under the drive condition of 2.6 kHz frequency and 13.2% duty cycle. IFP 50 ms 1 2 360 1 OFF Total 30000 cycles (t = 7.8 h) 330 ms One cycle = 937 ms 1 2002-02-20 TLN217 Optical and Electrical Characteristics (Ta = 25°C) Characteristics Pulse forward voltage Symbol Min Typ. Max Unit IFP = 300 mA, t = 10 ms ¾ 1.6 1.75 V IR VR = 1 V ¾ ¾ 100 mA X Half value of peak (Note 2) ¾ 466 ¾ Y Half value of peak (Note 2) ¾ 210 ¾ fe IFP = 300 mA, t = 10 ms (Note 3) 12 17 ¾ mW VFP Reverse current Effective emission spot size Radiation flux Test Condition mm 1 2 IF = 50 mA ¾ ±32.5 ¾ ° Peak emission wavelength lp IF = 50 mA 850 870 900 nm Spectral line half width Dl IF = 50 mA ¾ 35 ¾ nm q Half value angle Note 2: The directions of X and Y are in the following diagram. The shaded area represents the emitting surface. Y (LED chip) X Note 3: Luminous radiation output to effective angle = ±25° Precaution · Soldering temperature: 260°C (max) Soldering time: 5 s (max) (Soldering must be performed 2 mm from the bottom of the package.) · When forming the leads, bend each lead under the 2 mm from the body of the device. Soldering must be performed after the leads have been formed. · The TLN217 is intended for a camera AF use only. Please do not use this device except for a camera. 2 2002-02-20 TLN217 fe – IFP (typ.) IFP – VFP 600 IFP Ta = -20°C 40 30 Pulse forward current Be (mW) 50 Radiation flux (typ.) 800 (mA) 60 25 60 20 10 400 Ta = 60°C 200 25 -20 0 0 200 400 Pulse forward current 600 IFP 0 0 800 1 (mA) 2 Pulse forward voltage VFP Wavelength characteristic Radiation pattern 1 3 (V) (typ.) Ta = 25°C IF = 50 mA Ta = 25°C 0.8 20° 10° 0° 10° Relative intensity 30° 20° 30° 40° 40° 50° 0.6 50° 60° 60° 70° 0.4 70° 80° 90° 0.2 0 780 80° 0 0.2 0.4 0.6 0.8 90° 1.0 Relative intensity 800 820 840 860 Wavelength l 880 900 920 940 (nm) 3 2002-02-20 TLN217 RESTRICTIONS ON PRODUCT USE 000707EAC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 4 2002-02-20