SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J13T Power Management Switch High Speed Switching Applications · · · Unit: mm Small Package Low on Resistance : Ron = 70 mΩ (max) (@VGS = −4 V) : Ron = 95 mΩ (max) (@VGS = −2.5 V) Low Gate Threshold Voltage Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -12 V Gate-Source voltage VGSS ±8 V ID -3.0 DC Drain current Pulse Drain power dissipation IDP A -6.0 (Note 2) PD (Note 1) 1.25 W JEDEC ― ― Channel temperature Tch 150 °C JEITA Storage temperature range Tstg -55~150 °C TOSHIBA 2-3S1A Weight: 10 mg (typ.) Note 1: Mounted on FR4 board 2 (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm , t = 10 s) Note 2: The pulse width limited by max channel temperature. Marking Equivalent Circuit 3 3 KDH 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account 1 2002-03-27 SSM3J13T Electrical Characteristics (Ta = 25°C) Characteristic Symbol Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Test Condition Typ. Max Unit IGSS VGS = ±8 V, VDS = 0 ¾ ¾ ±1 mA V (BR) DSS ID = -1 mA, VGS = 0 -12 ¾ ¾ V V (BR) DSX ID = -1 mA, VGS = 8 V -4 ¾ ¾ V IDSS VDS = -12 V, VGS = 0 ¾ ¾ -1 mA -0.45 ¾ -1.1 V (Note 3) 3.8 ¾ ¾ S ID = -1.5 A, VGS = -4 V (Note 3) ¾ 50 70 ID = -1.5 A, VGS = -2.5 V (Note 3) ¾ 70 95 ID = -1.5 A, VGS = -2.0 V (Note 3) ¾ 90 180 Gate threshold voltage Vth VDS = -3 V, ID = -0.1 mA Forward transfer admittance |Yfs| VDS = -3 V, ID = -1.5 A Drain-Source ON resistance Min RDS (ON) mW Input capacitance Ciss VDS = -10 V, VGS = 0, f = 1 MHz ¾ 890 ¾ pF Reverse transfer capacitance Crss VDS = -10 V, VGS = 0, f = 1 MHz ¾ 203 ¾ pF Output capacitance Coss VDS = -10 V, VGS = 0, f = 1 MHz ¾ 288 ¾ pF Switching time Turn-on time ton VDD = -10 V, ID = -1 A ¾ 48 ¾ Turn-off time toff VGS = 0~-2.5 V, RG = 4.7 W ¾ 120 ¾ ns Note 3: Pulse test Switching Time Test Circuit (a) Test circuit 0 OUT IN RG -2.5 V (b) VIN 10 ms VDD = -10 V RG = 4.7 W D.U. < = 1% VIN: tr, tf < 5 ns COMMON SOURCE Ta = 25°C VDD 0V 10% 90% -2.5 V VDS (ON) 90% (c) VOUT 10% VDD tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device. VGS recommended voltage of -2.5 V or higher to turn on this product. 2 2002-03-27 SSM3J13T ID – VDS -4 ID – VGS -10000 -4 V (mA) -1.4 V -1 -0.5 -1 -1.5 Drain-Source voltage VDS 75°C Ta = 25°C -100 -25°C -10 -1 -0.1 VGS = -1.2 V 0 0 VDS = -3 V ID -1.5 V -2 Drain current Drain current -1000 -1.6 V ID (A) Ta = 25°C -2.0 V -1.8 V -3 Common Source Common Source -2.5 V -0.01 0 -2 (V) -0.5 -1 -1.5 Gate-Source voltage RDS (ON) –ID 500 Common Source Common Source Ta = 25°C ID = -1.5 A Drain-Source on resistance RDS (ON) (mW) 200 150 VGS = -2 V 100 -2.5 V -4 V 50 0 0 -2 -4 Drain current ID Ta = 25°C 400 300 200 100 0 0 -6 (A) -2 -4 -6 Gate-Source voltage VGS (V) 100 Common Common Source 140 Source ID = -1.5 A Forward transfer admittance |Yfs| (S) Drain-Source on resistance RDS (ON) (mW) -8 |Yfs| – ID RDS (ON) – Ta 160 120 (V) RDS (ON) – VGS 250 Drain-Source on resistance RDS (ON) (mW) VGS -2 VGS = -2 V 100 -2.5 V 80 -4 V 60 40 VDS = -3 V Ta = 25°C 10 1 20 0 -25 0 25 50 75 100 125 0.1 -0.01 150 Ambient temperature Ta (°C) -0.1 Drain current 3 -1 ID -10 (A) 2002-03-27 SSM3J13T Vth – Ta C – VDS -1 1400 Common Source VDS = -3 V ID = -0.1 mA (pF) -0.8 VGS = 0 f = 1 MHz Ta = 25°C 1200 -0.6 Capacitance C Gate threshold voltage Vth (V) Common Source -0.4 1000 Ciss 800 600 400 Coss -0.2 200 0 -25 0 25 50 75 100 125 Crss 0 0 150 4 2 Ambient temperature Ta (°C) 6 -3 Common Source Drain reverse current IDR (ns) 300 toff t (V) tf 50 ton Common Source VGS = 0 (A) VDD = -10 V VGS = 0~ -2.5 V Ta = 25°C RG = 4.7 W 500 Switching time 14 IDR – VDS t – ID 30 12 10 Drain-Source voltage VDS 1000 100 8 Ta = 25°C -2 D G S -1 tr 10 -0.01 -0.1 -1 Drain current ID 0 0 -10 (A) 0.4 0.8 Drain-Source voltage VDS 1.2 (V) PD – Ta Drain power dissipation PD (W) 1.5 1.25 Mounted on FR4 board t = 10 s (25.4 mm ´ 25.4 mm ´ 1.6 t, 2 Cu Pad: 645 mm ） 1 0.75 DC 0.5 0.25 0 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 4 2002-03-27 SSM3J13T Safe operating area -10 ID max (pulsed) 10 ms* 10 s* -1 DC operation -0.1 Mounted on FR4 board (25.4 mm ´ 25.4 mm ´ 1.6 t, 2 Cu Pad: 645 mm ) *: Single nonrepetitive Pulse Ta = 25°C Curves must be derated linearly with increase in temperature. -0.01 -0.1 VDSS max -1 -10 Drain-Source voltage VDS -100 (V) rth – tw 1000 rth (°C /W) Single pulse Transient thermal impedance Drain current ID (A) ID max (continuous) 100 Mounted on FR4 board (25.4 mm ´ 25.4 mm ´ 1.6 t, 2 Cu Pad: 645 mm ) 10 1 0.1 0.0001 0.001 0.01 0.1 1 Pulse width 5 tw 10 100 1000 (s) 2002-03-27 SSM3J13T RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2002-03-27