Power Transistors 2SC5393 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ● ● 0.7±0.1 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 600 V VCES 600 V VCEO 400 V Emitter to base voltage VEBO 7 V Peak collector current ICP 10 A Collector current IC 5 A Base current IB 1 A Collector to emitter voltage Collector power TC=25°C dissipation Ta=25°C 40 PC Junction temperature Tj Storage temperature Tstg 4.2±0.2 7.5±0.2 16.7±0.3 φ3.1±0.1 1.4±0.1 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 5V, IC = 0 hFE1 VCE = 5V, IC = 0.1A 10 8 Forward current transfer ratio 1.3±0.2 W 2 ■ Electrical Characteristics 2.7±0.2 4.0 ● High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 4.2±0.2 5.5±0.2 Solder Dip ■ Features ● 10.0±0.2 typ VCB = 600V, IE = 0 max Unit 100 µA 100 µA 60 hFE2 VCE = 5V, IC = 1.5A Collector to emitter saturation voltage VCE(sat) IC = 1.5A, IB = 0.3A Base to emitter saturation voltage VBE(sat) IC = 1.5A, IB = 0.3A Transition frequency fT VCE = 10V, IC = 0.1A, f = 0.5MHz Storage time tstg IC = 2A, IB1 = 0.4A, IB2 = – 0.8A, 2.0 µs Fall time tf VCC = 150V 0.3 µs 1 2 30 V V MHz 1 Power Transistors 2SC5393 PC — Ta (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (1) 40 30 20 (2) 10 Area of safe operation (ASO) 100 Collector current IC (A) Collector power dissipation PC (W) 50 ICP 10 t=500µs IC 1ms 10ms 1s 1 0.1 0.01 (3) (4) 0 0.001 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V)