Transistors 2SB1219, 2SB1219A Silicon PNP epitaxial planer type (0.425) Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 • Large collector current IC • S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.9+0.2 –0.1 ■ Features 0.9±0.1 3 2 0.2±0.1 1 (0.65) (0.65) 1.3±0.1 2.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C Collector to base voltage 2SB1219 Collector to emitter voltage 2SB1219 Symbol Rating Unit VCBO −30 V 0 to 0.1 Parameter 10° −60 2SB1219A −25 VCEO V 1: Base 2: Emitter 3: Collector −50 2SB1219A Emitter to base voltage VEBO −5 V Peak collector current ICP −1 A Collector current IC −500 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C EIAJ: SC-70 S-Mini Type Package Marking Symbol • 2SB1219 : C • 2SB1219A : D ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol 2SB1219 Collector to emitter voltage 2SB1219 Min ICBO VCB = −20 V, IE = 0 VCBO IC = −10 µA, IE = 0 VCEO IC = −2 mA, IB = 0 VEBO IE = −10 µA, IC = 0 −5 Collector cutoff current Collector to base voltage Conditions Typ Max Unit − 0.1 µA −30 V −60 2SB1219A −25 V −50 2SB1219A Emitter to base voltage V VCE = −10 V, IC = −150 mA 85 hFE2 VCE = −10 V, IC = −500 mA 40 Collector to emitter saturation voltage *1 VCE(sat) IC = −300 mA, IB = −30 mA − 0.35 − 0.6 V Base to emitter saturation voltage *1 VBE(sat) IC = −300 mA, IB = −30 mA −1.1 −1.5 V VCB = −10 V, IE = 50 mA, f = 200 MHz 200 Forward current transfer ratio *1 hFE1 Transition frequency fT Collector output capacitance Cob *2 VCB = −10 V, IE = 0, f = 1 MHz 340 6 MHz 15 pF Note) *1: Pulse measurement *2: Rank classification Rank hFE1 Q R S No-rank 85 to 170 120 to 240 170 to 340 85 to 340 Marking 2SB1219 CQ CR CS C symbol 2SB1219A DQ DR DS D Product of no-rank is not classified and have no indication for rank. 1 2SB1219, 2SB1219A Transistors PC Ta IC VCE −500 −400 120 −400 −1 mA −300 −200 −100 −100 40 80 120 0 160 −4 0 −10 −3 Ta = 75°C 25°C −100 Base to emitter saturation voltage VBE(sat) (V) IC / IB = 10 0 −20 −10 −3 25°C Ta = −25°C −1 −3 −10 75°C − 0.01 − 0.01 − 0.03 − 0.1 − 0.3 200 160 120 80 40 2 3 5 10 20 30 50 Emitter current IE (mA) 100 Collector output capacitance Cob (pF) VCB = −10 V Ta = 25°C −3 300 Ta = 75°C 25°C −25°C 200 100 0 − 0.01 − 0.03 − 0.1 − 0.3 −10 16 12 8 4 0 −1 −2 −3 −5 −10 −1 −3 −10 Collector current IC (A) VCER RBE IE = 0 f = 1 MHz Ta = 25°C 20 −10 400 Cob VCB 24 −8 500 −20−30 −50 −100 Collector to base voltage VCB (V) −120 Collector to emitter voltage VCER (V) fT IE 240 −6 VCE = −10 V Collector current IC (A) Collector current IC (A) 1 −1 −4 600 − 0.03 − 0.03 −1 −2 Base current IB (mA) IC / IB = 10 −30 − 0.1 − 0.01 − 0.01 − 0.03 − 0.1 − 0.3 0 hFE IC − 0.3 −25°C − 0.1 −16 VBE(sat) IC −30 − 0.3 −12 Collector to emitter voltage VCE (V) VCE(sat) IC −1 −8 Forward current transfer ratio hFE 0 −100 Collector to emitter saturation voltage VCE(sat) (V) −500 −2 mA −200 40 −600 −3 mA −300 80 Ambient temperature Ta (°C) Transition frequency fT (MHz) −9 mA −8 mA −7 mA –6 mA −5 mA −4 mA Collector current IC (mA) IB = −10 mA 160 VCE = −10 V Ta = 25°C −700 Collector current IC (mA) Collector power dissipation PC (mW) Ta = 25°C −600 0 −800 −700 200 0 2 IC IB −800 240 IC = −2 mA Ta = 25°C −100 −80 −60 2SB1219A −40 2SB1219 −20 0 1 3 10 30 100 300 1 000 Base to emitter resistance RBE (kΩ)