VISHAY DG303A_MIL

DG303A_MIL
Vishay Siliconix
CMOS Analog Switches
(Obsolete for non-hermetic. Use DG303B as pin-for-pin replacements.)
FEATURES
BENEFITS
D
D
D
D
D
D
D Full Rail-to-Rail Analog Signal Range D Low Level Switching Circuits
D Low Signal Error
D Programmable Gain Amplifiers
D Low Power Dissipation
D Portable and Battery Powered
Systems
Analog Signal Range: "15 V
Fast Switching—tON: 150 ns
Low On-Resistance—rDS(on): 30 Single Supply Operation
Latch-up Proof
CMOS Compatible
APPLICATIONS
DESCRIPTION
The DG303A_MIL is a monolithic CMOS switch in a DPST
configuration for precision applications in communications,
instrumentation and process control, where low leakage
switching combined with low power consumption are required.
Designed on the Vishay Siliconix PLUS-40 CMOS process,
these switches are latch-up proof, and are designed to block
up to 30 V peak-to-peak when off. An epitaxial layer prevents
latchup.
In the on condition the switches conduct equally well in both
directions (with no offset voltage) and minimize error
conditions with their low on-resistance.
Featuring low power consumption (3.5 mW typ) these
switches are ideal for battery powered applications, without
sacrificing switching speed. Designed for break-before-make
switching action, these devices are CMOS and quasi TTL
compatible. Single supply operation is allowed by connecting
the V– rail to 0 V.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG303A
CerDIP and Sidebraze
TRUTH TABLE
NC
1
14
V+
S3
2
13
S4
D3
3
12
D4
D1
4
11
D2
S1
5
10
S2
IN1
6
9
IN2
GND
7
8
V–
Logic
SW1, SW2
0
OFF
ON
1
ON
OFF
Logic “0” v 0.8 V
Logic “1” w 4 V
ORDERING INFORMATION
Temp Range
Package
Top View
Part Number
DG303AAK
–55 to 125_C
_
14-Pin CerDIP
DG303AAK/883
JM38510/11604BCA
14-Pin Sidebraze
Document Number: 71400
S-02967—Rev. A, 22-Jan-01
SW3, SW4
JM38510/11604BCC
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DG303A_MIL
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V–
Storage Temperature
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
Power Dissipationb
14-Pin CerDIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 825 mW
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputsa, VS, VD . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2V or
30 mA, whichever occurs first
(A Suffix) . . . . . . . . . . . . . . . . . . . . –65 to 150_C
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. Derate 6.5 mW/_C above 25_C
c. Derate 11 mW/_C above 75_C
Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Continuous Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S
V–
VIN
Level
Shift/
Drive
V+
GND
D
V–
FIGURE 1.
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Document Number: 71400
S-02967—Rev. A, 22-Jan-01
DG303A_MIL
Vishay Siliconix
SPECIFICATIONSa
Limits
Test Conditions Unless Specified
Parameter
Symbol
V+ = 15 V, V– = –15 V
VIN = 0.8 V or VIN = 4 Vf
–55 to 125_C
Tempb Mind
Typc
Maxd
Unit
Analog Switch
Analog Signal Rangee
VANALOG
Full
Drain-Source On-Resistance
rDS(on)
Room
Full
Source Off Leakage Current
IS(off)
VD = "10 V, IS = –10 mA
Drain On Leakage Current
15
V
30
50
75
Room
Hot
–1
–100
"0.1
1
100
ID(off)
Room
Hot
–1
–100
"0.1
1
100
ID(on)
VD = VS = "14 V
Room
Hot
–1
–100
"0.1
1
100
VIN = 5 V
Room
Full
–1
–1
–0.001
VIN = 15 V
Room
Full
VIN = 0 V
Room
Full
VS = "14
" V, VD = #14
# V
Drain Off Leakage Current
–15
nA
Digital Control
Input Current with
Input Voltage High
IINH
Input Current with
Input Voltage Low
IINL
0.001
–1
–1
1
1
A
–0.001
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make Time
Charge Injection
Source-Off Capacitance
Room
150
300
Room
130
250
50
tOPEN
Figure 3
Room
Q
CL = 1 nF, Rgen = 0 , Vgen = 0 V, Figure 4
Room
8
Room
14
Room
14
Room
40
VIN = 0 V
Room
6
VIN = 15 V
Room
7
Room
62
Room
74
Room
Full
0.23
CS(off)
Drain-Off Capacitance
CD(off)
Channel-On Capacitance
CD(on)
Input Capacitance
See Figure 2
Cin
Off-Isolation
OIRR
Crosstalk (Channel-to-Channel)
XTALK
VS, VD = 0 V, f = 1 MHz
f = 1 MHz
VIN = 0 V, RL = 1 k
VS = 1 Vrms, f = 500 kHz
ns
pC
pF
dB
Power Supplies
Positive Supply Current
I+
Negative Supply Current
I–
Positive Supply Current
I+
VIN = 4 V (One Input)
All Others = 0 V
I–
–10
–100
Room
Full
VIN = 0.8 V (All Inputs)
Negative Supply Current
Room
Full
Room
Full
mA
10
100
A
–0.001
0.001
–10
–100
0.5
1
–0.001
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
Document Number: 71400
S-02967—Rev. A, 22-Jan-01
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DG303A_MIL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Power Supply
rDS(on) vs. VD and Temperature
60
70
)
"5 V
"8 V
50
"10 V
"12 V
30
"15 V
"20 V
10
r DS(on)– Drain-Source On-Resistance (
r DS(on)– Drain-Source On-Resistance ( )
TA = 25_C
–25
–15
–5
5
15
50
40
TA = 125_C
30
TA = 25_C
20
TA = –55_C
–15
–10
–5
0
5
10
15
VD – Drain Voltage (V)
VD – Drain Voltage (V)
rDS(on) vs. VD and Power Supply Voltage
Switching Time and Break-Before-Make Time
vs. Positive Supply Voltage
500
V– = 0 V
TA = 25_C
100
7.5 V
V– = –15 V
TA = 25_C
VINH = 4 V
VINL = 0 V
400
80
10 V
60
300
tOFF
200
tON
15 V
40
20 V
tOPEN
100
DG301/303 Only
20
0
0
5
10
15
20
0
40
5
10
VD – Drain Voltage (V)
V+ – Positive Supply (V)
Charge Injection vs. Analog Voltage
Input Switching Threshold
vs. Positive Supply Voltage
15
5
50
V– = –15 V
TA = 25_C
V+ = 15 V
V– = –15 V
CL = 1 nF
4
30
Q (pC)
V T (V)
3
20
2
10
1
0
–15
–10
–5
0
5
VS – Source Voltage (V)
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4
V+ = 15 V
V– = –15 V
10
25
t ON, t OFF (ns)
r DS(on)– Drain-Source On-Resistance ( )
90
10
15
0
5
10
15
V+ – Positive Supply (V)
Document Number: 71400
S-02967—Rev. A, 22-Jan-01
DG303A_MIL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Supply Current vs. Temperature
Off Isolation and Crosstalk vs. Frequency
–120
500
400
–100
Crosstalk
I+
–80
(dB)
I+, I– ( A)
300
V+ = 15 V
V– = –15 V
200
VIN = 4 V
100
(One Input)
(All Other = 0 V)
Off Isolation
–60
I–
–40
0
–100
–55
–35
–15
5
25
45
65
85
105
V+ = +15 V
V– = –15 V
RL= 50 –20
10 k
125
100 k
Temperature (_C)
1M
10 M
f – Frequency (Hz)
Supply Curents vs. Switching Frequency
Leakage vs. Temperature
100 nA
15
V+ = 15 V
V– = –15 V
10 nA
V+ = 15 V
V– = –15 V
VS, VD = "14 V
I S, I D
I+, I– (mA)
10
ID(on)
1 nA
5
100 pA
+I
ID(off) or IS(off)
–I
10 pA
–55 –35
0
1k
10 k
100 k
1M
–15
f – Frequency (Hz)
350
350
300
300
250
250
tON
tOFF
50
50
"14
"16
"18
Supply Voltage (V)
Document Number: 71400
S-02967—Rev. A, 22-Jan-01
85
105
125
"20
105
125
V+ = 15 V
V– = –15 V
VS = 3 V
tON
150
100
"12
65
200
100
0
"10
45
Switching Time vs. Temperature
400
Time (ns)
Time (ns)
Switching Time vs. Power Supply Voltage
150
25
Temperature (_C)
400
200
5
"22
0
–55
tOFF
–35
–15
5
25
45
65
85
Temperature (_C)
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DG303A_MIL
Vishay Siliconix
TEST CIRCUITS
+15 V
Logic “1” = Switch On
V+
VS = 3 V
Logic
Input
D
S
VO
50%
0V
IN
5V
RL
300 V–
GND
VS
CL
33 pF
Switch
Output
90%
10%
0V
–15 V
tON
CL (includes fixture and stray capacitance)
VO = VS
tOFF
RL
RL + rDS(on)
FIGURE 2. Switching Time
+15 V
V+
VS1 = 3 V
VS2 = 3 V
Logic “1” = Switch On
Logic
Input
S1
D1
S2
D2
VO1
VO2
IN
GND
Switch
Output
RL1
300 V–
RL2
300 CL1
33 pF
CL2
33 pF
VINH
50%
0V
VS1
VO1
50%
0V
VS2
Switch
Output 0 V
VO2
50%
tBBM
–15 V
CL (includes fixture and stray capacitance)
FIGURE 3. Break-Before-Make SPDT
+15 V
Rg
V+
S
IN
Vg
VO
CL
1 nF
3V
GND
VO
D
VO
INX
ON
V–
OFF
ON
–15 V
FIGURE 4. Charge Injection
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Document Number: 71400
S-02967—Rev. A, 22-Jan-01
DG303A_MIL
Vishay Siliconix
APPLICATION HINTSa
GND
Voltage
(V)
VIN
Logic Input
Voltage
VINH(min)/VINL(max)
(V)
VS or VD
Analog Voltage
Range
(V)
–15
0
4/0.8
–15 to 15
–20
0
4/0.8
–20 to 20
0
0
4/0.8
0 to 15
V+
Positive Supply
Voltage
(V)
V–
Negative Supply
Voltage
(V)
15
20
15
Note:
a. Application Hints are for DESIGN AID ONLY, not guaranteed and not subject to production testing.
Document Number: 71400
S-02967—Rev. A, 22-Jan-01
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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