Power Transistors 2SD2157, 2SD2157A Silicon NPN triple diffusion planar type Darlington Unit: mm ■ Absolute Maximum Ratings Parameter Symbol Collector to 2SD2157 base voltage 2SD2157A Collector to 2SD2157 emitter voltage 2SD2157A Ratings 60 VCBO V 80 5 V Peak collector current ICP 8 A Collector current IC 4 A Ta=25°C Junction temperature Tj Storage temperature Tstg 25 150 ˚C –55 to +150 ˚C 2SD2157 2SD2157A Collector cutoff 2SD2157 current 2SD2157A Emitter cutoff current ICBO ICEO IEBO Collector to emitter 2SD2157 voltage 2SD2157A Forward current transfer ratio Conditions 4.2±0.2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) C B min 200 200 VCE = 30V, IB = 0 500 VCE = 40V, IB = 0 500 VEB = 5V, IC = 0 2 60 IC = 30mA, IB = 0 hFE1 VCE = 3V, IC = 0.5A 1000 VCE = 3V, IC = 3A 2000 hFE2 max VCB = 80V, IE = 0 VCEO * typ VCB = 60V, IE = 0 IC = 5A, IB = 20mA 4 2.5 VBE VCE = 3V, IC = 3A Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf IC = 3A, IB1 = 12mA, IB2 = –12mA, VCC = 50V µA µA mA 10000 2 Base to emitter voltage Unit V 80 IC = 3A, IB = 12mA VCE(sat) FE2 2 Internal Connection Collector to emitter saturation voltage *h 7.5±0.2 5.08±0.5 E Symbol current 1.3±0.2 0.5 +0.2 –0.1 (TC=25˚C) Parameter Collector cutoff 0.8±0.1 W 2 ■ Electrical Characteristics 1.4±0.1 1 VEBO dissipation φ3.1±0.1 V 80 PC 2.7±0.2 2.54±0.25 60 VCEO Unit Emitter to base voltage Collector power TC=25°C 16.7±0.3 (TC=25˚C) 5.5±0.2 4.0 ● High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 4.2±0.2 Solder Dip ■ Features ● 10.0±0.2 0.7±0.1 For power amplification V V 20 MHz 0.5 µs 4 µs 1 µs Rank classification Rank hFE2 Q P 2000 to 5000 4000 to 10000 1 Power Transistors 2SD2157, 2SD2157A PC — Ta IC — VCE IC — VBE 10 10 TC=25˚C 30 (1) 20 10 (2) VCE=3V IB=4.0mA 8 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 6 Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink Collector current IC (A) Collector power dissipation PC (W) 40 1.0mA 0.5mA 4 2 8 25˚C 6 TC=100˚C –25˚C 4 2 (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 6 8 TC=100˚C 1 –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 3.2 IE=0 f=1MHz TC=25˚C 3000 TC=100˚C 104 1000 25˚C –25˚C 103 102 10 0.01 0.03 10 Collector output capacitance Cob (pF) Forward current transfer ratio hFE 25˚C 2.4 Cob — VCB VCE=3V 10 1.6 10000 IC/IB=250 30 3 0.8 Base to emitter voltage VBE (V) hFE — IC 0.1 0.3 1 3 Area of safe operation (ASO) 300 100 30 10 3 1 0.1 10 Collector current IC (A) 100 0.3 1 3 10 30 Rth(t) — t IC 10ms t=1ms 3 DC 1 2SD2157 0.1 0.03 2SD2157A 0.3 0.01 1 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 ICP 10 Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C 3 10 30 100 300 Collector to emitter voltage VCE 1000 (V) 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 100 Collector to base voltage VCB (V) 10000 30 Collector current IC (A) 0 105 100 Collector current IC (A) 2 10 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 4 1 Time t (s) 10 102 103 104