Power Transistors 2SC4152 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ● ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 1400 V VCER 1400 V VCEO 700 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1.0 A Collector current IC 0.3 A Collector to emitter voltage Collector power TC=25°C dissipation Ta=25°C 20 PC Junction temperature Tj Storage temperature Tstg 4.2±0.2 7.5±0.2 φ3.1±0.1 1.4±0.1 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2 ■ Electrical Characteristics 16.7±0.3 ● 2.7±0.2 4.0 ● High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 4.2±0.2 5.5±0.2 Solder Dip ● 10.0±0.2 0.7±0.1 ■ Features 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min typ max Unit 10 µA 10 µA Collector cutoff current ICBO VCB = 1100V, IE = 0 Emitter cutoff current IEBO VEB = 4V, IC = 0 VCER IC = 1mA, RBE = 100Ω 1400 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 700 V Emitter to base voltage VEBO IE = 1mA, IC = 0 5 V 10 Forward current transfer ratio hFE VCE = 5V, IC = 30mA Collector to emitter saturation voltage VCE(sat) IC = 60mA, IB = 6mA Base to emitter saturation voltage VBE(sat) IC = 60mA, IB = 6mA Transition frequency fT VCE = 10V, IC = 30mA, f = 1MHz 12 Collector output capacitance Cob VCB = 100V, IE = 0, f = 1MHz 6 Turn-on time ton Storage time tstg Fall time tf IC = 0.15A, IB1 = 15mA, IB2 = –30mA, VCC = 250V 40 2 2 V V MHz pF 2 µs 3 µs 1 µs 1 Power Transistors 2SC4152 PC — Ta IC — VCE 30 TC=25˚C (2) 10 IB=5mA 100 (1) 20 4mA 3mA 80 2mA 60 40 1mA 20 (3) (4) 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 Forward current transfer ratio hFE 3 TC=–25˚C 100˚C 25˚C 0.1 0.3 100 TC=100˚C 25˚C 30 –25˚C 10 3 0.1 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.001 0.003 30 10 3 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=250V TC=25˚C 300 100 30 10 3 100 Collector to base voltage VCB (V) 0.01 0.03 0.1 0.3 1 10 3 tstg ton 1 0.3 Non repetitive pulse TC=25˚C 3 tf 0.1 1 t=1ms 0.3 10ms 0.1 DC 0.03 0.01 0.003 0.001 0.01 30 1 Area of safe operation (ASO) 0.03 1 0.3 10 30 Switching time ton,tstg,tf (µs) 100 0.1 Collector current IC (A) ton, tstg, tf — IC IE=0 f=1MHz TC=25˚C 0.01 0.03 VCE=10V f=1MHz TC=25˚C 1 0.001 0.003 1 100 10 TC=100˚C 0.3 Collector current IC (A) Cob — VCB 3 1 fT — IC 300 1 0.001 0.003 0.01 0.03 1 1000 1 3 1000 VCE=5V Collector current IC (A) 300 10 Collector current IC (A) Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 10 0.01 0.03 12 IC/IB=10 30 hFE — IC 30 0.1 0.001 0.003 10 1000 IC/IB=10 0.3 8 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 1 6 Transition frequency fT (MHz) 0 Collector output capacitance Cob (pF) Collector to emitter saturation voltage VCE(sat) (V) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 2 VCE(sat) — IC 120 Collector current IC (A) Collector power dissipation PC (W) 40 0 0.2 0.4 0.6 Collector current IC (A) 0.8 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SC4152 Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit 1.6 Lcoil=200µH IC/IB=10 (IB1=–IB2) TC=25˚C Collector current IC (A) 1.4 L coil 1.2 IB1 T.U.T IC ICP 1.0 –IB2 Vin 0.8 VCC 0.6 0.4 Vclamp tW IC 0.2 <1mA 0 0 200 400 600 800 1000 1200 1400 1600 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3