Transistor 2SC1215 Silicon NPN epitaxial planer type For high-frequency (VHF band) amplification and oscillation Unit: mm ■ Features (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 50 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Parameter +0.2 +0.2 0.45 –0.1 0.45 –0.1 1.27 1.27 2.3±0.2 ■ Absolute Maximum Ratings 13.5±0.5 High transition frequency fT. ● 4.0±0.2 5.1±0.2 5.0±0.2 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Symbol Conditions min typ max Unit Collector to base voltage VCBO IC =100µA, IE = 0 30 V Emitter to base voltage VEBO IE = 10µA, IC = 0 3 V Forward current transfer ratio hFE VCB = 10V, IE = –2mA 25 Base to emitter voltage VBE VCB = 10V, IE = –2mA 0.72 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA 0.1 Common emitter reverse transfer capacitance Cre VCE = 10V, IC = 1mA, f = 10.7MHz Transition frequency fT* VCB = 10V, IE = –15mA, f = 100MHz Power gain PG VCB = 10V, IE = –1mA, f = 100MHz Base time constant rbb' · CC VCB = 10V, IE = –10mA, f = 450kHz *f T 600 V V 1 1.5 pF 1200 1600 MHz 20 dB 25 ps Rank classification Rank T S fT(MHz) 600 ~ 1300 900 ~ 1600 1 2SC1215 Transistor PC — Ta IC — VCE IC — I B 24 24 Ta=25˚C 450 VCE=10V Ta=25˚C IB=300µA 350 300 250 200 150 100 20 Collector current IC (mA) 20 400 Collector current IC (mA) 250µA 16 200µA 12 150µA 8 100µA 4 0 20 40 60 80 100 120 140 160 6 12 18 Collector to emitter saturation voltage VCE(sat) (V) VCE=10V 25˚C 350 Collector current IC (mA) 50 300 250 200 150 100 Ta=75˚C –25˚C 40 30 20 10 50 0 0 1.2 1.8 0 Base to emitter voltage VBE (V) 0.4 0.8 1.2 1.6 2.0 Ta=25˚C Transition frequency fT (MHz) 1400 VCE=10V 1200 160 6V 1000 Ta=75˚C 25˚C –25˚C 80 40 800 600 400 200 0 0.1 0.3 1 3 10 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.1 0.3 30 Collector current IC (mA) 100 0 – 0.1 – 0.3 –1 –3 1 3 10 30 100 Collector current IC (mA) Cre — VCE VCE=10V 200 450 IC/IB=10 fT — I E 1600 120 100 Base to emitter voltage VBE (V) hFE — IC 240 300 VCE(sat) — IC 60 VCE=10V Ta=25˚C 0.6 150 Base current IB (µA) IC — VBE 400 0 0 Collector to emitter voltage VCE (V) IB — VBE Base current IB (µA) 8 0 0 Ambient temperature Ta (˚C) Forward current transfer ratio hFE 12 4 50µA 0 0 2 16 50 –10 –30 Emitter current IE (mA) –100 Common emitter reverse transfer capacitance Cre (pF) Collector power dissipation PC (mW) 500 2.4 IC=1mA f=10.7MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 2SC1215 Transistor Zrb — IE PG — IE 12 f=100MHz Rg=50Ω Ta=25˚C 35 100 30 80 60 40 VCE=10V 25 6V 20 15 10 VCE=6V 20 –1 –3 0 – 0.1 – 0.3 –10 –1 –3 –10 –30 0 – 0.1 – 0.3 –100 300 – 0.4 f=900MHz –5mA 600 500 300 200 –40 –50 –60 10 500 – 0.8 IE=–2mA 20 30 40 50 Input conductance gib (mS) 600 –1.2 f=900MHz –2mA –1.6 IE=–5mA –2.0 –2.4 –1.0 –10 –30 –100 48 200 yrb=grb+jbrb VCB=10V – 0.8 – 0.6 – 0.4 – 0.2 0 Reverse transfer conductance grb (mS) Forward transfer susceptance bfb (mS) Reverse transfer susceptance brb (mS) –10 –3 bfb — gfb 0 yrb=grb+jbrb VCB=10V –1 Emitter current IE (mA) brb — grb 0 0 4 Emitter current IE (mA) bib — gib –30 6 2 Emitter current IE (mA) –20 8 5 10V – 0.3 VCE=10V f=100MHz Rg=50kΩ Ta=25˚C 10 Noise figure NF (dB) f=2MHz Ta=25˚C 0 – 0.1 Input susceptance bib (mS) NF — IE 40 Power gain PG (dB) Reverse transfer impedance Zrb (Ω) 120 yfb=gfb+jbfb VCB=10V 40 f=200MHz IE=–5mA 32 300 –2mA 500 24 600 16 900 8 0 –60 –40 –20 0 20 40 Forward transfer conductance gfb (mS) bob — gob 12 Output susceptance bob (mS) yob=gob+jbob VCE=10V 900 10 600 8 IE=–2mA –5mA 500 6 4 300 2 f=200MHz 0 0 0.4 0.8 1.2 1.6 2.0 Output conductance gob (mS) 3