Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1022 Unit: mm +0.2 2.8 –0.3 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 +0.2 ● 2.9 –0.05 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.9±0.2 ● +0.25 0.65±0.15 0.4 –0.05 ■ Features Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage CEBO 5 V Collector current IC 30 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.1 0.1 to 0.3 0.4±0.2 1:Base 2:Emitter 3:Collector 0 to 0.1 Parameter 0.16 –0.06 (Ta=25˚C) 0.8 1.1 –0.1 ■ Absolute Maximum Ratings +0.2 2 JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : V (Ta=25˚C) Parameter Symbol Conditions min typ max Unit 0.1 µA Collector cutoff current ICBO VCB = 10V, IE = 0 Forward current transfer ratio hFE* VCB = 10V, IE = –1mA 70 Transition frequency fT VCB = 10V, IE = –1mA, f = 200MHz 150 Noise figure NF VCB = 10V, IE = –1mA, f = 5MHz 2.8 4 dB Reverse transfer impedance Zrb VCB = 10V, IE = –1mA, f = 2MHz 22 50 Ω Common emitter reverse transfer capacitance Cre VCE = 10V, IC = 1mA, f = 10.7MHz 0.9 1.5 pF *h FE 220 250 MHz Rank classification Rank B C hFE 70 ~ 140 110 ~ 220 Marking Symbol VB VC 1 Transistor 2SC2295 PC — Ta IC — VCE IC — I B 12 15.0 Ta=25˚C 225 150 125 100 75 50 80µA 8 60µA 6 4 40µA 2 20µA 20 40 60 80 100 120 140 5.0 0 0 Ambient temperature Ta (˚C) 6 12 18 Collector to emitter saturation voltage VCE(sat) (V) 60 VCE=10V 50 Collector current IC (mA) 100 80 60 40 20 25˚C 40 Ta=75˚C –25˚C 30 20 10 0 0 0.4 0.6 0.8 1.0 0 Base to emitter voltage VBE (V) 0.4 0.8 hFE — IC 1.2 1.6 2.0 25˚C 120 –25˚C 80 40 VCB=10V f=100MHz Ta=25˚C 300 250 200 150 100 50 0 0.1 0.3 1 3 10 10 3 1 Ta=75˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.1 0.3 30 Collector current IC (mA) 100 1 3 0 – 0.1 – 0.3 –1 –3 10 30 100 Zrb — IE –10 –30 Emitter current IE (mA) –100 Reverse transfer impedance Zrb (Ω) Transition frequency fT (MHz) Ta=75˚C 160 IC/IB=10 60 350 100 30 fT — I E VCE=10V 80 Collector current IC (mA) 400 200 60 100 Base to emitter voltage VBE (V) 240 40 VCE(sat) — IC VCE=10V Ta=25˚C 0.2 20 Base current IB (µA) IC — VBE 120 0 0 Collector to emitter voltage VCE (V) IB — VBE Base current IB (µA) 7.5 2.5 0 0 Forward current transfer ratio hFE 10.0 25 0 2 12.5 Collector current IC (mA) 175 VCE=10V Ta=25˚C IB=100µA 10 200 Collector current IC (mA) Collector power dissipation PC (mW) 250 VCB=10V f=2MHz Ta=25˚C 50 40 30 20 10 0 – 0.1 – 0.3 –1 –3 Emitter current IE (mA) –10 Transistor 2SC2295 NF — IE VCB=6V f=100MHz Rg=50Ω Ta=25˚C 10 2.0 IC=3mA 1mA 1.0 8 6 4 0.5 0.3 1 3 10 30 0 – 0.1 100 Collector to emitter voltage VCE (V) Forward transfer susceptance bfe (mS) Reverse transfer susceptance bre (mS) IE=–1mA 58 – 0.3 – 0.4 100 – 0.5 – 0.6 – 0.5 –1 0 – 0.1 – 0.2 –3 – 0.2 – 0.1 0 Reverse transfer conductance gre (mS) 58 8 4 f=10.7MHz 0 8 f=10.7MHz 58 – 0.1mA 16 24 1.2 10.7 yoe=goe+jboe VCE=10V –20 58 100 –40 IE=–4mA –60 58 100 40 boe — goe –1mA 100 –2mA 32 Input conductance gie (mS) –80 1.0 IE=–1mA 100 0.8 0.6 58 0.4 0.2 yfe=gfe+jbfe VCE=10V –120 – 0.3 12 –10 –100 – 0.4 –2mA bfe — gfe f=10.7MHz yre=gre+jbre VCE=10V 100 16 Emitter current IE (mA) bre — gre 0 –7mA –4mA 0 – 0.3 Output susceptance boe (mS) 0 0.1 2 20 IE=–1mA 2.5 Vie=gie+jbie VCE=10V Input susceptance bie (mS) f=10.7MHz Ta=25˚C 1.5 bie — gie 24 12 Noise figure NF (dB) Common emitter reverse transfer capacitance Cre (pF) Cre — VCE 3.0 f=10.7MHz 0 0 20 40 60 80 Forward transfer conductance 100 gfe (mS) 0 0.1 0.2 0.3 0.4 0.5 Output conductance goe (mS) 3