Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1323 Unit: mm 3.0±0.2 4.0±0.2 ■ Features ■ Absolute Maximum Ratings marking (Ta=25˚C) 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 2 3 2.0±0.2 ● 15.6±0.5 ● Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. 0.7±0.1 ● +0.2 0.45–0.1 ● 1.27 1.27 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 30 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V Forward current transfer ratio hFE * VCE = 10V, IC = 1mA 70 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA Base to emitter voltage VBE VCE = 10V, IC = 1mA Transition frequency fT VCB = 10V, IE = –1mA, f = 200MHz Noise figure NF VCB = 10V, IE = –1mA, f = 5MHz 4.0 dB Common emitter reverse transfer capacitance Cre VCE = 10V, IC = 1mA, f = 10.7MHz 1.5 pF Reverse transfer impedance Zrb VCB = 10V, IE = –1mA, f = 2MHz 50 Ω *h FE 220 0.1 150 V 0.7 V 300 MHz 2.8 Rank classification Rank B C hFE 70 ~ 140 110 ~ 220 1 2SC3314 Transistor PC — Ta IC — VCE 60 300 200 100 50 160 IB=100µA 120 80µA 80 60µA 40µA 40 25˚C 40 Ta=75˚C –25˚C 30 20 10 20µA 0 60 80 100 120 140 160 0 0 2 10 3 1 Ta=75˚C 25˚C 0.1 –25˚C 0.03 3 10 30 10 – 0.3 –1 –3 Emitter current IE (mA) –10 Common emitter reverse transfer capacitance Cre (pF) 20 1.6 2.0 25˚C 120 –25˚C 80 40 600 500 VCE=10V 400 6V 300 200 100 0.3 1 3 10 30 0 – 0.1 – 0.3 100 24 f=10.7MHz Ta=25˚C 2.5 20 2.0 1mA IC=3mA 1.0 0.5 0 0.1 –3 –10 –30 –100 PG — IE 3.0 1.5 –1 Emitter current IE (mA) Cre — VCE 30 1.2 700 Collector current IC (mA) VCB=10V f=2MHz Ta=25˚C 0.8 Ta=25˚C Ta=75˚C 160 0 0.1 100 40 0 – 0.1 0.4 Base to emitter voltage VBE (V) 800 Zrb — IE 50 0 fT — I E 200 Collector current IC (mA) 60 12 VCE=10V Forward current transfer ratio hFE 30 1 10 240 IC/IB=10 0.3 8 hFE — IC 100 0.01 0.1 6 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.3 4 Transition frequency fT (MHz) 40 Power gain PG (dB) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 200 400 0 Reverse transfer impedance Zrb (Ω) VCE=10V Ta=25˚C 0 2 IC — VBE 240 Collector current IC (mA) Collector power dissipation PC (mW) 500 VCE=10V f=100MHz Ta=25˚C 16 12 8 4 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) –100 2SC3314 Transistor NF — IE Cob — VCB 12 5 Noise figure NF (dB) 10 Collector output capacitance Cob (pF) VCB=6V f=100MHz Rg=50Ω Ta=25˚C 8 6 4 2 0 – 0.1 IE=0 f=1MHz Ta=25˚C 4 3 2 1 0 – 0.3 –1 –3 Emitter current IE (mA) –10 1 3 10 30 100 Collector to base voltage VCB (V) 3