Transistor 2SC3354 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 3.0±0.2 4.0±0.2 ■ Features (Ta=25˚C) marking Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 50 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Parameter 1 2 3 2.0±0.2 ■ Absolute Maximum Ratings 15.6±0.5 ● Optimum for high-density mounting. Allowing supply with the radial taping. High transition frequency fT. 0.7±0.1 ● +0.2 0.45–0.1 ● 1.27 1.27 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 100µA, IE = 0 30 V Emitter to base voltage VEBO IE = 10µA, IC = 0 3 V Forward current transfer ratio hFE VCB = 10V, IE = –2mA 25 Base to emitter voltage VBE VCB = 10V, IE = –2mA 720 Common base reverse transfer capacitance Crb VCE = 6V, IC = 0, f = 1MHz 0.8 Common emitter reverse transfer capacitance Cre VCE = 10V, IC = 1mA, f = 10.7MHz Transition frequency fT* VCB = 10V, IE = –15mA, f = 200MHz Power gain PG VCB = 10V, IE = –1mA, f = 100MHz *h FE 600 250 mV pF 1 1.5 pF 1200 1600 MHz 17 dB Rank classification Rank T S fT(MHz) 600 ~ 1300 900 ~ 1600 1 2SC3354 Transistor PC — Ta IC — VCE 60 Ta=25˚C 200 100 50 40 IB=300µA 30 250µA 200µA 20 150µA 100µA 10 –25˚C 40 30 20 10 0 60 80 100 120 140 160 0 0 2 10 3 1 Ta=75˚C 25˚C 0.1 –25˚C 0.03 3 12 10 30 1000 Ta=75˚C 120 25˚C –25˚C 80 40 0 30 100 Collector to base voltage VCB (V) Reverse transfer impedance Zrb (Ω) 1 10 6V 800 600 400 200 0.3 1 3 10 30 0 – 0.1 – 0.3 100 100 80 60 40 VCE=6V 10V 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Cre — VCE f=2MHz Ta=25˚C 20 –1 Emitter current IE (mA) Zrb — IE 2 2.0 VCB=10V 1200 120 3 1.6 f=100MHz Ta=25˚C 160 Cob — VCB 4 1.2 1600 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 0.8 fT — I E 200 0 0.1 100 5 3 0.4 Base to emitter voltage VBE (V) 1400 Collector current IC (mA) 1 0 VCE=10V Forward current transfer ratio hFE 30 1 10 240 IC/IB=10 0.3 8 hFE — IC 100 0.01 0.1 6 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.3 4 Transition frequency fT (MHz) 40 –3 Emitter current IE (mA) –10 Common emitter reverse transfer capacitance Cre (pF) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) Ta=75˚C 50µA 0 Collector output capacitance Cob (pF) Collector current IC (mA) 300 VCE=10V 25˚C 50 400 0 2 IC — VBE 60 Collector current IC (mA) Collector power dissipation PC (mW) 500 2.4 IC=1mA f=10.7MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 2SC3354 Transistor PG — IE Power gain PG (dB) 25 NF — IE 12 f=100MHz Rg=50Ω Ta=25˚C VCE=10V f=100MHz Rg=50kΩ Ta=25˚C VCE=10V 10 6V Noise figure NF (dB) 30 20 15 10 5 8 6 4 2 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) –100 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Emitter current IE (mA) 3