PANASONIC 2SC3354

Transistor
2SC3354
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
Unit: mm
3.0±0.2
4.0±0.2
■ Features
(Ta=25˚C)
marking
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
3
V
Collector current
IC
50
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
Parameter
1
2
3
2.0±0.2
■ Absolute Maximum Ratings
15.6±0.5
●
Optimum for high-density mounting.
Allowing supply with the radial taping.
High transition frequency fT.
0.7±0.1
●
+0.2
0.45–0.1
●
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
(Ta=25˚C)
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = 100µA, IE = 0
30
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
3
V
Forward current transfer ratio
hFE
VCB = 10V, IE = –2mA
25
Base to emitter voltage
VBE
VCB = 10V, IE = –2mA
720
Common base reverse transfer capacitance
Crb
VCE = 6V, IC = 0, f = 1MHz
0.8
Common emitter reverse transfer capacitance
Cre
VCE = 10V, IC = 1mA, f = 10.7MHz
Transition frequency
fT*
VCB = 10V, IE = –15mA, f = 200MHz
Power gain
PG
VCB = 10V, IE = –1mA, f = 100MHz
*h
FE
600
250
mV
pF
1
1.5
pF
1200
1600
MHz
17
dB
Rank classification
Rank
T
S
fT(MHz)
600 ~ 1300
900 ~ 1600
1
2SC3354
Transistor
PC — Ta
IC — VCE
60
Ta=25˚C
200
100
50
40
IB=300µA
30
250µA
200µA
20
150µA
100µA
10
–25˚C
40
30
20
10
0
60
80 100 120 140 160
0
0
2
10
3
1
Ta=75˚C
25˚C
0.1
–25˚C
0.03
3
12
10
30
1000
Ta=75˚C
120
25˚C
–25˚C
80
40
0
30
100
Collector to base voltage VCB (V)
Reverse transfer impedance Zrb (Ω)
1
10
6V
800
600
400
200
0.3
1
3
10
30
0
– 0.1 – 0.3
100
100
80
60
40
VCE=6V
10V
0
– 0.1
– 0.3
–1
–3
–10
–30
–100
Cre — VCE
f=2MHz
Ta=25˚C
20
–1
Emitter current IE (mA)
Zrb — IE
2
2.0
VCB=10V
1200
120
3
1.6
f=100MHz
Ta=25˚C
160
Cob — VCB
4
1.2
1600
Collector current IC (mA)
IE=0
f=1MHz
Ta=25˚C
0.8
fT — I E
200
0
0.1
100
5
3
0.4
Base to emitter voltage VBE (V)
1400
Collector current IC (mA)
1
0
VCE=10V
Forward current transfer ratio hFE
30
1
10
240
IC/IB=10
0.3
8
hFE — IC
100
0.01
0.1
6
Collector to emitter voltage VCE (V)
VCE(sat) — IC
0.3
4
Transition frequency fT (MHz)
40
–3
Emitter current IE (mA)
–10
Common emitter reverse transfer capacitance Cre (pF)
20
Ambient temperature Ta (˚C)
Collector to emitter saturation voltage VCE(sat) (V)
Ta=75˚C
50µA
0
Collector output capacitance Cob (pF)
Collector current IC (mA)
300
VCE=10V
25˚C
50
400
0
2
IC — VBE
60
Collector current IC (mA)
Collector power dissipation PC (mW)
500
2.4
IC=1mA
f=10.7MHz
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
0.1
0.3
1
3
10
30
100
Collector to emitter voltage VCE (V)
2SC3354
Transistor
PG — IE
Power gain PG (dB)
25
NF — IE
12
f=100MHz
Rg=50Ω
Ta=25˚C
VCE=10V
f=100MHz
Rg=50kΩ
Ta=25˚C
VCE=10V
10
6V
Noise figure NF (dB)
30
20
15
10
5
8
6
4
2
0
– 0.1 – 0.3
–1
–3
–10
–30
Emitter current IE (mA)
–100
0
– 0.1 – 0.3
–1
–3
–10
–30
–100
Emitter current IE (mA)
3