Transistor 2SC2404 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm +0.2 2.8 –0.3 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 +0.2 ● 2.9 –0.05 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.9±0.2 ● +0.25 0.65±0.15 0.4 –0.05 ■ Features Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 15 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.1 0.1 to 0.3 0.4±0.2 1:Base 2:Emitter 3:Collector 0 to 0.1 Parameter 0.16 –0.06 (Ta=25˚C) 0.8 1.1 –0.1 ■ Absolute Maximum Ratings +0.2 2 JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : U (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 30 Emitter to base voltage VEBO IE = 10µA, IC = 0 3 Forward current transfer ratio hFE* VCB = 6V, IE = –1mA 40 Base to emitter voltage VBE VCB = 6V, IE = –1mA Transition frequency fT VCB = 6V, IE = –1mA, f = 100MHz Common emitter reverse transfer capacitance Cre VCE = 6V, IC = 1mA, f = 10.7MHz Power gain PG VCB = 6V, IE = –1mA, f = 100MHz 24 dB Noise figure NF VCB = 6V, IE = –1mA, f = 100MHz 3.3 dB *h FE 450 V V 260 0.72 V 650 MHz 0.8 1 pF Rank classification Rank B C D hFE 40 ~ 110 65 ~ 160 100 ~ 260 Marking Symbol UB UC UD 1 Transistor 2SC2404 PC — Ta IC — VCE 12 Ta=25˚C 175 100 75 50 80µA 8 60µA 6 40µA 4 20µA 2 6 4 2 0 60 80 100 120 140 160 0 0 6 Collector to emitter saturation voltage VCE(sat) (V) VCE=6V 25˚C –25˚C 20 15 10 5 0 0 0.4 0.8 1.2 1.6 2.0 30 10 3 1 0.3 –25˚C 0.03 0.01 0.1 0.3 3 10 30 300 240 Ta=75˚C 180 25˚C –25˚C 120 60 0 0.1 100 Collector current IC (mA) 800 600 400 200 –30 Emitter current IE (mA) –100 Common emitter reverse transfer capacitance Cre (pF) 1000 –10 1 2.4 0.3 3 10 30 100 Cob — VCB 1.6 1.2 0.8 0.4 0 0.1 1 Collector current IC (mA) IC=1mA f=10.7MHz Ta=25˚C 2.0 180 VCE=6V Cre — VCE VCB=6V Ta=25˚C –3 Ta=75˚C 25˚C 0.1 120 360 IC/IB=10 fT — IE 1200 –1 60 Base current IB (µA) hFE — IC 100 Base to emitter voltage VBE (V) 0 – 0.1 – 0.3 0 VCE(sat) — IC 30 Ta=75˚C 18 Collector to emitter voltage VCE (V) IC — VBE 25 12 Forward current transfer ratio hFE 40 1.2 Collector output capacitance Cob (pF) 20 Ambient temperature Ta (˚C) Collector current IC (mA) 8 25 0 Transition frequency fT (MHz) 10 Collector current IC (mA) 125 VCE=6V Ta=25˚C IB=100µA 10 150 0 2 IC — I B 12 Collector current IC (mA) Collector power dissipation PC (mW) 200 IE=0 f=1MHz Ta=25˚C 1.0 0.8 0.6 0.4 0.2 0 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 0 5 10 15 20 25 30 Collector to base voltage VCB (V) Transistor 2SC2404 NF — IE 12 10 Noise figure NF (dB) Power gain PG (dB) 30 VCE=10V 25 f=100MHz Rg=50kΩ Ta=25˚C 6V 20 15 10 8 6 4 VCE=6V, 10V 2 5 150 yie=gie+jbie VCE=10V 18 Input susceptance bie (mS) f=100MHz Rg=50Ω Ta=25˚C 35 bie — gie 20 –4mA –7mA 16 100 –2mA 14 100 12 58 10 –1mA IE=– 0.5mA PG — IE 40 8 6 58 25 4 25 2 f=10.7MHz –3 –10 –30 0 0 – 0.1 – 0.3 –100 Emitter current IE (mA) –1 Forward transfer susceptance bfe (mS) Reverse transfer susceptance bre (mS) 0 10.7 25 yre=gre+jbre VCE=10V –1 –4mA –1mA 58 IE=–7mA –3 100 –5 – 0.3 – 0.2 3 1.2 –1mA 100 –20 150 –2mA –40 150 –4mA 100 58 –60 – 0.1 0 Reverse transfer conductance gre (mS) 9 12 15 boe — goe 10.7 58 – 0.4mA 6 Input conductance gie (mS) f=150MHz IE=–7mA 100 –80 1.0 150 –2mA –4mA 100 0.8 –7mA 0.6 58 0.4 25 0.2 yfe=gfe+jbfe VCE=10V –120 – 0.4 0 –100 –100 f=150MHz –6 – 0.5 –30 bfe — gfe 0 –4 –10 Emitter current IE (mA) bre — gre –2 –3 IE=– 0.5mA –1mA –1 Output susceptance boe (mS) 0 – 0.1 – 0.3 yoe=goe+jboe VCE=10V f=10.7MHz 0 0 20 40 60 80 Forward transfer conductance 100 gfe (mS) 0 0.1 0.2 0.3 0.4 0.5 Output conductance goe (mS) 3