PANASONIC 2SC3930

Transistor
2SC3930
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1532
Unit: mm
2.1±0.1
■ Features
+0.1
0.3–0
0.65
1.3±0.1
0.65
1
3
2
Symbol
Ratings
Unit
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
30
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
+0.1
0 to 0.1
Parameter
0.15–0.05
(Ta=25˚C)
Collector to base voltage
■ Electrical Characteristics
0.425
0.2
■ Absolute Maximum Ratings
1.25±0.1
0.7±0.1
●
2.0±0.2
●
Optimum for RF amplification of FM/AM radios.
High transition frequency fT.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.9±0.1
●
0.425
1:Base
2:Emitter
3:Collector
0.2±0.1
EIAJ:SC–70
S–Mini Type Package
Marking symbol : V
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
0.1
µA
Collector cutoff current
ICBO
VCB = 10V, IE = 0
Forward current transfer ratio
hFE*
VCB = 10V, IE = –1mA
70
Transition frequency
fT
VCB = 10V, IE = –1mA, f = 200MHz
150
Noise figure
NF
VCB = 10V, IE = –1mA, f = 5MHz
Reverse transfer impedance
Zrb
VCB = 10V, IE = –1mA, f = 2MHz
22
50
Ω
Common emitter reverse transfer capacitance
Cre
VCE = 10V, IC = 1mA, f = 10.7MHz
0.9
1.5
pF
*h
FE
220
250
2.8
MHz
4
dB
Rank classification
Rank
B
C
hFE
70 ~ 140
110 ~ 220
Marking Symbol
VB
VC
1
2SC3930
Transistor
PC — Ta
IC — VCE
IC — I B
12
15.0
Ta=25˚C
10
160
120
80
40
0
20
40
60
80µA
8
60µA
6
4
40µA
2
20µA
80 100 120 140 160
6
18
Collector current IC (mA)
80
60
40
20
25˚C
40
Ta=75˚C
–25˚C
30
20
10
0
0
0.8
1.0
0
Base to emitter voltage VBE (V)
0.4
0.8
hFE — IC
1.2
1.6
2.0
–25˚C
80
40
300
250
200
150
100
50
0.3
1
3
10
30
Collector current IC (mA)
100
0
– 0.1 – 0.3
–1
–3
–10
–30
Emitter current IE (mA)
–100
Reverse transfer impedance Zrb (Ω)
Transition frequency fT (MHz)
25˚C
120
0
0.1
10
3
1
0.3
Ta=75˚C
25˚C
0.1
–25˚C
0.03
0.01
0.1
0.3
1
3
10
30
100
Zrb — IE
VCB=10V
f=100MHz
Ta=25˚C
350
100
IC/IB=10
60
VCE=10V
80
30
fT — I E
Ta=75˚C
60
Collector current IC (mA)
400
200
40
100
Base to emitter voltage VBE (V)
240
160
20
Base current IB (µA)
Collector to emitter saturation voltage VCE(sat) (V)
VCE=10V
50
0.6
0
VCE(sat) — IC
60
100
Base current IB (µA)
2.5
12
VCE=10V
Ta=25˚C
0.4
5.0
IC — VBE
120
0.2
7.5
Collector to emitter voltage VCE (V)
IB — VBE
0
10.0
0
0
Ambient temperature Ta (˚C)
Forward current transfer ratio hFE
12.5
0
0
2
VCE=10V
Ta=25˚C
IB=100µA
Collector current IC (mA)
200
Collector current IC (mA)
Collector power dissipation PC (mW)
240
VCB=10V
f=2MHz
Ta=25˚C
50
40
30
20
10
0
– 0.1
– 0.3
–1
–3
Emitter current IE (mA)
–10
Transistor
2SC3930
PG — IE
24
20
2.0
IC=3mA
1mA
1.5
1.0
16
12
8
0.5
6
4
1
3
10
30
2
0
– 0.1 – 0.3
100
–1
–3
–10
–30
Emitter current IE (mA)
bie — gie
20
Reverse transfer susceptance bre (mS)
0
Vie=gie+jbie
VCE=10V
0
f=10.7MHz
yre=gre+jbre
VCE=10V
–7mA
100
–2mA
IE=–1mA
12
IE=–1mA
– 0.2
58
58
– 0.3
8
– 0.4
4
0
0
8
100
– 0.5
f=10.7MHz
16
24
32
40
Input conductance gie (mS)
– 0.6
– 0.5
–1
–3
–10
bfe — gfe
– 0.1
16
– 0.3
Emitter current IE (mA)
bre — gre
24
–4mA
0
– 0.1
–100
Forward transfer susceptance bfe (mS)
0.3
Collector to emitter voltage VCE (V)
Input susceptance bie (mS)
8
4
0
0.1
VCB=6V
f=100MHz
Rg=50Ω
Ta=25˚C
10
Noise figure NF (dB)
2.5
NF — IE
12
VCE=10V
f=100MHz
Ta=25˚C
f=10.7MHz
Ta=25˚C
Power gain PG (dB)
Common emitter reverse transfer capacitance Cre (pF)
Cre — VCE
3.0
f=10.7MHz
58
– 0.1mA
10.7
–1mA 100
–20
58
–2mA
100
–40
IE=–4mA
–60
58
100
–80
–100
yfe=gfe+jbfe
VCE=10V
–120
– 0.4
– 0.3
– 0.2
– 0.1
0
Reverse transfer conductance gre (mS)
0
20
40
60
80
Forward transfer conductance
100
gfe (mS)
boe — goe
1.2
Output susceptance boe (mS)
yoe=goe+jboe
VCE=10V
1.0
IE=–1mA
100
0.8
0.6
58
0.4
0.2
f=10.7MHz
0
0
0.1
0.2
0.3
0.4
0.5
Output conductance goe (mS)
3