2SC3359S Transistors Power Transistor (80V, 0.3A) 2SC3359S zFeatures 1) High breakdown voltage, BVCEO=80V 2) Low saturation voltage, typically VCE(sat) = 0.2V at IB=0.3A / 0.03A zElectrical characteristics (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Symbol VCBO Limits Unit 80 V VCEO 80 V VEBO 5 V IC 0.3 A PC 0.3 W Emitter-base voltage Collector current Collector power dissipation Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 C zAbsolute maximum ratings (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Symbol BVCEO Min. Typ. Max. Unit 80 − − BVCBO 80 − − V V BVEBO 5 − ICBO − − − 0.5 IEBO − 0.2 0.5 A A VCE(sat) − − 0.5 V hFE 120 390 − fT 50 − 150 − MHz Cob − 5 8 pF Emitter-base breakdown voltage Collector outoff current Emitter outoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance V Conditions IC=1mA IC=50µA IE=50µA VCB=80V VEB=4V VC/ICB=0.3V/0.03A VCE=3V, IC=0.1A VCE=5V , IE= −0.01A , f=100MHz VCB=10V , IE=0A , f=1MHz zPackaging specification and hFE Type 2SC3359S Package hFE SPT QR Code TP Basic orderin unit (pieces) 5000 Rev.A 1/2 2SC3359S Transistors zElectrical characteristic curves 100 Ta=25 C 1000 500 A 1000 Ta=25 C Ta=25 C VCE=5V 500 400 A 350 A 300 A 60 250 A 200 A 40 150 A 100 A 20 500 VCE=10V 200 5V 100 3V 1V 50 hFE-DC CURRENT GAIN 80 hFE-DC CURRENT GAIN IC-COLLECTOE CURRENT (mA) 450 A 20 50 A Ta=125 C 25 C 200 -40 C 100 50 20 IB=0 A 1.0 2.0 3.0 4.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 5.0 VCE-COLLECTOR-EMITTER VOLTAGE (V) IC-COLLECTOR CURRENT (mA) Fig.1 Typical output characteristics Fig.2 DC current gain vs. collector current 1.8 VBE(sat) BASE EMITTER SATURATION VOLTAGE (V) VCE(sat) COLLECTOR EMITTER SATURATION VOLTAGE (V) Ta=25 C IC / IB=10 0.3 0.2 Ta=125 C 0.1 25 C -40 C 0 1 2 10 20 5 Ta=25 C IC / IB=10 1.6 1.4 1.2 1.0 Ta=-40 C 0.8 25 C 0.6 125 C 0.4 0.2 0 1 50 100 200 500 1000 IC-COLLECTOR CURRENT (mA) Fig.4 Collector emitter saturation voltage vs. collector current 100 CAPACITANCE (pF) Cib 20 Cob 10 5 2 1 0.5 1 2 5 10 20 50 REVERSE BIAS VOLTAGE (V) Fig.7 Capacitance vs. reverse bias voltage 2 5 10 20 50 100 200 500 1000 50 100 200 500 1000 IC-COLLECTOR CURRENT (mA) Fig.3 DC current gain vs. collector current 1.8 Ta=25 C VCE=5V 1.6 1.4 1.2 1.0 Ta=-40 C 0.8 25 C 0.6 125 C 0.4 0.2 0 1 2 5 10 20 50 100 200 500 1000 IC-COLLECTOR CURRENT (mA) IC-COLLECTOR CURRENT (mA) Fig.5 Base emitter saturation voltage vs. collector current Fig.6 Base emitter 'ON' voltage vs. collector ccurrent 1000 CURRENT GAIN-BANDWIDTH PROFUCT (MHz) Ta=25 C f=1MZ 50 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 500 VBE(ON) BASE EMITTER SATURATION VOLTAGE (V) 0 0 Ta=25 C VCE=5V 500 200 100 50 20 10 1 2 5 10 20 50 100 200 500 1000 IC-COLLECTOR CURRENT (mA) Fig.8 Current gain-bandwidth product vs. collector current Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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