Data Sheet 10V Drive Nch MOSFET R5009FNX Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TO-220FM φ3.2 10.0 4.5 2.5 8.0 15.0 Features 1)Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage VGSS garanteed to be ±30V . 1.2 1.3 0.8 2.54 2.54 2.6 0.75 (1) (2) (3) 5) Drive circuits can be simple. 6) Parallel use is easy. Application Switching Inner circuit Packaging specifications Type Package Basic ordering unit (pieces) R5009FNX ∗1 Bulk 500 (1) Gate (2) Drain (3) Souce (1) Absolute maximum ratings (Ta 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) VDSS VGSS *3 Limits Unit 500 30 9 V V A ID IDP *1 36 A Continuous IS *3 *1 I 9 36 4.5 A A A SP *2 Avalanche Current Avalanche Energy IAS EAS Power dissipation (Tc=25℃) PD 5.4 50 mJ W Channel temperature Range of storage temperature Tch Tstg 150 55 to +150 C C Symbol Rth (ch-c) Limits 2.5 Unit C / W *2 (3) *1 Body Diode Continuous Pulsed Pulsed (2) *1 Pw10s, Duty cycle1% *2 L 500μH, VDD=50V, Rg=25,starting Tch=25C *3 Limited only by maximum temperature allowed. Thermal resistance Parameter Channel to Case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.07 - Rev.A Data Sheet R5009FNX Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol IGSS Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Min. Typ. Max. Unit - - 100 nA VGS=±30V, VDS=0V 500 - - V ID=1mA, VGS=0V Conditions IDSS - - 100 uA VDS=500V, VGS=0V VGS (th) 2.0 - 4.0 V VDS=10V, ID=1mA RDS (on)* - 0.65 0.84 ID=4.5A, VGS=10V l Yfs l* 4.0 5.7 - S ID=4.5A, VDS=10V Input capacitance Ciss - 630 - pF VDS=25V Output capacitance Coss - 400 - pF VGS=0V Reverse transfer capacitance Crss - 25 - pF f=1MHz Turn-on delay time td(on) * - 24 - ns ID=4.5A, VDD tr * - 20 - ns VGS=10V td(off) * - 50 - ns RL=55.6 Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Turn-off delay time 250V tf * - 40 - ns RG=10 Total gate charge Qg * - 18 - nC ID=9.0A, VDD 250V Gate-source charge Gate-drain charge Qgs * Qgd * - 3.5 5.5 - nC nC VGS=10V Fall time *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Reverse Recovery Time Symbol VSD * trr * Min. Typ. Max. Unit 48 78 1.5 108 V ns Conditions Is=9.0A, VGS=0V Is=9.0A, di/dt=100A/s *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.07 - Rev.A Data Sheet R5009FNX Electrical characteristics curves VGS= 10V VGS= 6.5V 10 VGS= 6.0V VGS= 5.5V 5 VGS= 5.0V 7 VGS= 4.5V VGS= 7.0V 6 VGS= 6.5V 5 VGS= 6.0V 4 VGS= 5.0V 2 0.001 1 2 3 4 5 6 7 Fig.1 Typical Output Characteristics( Ⅰ) Fig.2 Typical Output Characteristics( Ⅱ) Fig.3 Typical Transfer Characteristics 0 50 100 150 10 1 0.1 0.1 1 1.5 ID= 9A 1 0.5 ID= 4.5A 0 100 0 ID= 9A ID= 4.5A 0.5 0 150 CHANNEL TEMPERATURE: Tch (℃) Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1.5 100 100 10 Ta= 125°C Ta= 75°C Ta= 25°C 0.1 0.01 0.01 10 15 Fig.6 Static Drain-Source On-State Resistance vs. Gate Source Voltage VDS= 10V Pulsed 1 5 GATE-SOURCE VOLTAGE : VGS (V) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current VGS= 10V Pulsed 100 10 Ta= 25°C Pulsed DRAIN-CURRENT : ID[A] Fig.4 Gate Threshold Voltage vs. Channel Temperature 50 Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C CHANNEL TEMPERATURE: Tch (℃) 0 2 Ta= 25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[Ω] 0.1 -50 0 GATE-SOURCE VOLTAGE : VGS[V] 1 1 0.01 DRAIN-SOURCE VOLTAGE : VDS[V] 10 2 Ta= 25°C 0.1 DRAIN-SOURCE VOLTAGE : VDS[V] VDS= 10V ID=1mA -50 Ta= 125°C Ta= 75°C Ta= 25°C 1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 40 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[Ω] 100 20 10 VGS= 4.5V 0 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[Ω] VGS= 5.5V Ta=25°C Pulsed 3 VDS= 10V Pulsed VGS= 10V 1 0 GATE THRESHOLD VOLTAGE: VGS(th) (V) VGS= 8.0V SOURCE CURRENT : Is [A] DRAIN CURRENT : ID[A] VGS= 7.0V 100 8 Ta=25°C Pulsed DRAIN CURRENT : ID[A] VGS= 8.0V DRAIN CURRENT : ID[A] 15 Ta= 25°C VGS=0V Pulsed 10 1 Ta= 125°C Ta= 75°C Ta= 25°C 0.1 Ta= 25°C 0.01 0.1 1 10 100 0 0.5 1 1.5 DRAIN-CURRENT : ID[A] SOURCE-DRAIN VOLTAGE : VSD [V] Fig.8 Forward Transfer Admittance vs. Drain Current Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 3/5 2011.07 - Rev.A Data Sheet Ta=25°C Pulsed 100 10 td(off) 1000 tf 1 10 td(on) 10 tr 100 0.01 SOURCE-CURRENT : IS[V] 10000 DRAIN CURRENT : ID (A) CAPACITANCE : C [pF] 1000 100 Crss Coss 1 10 8 6 Ta=25°C VDD=250V ID= 9A Pulsed 4 2 10 100 0 5 10 15 20 25 30 TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics Operation in this area is limited by R DS(ON) (VGS=10V) 100 10 PW=100us 1 PW=1ms PW =10ms 0.1 Ta = 25°C Single Pulse 0.01 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 10000 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Maximum Safe Operating Aera Fig.13 Typical Capacitance vs. Drain-Source Voltage NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 12 0 1 Fig.11 Switching Characteristics 1000 Ciss 10 0.1 DRAIN-CURRENT : ID[A] Fig.10 Reverse Recovery Time vs. Source Current Ta=25°C f=1MHz VGS=0V Ta=25°C VDD=250V VGS=10V RG=10Ω Pulsed 100 1 0.1 GATE-SOURCE VOLTAGE : VGS [V] 10000 1000 SWITCHING TIME : t [ns] REVERSE RECOVERY TIME : trr[ns] R5009FNX 10 1 0.1 Ta = 25°C Single Pulse Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 44.7 °C/W 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.07 - Rev.A Data Sheet R5009FNX Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG VGS ID VDS Qg RL VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 2 L IAS V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 5/5 2011.07 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A