ES6U41 Transistors 2.5V Drive Nch+SBD MOSFET ES6U41 zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET / Schottky barrier diode WEMT6 zFeatures 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. (6) (5) (4) (1) (2) (3) Abbreviated symbol : U41 zApplications Switching zPackage specifications Package Type zInner circuit Taping Code T2R Basic ordering unit (pieces) 8000 (6) (4) (5) ES6U41 ∗2 ∗1 (1) ∗1 ESD protection diode ∗2 Body diode (2) (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain (6)Drain zAbsolute maximum ratings (Ta=25°C) <MOSFET> Parameter Drain-source voltage Gate-source voltage Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Limits 30 ±12 Channel temperature Tch 150 °C Power dissipation PD 0.7 W / ELEMENT Limits 25 20 0.5 Unit V V A Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed ∗2 ±1.5 ±6.0 0.75 6.0 Unit V V A A A A ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board <Di> Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation Symbol VRM VR IF IFSM Tj PD ∗1 2.0 A ∗2 150 0.5 °C W / ELEMENT ∗1 60Hz 1cycle ∗2 Mounted on ceramic board 1/5 ES6U41 Transistors <MOSFET and Di> Parameter Symbol PD ∗ Tstg Power dissipation Range of storage temperature Limits Unit 0.8 −55 to +150 W / TOTAL °C Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC ∗ Mounted on a ceramic board zElectrical characteristics (Ta=25°C) <MOSFET> Parameter Symbol Min. Typ. Max. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) − 30 − 0.5 − − − 1.5 − − − − − − − − − − − − − − 170 180 240 − 80 14 12 7 9 15 6 1.6 0.5 0.3 ±10 − 1 1.5 240 250 340 − − − − − − − − 2.2 − − <Body diode characteristics (Source-drain)> Parameter Symbol Min. Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Conditions VGS=±12V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 1.5A, VGS= 4.5V ID= 1.5A, VGS= 4V ID= 1.5A, VGS= 2.5V VDS= 10V, ID= 1.5A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 0.75A VGS= 4.5V RL 20Ω RG= 10Ω VDD 15V, VGS= 4.5V ID= 1.5A, RL 10Ω RG= 10Ω ∗Pulsed Forward voltage Typ. Max. VSD − − 1.2 Unit V Conditions Symbol Min. Typ. Max. Unit − − 0.36 V − − 0.52 V IF= 0.5A − − 100 µA VR= 20V IS= 0.75A, VGS=0V <Di> Parameter Forward voltage VF Reverse current IR Conditions IF= 0.1A 2/5 ES6U41 Transistors zElectrical characteristics curves <MOSFET> 2 1.5 1 VGS= 1.7V VGS= 1.6V 0.5 1.5 VGS= 1.7V 1 VGS= 1.6V 0.5 0 0.2 0.4 0.6 0.8 1 0 2 DRAIN-SOURCE VOLTAGE : VDS[V] 100 VGS= 2.5V VGS= 4.0V VGS= 4.5V 10 1 8 1.0 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.01 0.1 1 VGS= 4.0V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.01 10 0.1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 10 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 100 10 10 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 10 VDS= 10V Pulsed 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 1 DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] VGS= 2.5V Pulsed 2.0 GATE-SOURCE VOLTAGE : VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 1.5 Fig.3 Typical Transfer Characteristics 1000 100 DRAIN-CURRENT : ID[A] 1 0.01 0.001 0.5 10 VGS= 4.5V Pulsed Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 0.1 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 6 1000 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C Fig.2 Typical Output Characteristics(Ⅱ) Ta=25°C Pulsed 0.01 1 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) 0.01 4 REVERSE DRAIN CURRENT : Is [A] 0 VDS= 10V Pulsed VGS= 1.5V 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS= 1.8V Ta=25°C Pulsed 1000 10 Ta=25°C Pulsed VGS= 10V VGS= 2.5V VGS= 2.2V DRAIN CURRENT : ID[A] VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.5V VGS= 2.2V VGS= 1.8V DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] 2 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 3/5 ES6U41 Transistors 1000 800 ID= 1.50A 600 ID= 0.75A 400 200 5 td(off) 100 tf 10 tr td(on) 0 Ta=25°C VDD= 15V VGS= 4.5V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : VGS [V] Ta=25°C Pulsed SWITCHING TIME : t [ns] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 1 0 2 4 6 8 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 0.01 0.1 1 4 3 2 Ta=25°C VDD= 15V ID= 1.5A RG=10Ω Pulsed 1 0 10 0 0.5 1 1.5 DRAIN-CURRENT : ID[A] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics CAPACITANCE : C [pF] 1000 Ciss 100 Crss 10 Coss Ta=25°C f=1MHz VGS=0V 1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage <Di> 100000 1 pulsed REVERSE CURRENT : IF (A) Ta = 75℃ 1000 Ta = 25℃ 100 10 Ta= - 25℃ 1 0.1 0.01 FORWARD CURRENT : IF (A) pulsed 10000 0.1 Ta = 75℃ Ta = 25℃ Ta= - 25℃ 0.01 0.001 0 5 10 15 20 25 REVERSE VOLTAGE : VR[V] Fig.1 Reverse Current vs. Reverse Voltage 2 TOTAL GATE CHARGE : Qg [nC] 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF[V] Fig.2 Forward Current vs. Forward Voltage 4/5 ES6U41 Transistors zMeasurement circuit Pulse Width ID VDS VGS RL 90% 50% 10% VGS 50% VDS D.U.T. 10% VDD RG 90% tr td(on) ton Fig.1-1 Switching Time Measurement Circuit 10% 90% td(off) tf toff Fig.1-2 Switching Waveforms VG ID VDS VGS RL D.U.T. IG(Const.) RG Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit FIg.2-2 Gate Charge Waveform zNotice 1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 5/5 Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. 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More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev3.0