1.5V Drive Pch +SBD MOSFET TT8U2 Dimensions (Unit : mm) Structure Silicon P-channel MOSFET / schottky barrier diode TSST8 Features 1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on-resistance. 3) Low voltage drive(1.5V). 4) Built in Low IR shottky barierr daiode. (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : U02 Applications Switching Packaging specifications Type Package Code Basic ordering unit (pieces) TT8U2 Inner circuit Taping TR 3000 (8) Absolute maximum ratings (Ta = 25C) <MOSFET> Parameter Symbol Limits Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS 10 V Continuous ID 2.4 A Pulsed IDP 9.6 A Continuous IS 0.8 A Pulsed *1 ISP 9.6 A Tch PD*2 150 1.0 C W / ELEMENT Drain current Source current (Body Diode) Channel temperature Power dissipation (1) ANODE (2) ANODE (3) SOURCE (4) GATE (5) DRAIN (6) DRAIN (7) CATHODE (8) CATHODE (7) (6) (5) (3) (4) ∗1 (1) (2) ∗1 BODY DIODE *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. <Di> Parameter Symbol Limits Unit Repetitive peak reverse voltage VRM 30 V Reverse voltage VR 20 V Forward current IF 1.0 A Forward current surge peak IFSM*1 3.0 A Junction temperature Power dissipation Tj PD*2 150 1.0 C W / ELEMENT *1 60Hz / 1Cycle *2 Mounted on a ceramic board <MOSFET and Di> Parameter Total power dissipation Range of Storage temperature Symbol Limits Unit PD* Tstg 1.25 55 to 150 W / TOTAL C * Mounted on a ceramic board www.rohm.com ©2012 ROHM Co., Ltd. All rights reserved. 1/5 2012.02 - Rev.B DataSheet TT8U2 Electrical characteristics (Ta=25C) <MOSFET> Parameter Gate-source leakage Min. Typ. Max. Unit IGSS - - 100 nA VGS=10V, VDS=0V 20 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=20V, VGS=0V VGS (th) 0.3 - 1.0 V VDS=10V, ID=1mA Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage Conditions Symbol - 80 105 m ID=2.4A, VGS=4.5V - 105 140 m ID=1.2A, VGS=2.5V - 150 225 m ID=1.2A, VGS=1.8V - 180 360 m ID=0.5A, VGS=1.5V l Yfs l* 2.4 - - S VDS=10A, ID=2.4V Input capacitance Ciss - 850 - pF VDS=10V Output capacitance Coss - 60 - pF VGS=0V Reverse transfer capacitance Crss - 50 - pF f=1MHz Turn-on delay time td(on)* - 9 - ns VDD 10V,VGS=4.5V tr * - 25 - ns ID=1.2A, td(off)* - 55 - ns RL 8.3 tf * - 45 - ns RG=10 Total gate charge Qg * - 6.7 - nC VDD 10V,VGS=4.5V Gate-source charge Gate-drain charge Qgs * Qgd * - 1.7 0.6 - nC nC ID=2.4A, RL 4.2 ,RG=10 Symbol Min. Typ. Max. Unit VSD - - 1.2 V Symbol Min. Typ. Max. Unit VF IR - 0.48 - 0.52 10 V A Static drain-source on-state resistance Forward transfer admittance Rise time Turn-off delay time Fall time RDS (on)* *Pulsed Body diode(source-drain) (Ta=25°C) <MOSFET> Parameter Forward Voltage Conditions Is=2.4A, VGS=0V *Pulsed <Di> Parameter Forward Voltage drop Reverse leakage www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/5 Conditions IF=1.0A VR=10V 2012.02 - Rev.B DataSheet TT8U2 Electrical characteristic curves (Ta=25°C) <MOSFET> 10 10 VGS= −1.8V 4 2 8 6 VGS= −1.8V 4 VGS= −1.5V 2 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 0.1 0.01 0.001 0 0 0.2 0.4 0.6 0.8 1 0 2 Fig.1 Typical output characteristics(Ⅰ) 6 8 0 10 VGS= −1.5V VGS= −1.8V VGS= −2.5V VGS= −4.5V 100 10 0.1 1 10 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 100 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 10 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 100 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) VGS= −1.8V Pulsed 1 1 10 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 100 10 0.1 1 10 DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 1000 VGS= −1.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 100 0.1 VGS= −2.5V Pulsed 10 10 0.1 2 1000 DRAIN-CURRENT : -ID[A] 1000 1.5 Fig.3 Typical Transfer Characteristics VGS= −4.5V Pulsed 10 1 Fig.2 Typical output characteristics(Ⅱ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=25°C Pulsed 0.5 GATE-SOURCE VOLTAGE : -VGS[V] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 4 DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1 VGS= −1.5V 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VDS= −10V Pulsed DRAIN CURRENT : -ID[A] VGS= −4.5V VGS= −2.5V 6 10 Ta=25°C VGS= −4.5V Pulsed VGS= −2.5V 1 10 DRAIN-CURRENT : -ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) 3/5 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] DRAIN CURRENT : -ID[A] 8 DRAIN CURRENT : -ID[A] Ta=25°C Pulsed 10 VDS= −10V Pulsed Ta=−25°C Ta=25°C Ta=75°C Ta=125°C 1 0.1 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current 2012.02 - Rev.B VGS=0V Pulsed 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 0.01 0 0.5 1 1.5 10000 250 Ta=25°C Pulsed 200 ID= −1.2A 150 ID= −2.4A 100 50 SWITCHING TIME : t [ns] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] REVERSE DRAIN CURRENT : -Is [A] 10 0.001 1000 Ta=25°C VDD= −10V VGS= −4.5V RG=10Ω Pulsed tf td(off) 100 10 td(on) tr 1 0 0 2 SOURCE-DRAIN VOLTAGE : -VSD [V] 4 6 8 10 GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage 0.01 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.12 Switching Characteristics 10000 5 4 CAPACITANCE : C [pF] GATE-SOURCE VOLTAGE : -VGS [V] DataSheet TT8U2 3 2 Ta=25°C VDD= −10V ID= −2.4A RG=10Ω Pulsed 1 2 4 Ciss 1000 Coss 100 Crss 10 0 0 Ta=25°C f=1MHz VGS=0V 6 0.01 8 0.1 1 10 100 GATE-SOURCE VOLTAGE : -VDS[V] TOTAL GATE CHARGE : Qg [nC] Fig.14 Typical Capacitance vs. Drain-Source Voltage Fig.13 Dynamic Input Characteristics <Di> 100000 1 pulsed FORWARD CURRENT : IF[A] REVERSE CURRENT : IR[mA] pulsed 10000 Ta = 125°C 1000 Ta = 75°C 100 10 Ta = 25°C 1 Ta= −25°C 0.1 0.01 0 5 10 15 20 25 30 0.1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.01 0.001 0 100 200 300 400 500 600 REVERSE VOLTAGE : VR [V] FORWARD VOLTAGE : VF[mV] Fig.1 Reverse Current vs. Reverse Voltage Fig.2 Forward Current vs. Forward Voltage www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/5 2012.02 - Rev.B DataSheet TT8U2 Measurement circuits Pulse Width VGS ID VDS VGS 10% 50% RL 50% 10% D.U.T. RG 90% VDD VDS 10% 90% td(on) tr ton 90% td(off) tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG VGS ID VDS RL IG(Const.) RG D.U.T. Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice 1. SBD has a large reverse leak current compared to other type of diode. Therefore ; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 5/5 2012.02 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. R1120A