GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications • Compact and Thin (TSSOP-8) package • Enhancement-mode • Peak collector current: IC = 150 A (max) Unit: mm (@VGE=3.0V(min),Ta=70℃(max))/ Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VCES 400 V DC VGES ±6 Pulse VGES ±8 ICP 150 A (Note 2a) PC (1) 1.1 W (Note 2b) PC (2) 0.6 W Tj 150 °C Tstg −55~150 °C Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation（t＝10 s） Pulse (Note 1) Junction temperature Storage temperature range V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1,2 EMITTER 3 EMITTER (Gate drive connection) 4 GATE 5,6,7,8 COLLECTOR JEDEC ― JEITA ― TOSHIBA － Weight: 0.035 g (typ.) Circuit Configuration 8 7 6 5 Thermal Characteristics Characteristics Symbol Rating Unit Thermal resistance , junction to ambient (t = 10 s) (Note2a) Rth (j-a) (1) 114 °C/W Thermal resistance , junction to ambient (t = 10 s) (Note2b) Rth (j-a) (2) 208 °C/W Marking (Note 3) Note : For (Note 1) , (Note 2a) , (Note 2b) and (Note 3) , Please refer to the Part No. (or abbreviation code) next page. 5 6 7 8 Lot No. 8G136 1 2 3 4 4 3 2 1 A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2007-04-23 GT8G136 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ± 6 V, VCE = 0 ⎯ ⎯ ± 10 μA Collector cut-off current ICES VCE = 400 V, VGE = 0 ⎯ ⎯ 10 μA VGE (OFF) IC = 1 mA, VCE = 5 V 0.65 1.0 1.35 V VCE (sat) IC = 150 A, VGE = 3 V ⎯ 3.5 ⎯ V VCE = 10 V, VGE = 0, f = 1 MHz ⎯ 2500 ⎯ pF ⎯ 1.5 ⎯ ⎯ 1.7 ⎯ ⎯ 1.6 ⎯ ⎯ 1.9 ⎯ Collector-emitter saturation voltage Input capacitance Cies Rise time tr ton Turn-on time Switching time Fall time tf Turn-off time toff 3V 0 51 Ω 2Ω Gate-emitter cut-off voltage VIN: tr < = 100 ns tf < = 100 ns < 1% Duty cycle = μs ≒300V Note Note 1: Please use devices on condition that the junction temperature is below 150°C. Repetitive rating: pulse width limited by maximum junction temperature. Note 2a : Device mounted on a glass-epoxy board (a) Note 2b : Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit : mm) FR-4 25.4 × 25.4 × 0.8 (unit : mm) for GATE for COLLECTOR for EMITTER for COLLECTOR for EMITTER for GATE Note 3: ○ on lower right of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) ※ Pb-Free Finish (Only a coating lead terminal) : It is marking about an underline to a week of manufacture mark. 2 2007-04-23 GT8G136 Caution on handling This device is MOS gate type. Therefore , please care of a protection from ESD in your handling . Caution in design You should be design dV/dt value under Icp=150A is below 400 V/μs when IGBT turn off under Ta=70℃ . You should be design to don’t flow collector current through terminal number 3 . ●definition of dv/dt The slope of VCE from 30v to 90v (attached figure.1) dv/dt = (90V-30V) / (⊿t) = 60V / ⊿t ●waveform (expansion) ●waveform IC IC(begin) VCE IC(end) VCE 90V 30V 0V, 0A dv/dt ⊿t period ●Gate drive connection 5,6,7,8 RG RGE 4 driver 3 1,2 3 2007-04-23 GT8G136 IC – VCE IC – VCE 200 200 3.5 (A) 160 2.5 120 3.5 VGE = 4.0 V 3.0 Collector current IC Collector current IC (A) VGE = 4.0 V 80 40 3.0 160 2.5 120 80 40 Common emitter Common emitter Ta = −10°C 0 0 1 2 3 Collector-emitter voltage Ta = 25°C 4 0 0 5 VCE (V) 1 2 Collector-emitter voltage 4 5 VCE (V) IC – VGE IC – VCE 200 3 160 VGE =4.0 V 3.5 120 (A) 3.0 Collector current IC 2.5 80 40 120 70 25 80 40 Common emitter Common emitter VCE = 5 Ta[ = 70°C 1 2 3 Collector-emitter voltage 4 0 0 5 VCE (V) VCE (V) 1000 Collector-emitter voltage (pF) 4 5 VGE (V) 600 Cies Capacitance C 3 VCE, VGE – QG C – VCE Common emitter VGE = 0 V f = 1 MHz Ta = 25°C Coes Cres 10 1 2 Gate-emitter voltage 10000 100 1 10 Collector-emitter voltage 100 500 5 VGE 400 4 300 3 Common emitter VCC = 300 V RL = 2.0 Ω Ta = 25°C 200 100 0 0 1000 6 VCE 10 20 30 40 2 1 VGE (V) 0 0 Gate-emitter voltage Collector current IC (A) Ta = −10°C 160 0 50 Gate charge QG (nC) VCE (V) 4 2007-04-23 GT8G136 Switching Time – IC Switching Time – RG 10 Common emitter VCE = 300 V VGE = 3 V IC = 150 A Ta Switching time (μs) Switching time (μs) 10 ton 3 tf toff toff tf 1 ton Common emitter VCC = 300 V VGE = 3 V RG = 51 Ω Ta = 25°C tr tr 1 1 100 10 Gate resistance 0.1 0 1000 50 Minimum Gate Drive Area 200 (A) Maximum Operating Area 800 70 Ta 160 Main capacitance CM (μF) ICP (A) Peak collector current 150 Collector current IC RG (Ω) 200 Ta 120 80 40 0 0 100 2 4 Gate-emitter voltage 6 600 400 VCM = 350 V 200 Ta < = 70°C VGE = 3.0 V < RG = < 300 Ω 33 Ω = 0 0 8 VGE (V) 40 80 120 Peak collector current 5 160 ICP 200 (A) 2007-04-23 GT8G136 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-04-23