GT40Q323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q323 Voltage Resonance Inverter Switching Application • Enhancement-mode • High speed: tf = 0.14 μs (typ.) (IC = 40A) • FRD included between emitter and collector • 4th generation • TO-3P (N) (Toshiba package name) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±25 V @ Tc = 100°C Continuous collector current @ Tc = 25°C Pulsed collector current Diode forward current Collector power dissipation IC 20 39 ICP 80 DC IF 10 Pulsed IFP 80 @ Tc = 100°C @ Tc = 25°C Junction temperature Storage temperature range PC 80 200 A A A W Tj 150 °C Tstg −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) Rth (j-c) 0.625 °C/W Thermal resistance (diode) Rth (j-c) 1.79 °C/W Equivalent Circuit Collector Gate Emitter 1 2006-11-01 GT40Q323 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±25 V, VCE = 0 ― ― ±500 nA Collector cut-off current ICES VCE = 1200 V, VGE = 0 ― ― 5.0 mA VGE (OFF) IC = 40 mA, VCE = 5 V 4.0 ― 7.0 V VCE (sat) IC = 40 A, VGE = 15 V ― 3.0 3.7 V VCE = 10 V, VGE = 0, f = 1 MHz ― 5550 ― pF Resistive Load ― 0.18 ― VCC = 600 V, IC = 40 A ― 0.26 ― VGG = ±15 V, RG = 39 Ω ― 0.14 0.21 ― 0.43 ― Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Cies tr Rise time Switching time Turn-on time ton Fall time tf Turn-off time (Note 1) toff μs Diode forward voltage VF IF = 10 A, VGE = 0 ― ― 2.1 V Reverse recovery time trr IF = 10 A, di/dt = −20 A/μs ― 0.4 ― µs Note 1: Switching time measurement circuit and input/output waveforms VGE 90% 10% 0 RG RL IC 0 90% VCC 0 90% 10% VCE 10% td (off) tf toff 2 tr ton 2006-11-01 GT40Q323 IC – VCE IC – VCE 80 80 8 Common emitter Common emitter Tc = −40 °C Tc = 25 °C (A) 10 60 15 Collector current IC Collector current IC (A) 20 40 7 20 VGE = 6 V 0 0 2 4 6 Collector-emitter voltage VCE 10 15 40 7 20 (V) VGE = 6 V 2 IC – VCE 6 VCE 8 (V) IC – VGE 80 Common emitter 20 8 Common emitter Tc = 125 °C VCE = 5 V (A) 10 60 15 Collector current IC (A) 4 Collector-emitter voltage 80 Collector current IC 8 60 0 0 8 20 7 40 20 60 40 Tc = 125°C 20 25 VGE = 6 V −40 0 0 2 4 6 Collector-emitter voltage 0 0 8 VCE (V) 2 4 Gate-emitter voltage 6 8 10 VGE (V) VCE (sat) – Tc Collector-emitter saturation voltage VCE (sat) (V) 6 5 Common emitter VGE = 15 V IC = 80 A 4 40 3 20 10 2 1 0 −60 −20 20 60 100 140 Case temperature Tc (°C) 3 2006-11-01 GT40Q323 VCE, VGE – QG C – VCE 20 200 10 VCE = 300 V 100 100 5 200 0 0 80 160 Cies 1000 500 300 100 Coes 50 30 Cres 10 Switching time (μs) 3 1 0.5 0.3 tf ton 0.1 tr 0.05 10 20 30 Collector current IC Common emitter 3 VCC = 600 V IC = 40 A VGG = ±15 V Tc = 25°C 1 40 0.3 tf 0.1 0.05 10 (A) 50 3 RG = 10 Ω (A) 100 μs* 100 50 30 10 5 3 100 300 Collector-emitter voltage VCE 10 VGG = 20 V 300 10 1 1 (Ω) Tj ≤ 125°C 500 1 ms* DC operation 1000 Reverse bias SOA 10 μs* IC max (continuous) RG 1000 100 IC max (pulsed) * 10 ms* 100 Gate resistance Collector current IC Collector current IC (A) 300 3 ton tr 0.01 1 50 *Single non-repetitive pulse Tc = 25°C Curves must be derated linearly with increases in temperature. 500 5 toff 0.5 Safe operating area 1000 30 (V) 0.03 0.03 0.01 1 VCE 10000 Switching time – RG Common emitter VCC = 600 V RG = 39 Ω VGG = ±15 V Tc = 25°C toff 1000 5 Switching time (μs) 5 100 Collector-emitter voltage (nC) Switching time – IC 10 Common emitter VGE = 0 f = 1 MHz Tc = 25°C 5000 3000 10 1 0 320 240 Gate charge QG (pF) 15 10000 Capacitance C 300 30000 VGE (V) Common emitter RL = 7.5 Ω Tc = 25°C Gate-emitter voltage Collector-emitter voltage VCE (V) 400 30 1000 1 1 3000 (V) 4 3 10 30 100 300 Collector-emitter voltage VCE 1000 3000 (V) 2006-11-01 GT40Q323 Rth (t) – tw 101 (°C/W) Tc = 25°C Transient thermal impedance Rth (t) Diode stage 10 0 IGBT stage 10−1 10−2 10−3 10−5 10−4 10−3 10−2 100 10−1 Pulse width tw 101 (s) IC max – Tc IF – VF 80 Common collector VGE = 15 V VGE = 0 (A) Common emitter 30 Forward current IF 20 10 50 75 100 125 Tc = 125°C 60 40 20 10 0 150 1 Case temperature Tc (°C) 2 6 4 trr 0.2 2 Common collector di/dt = −20 A/μs (V) (µs) 0.4 Forward current IF 40 trr 40 32 0.3 24 0.2 16 0.1 8 lrr Tc = 25°C 30 Common collector IF = 10 A Tc = 25 °C trr Reverse recovery time lrr Reverse recovery current lrr Reverse recovery time 0.5 (A) 0.6 20 4 trr, lrr – di/dt 8 trr (µs) trr, lrr – IF 10 3 Forward voltage VF 0.8 0.0 0 25 (A) 0 25 −40 Reverse recovery current lrr Maximum DC collector current IC max (A) 40 0.4 102 0 50 0.0 0 (A) 40 80 120 160 200 0 240 di/dt (A/µs) 5 2006-11-01 GT40Q323 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-01