GT50J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J122 Current Resonance Inverter Switching Application • Enhancement mode type • High speed : tf = 0.16 μs (typ.) (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A) • Fourth-generation IGBT • TO-3P(N) (Toshiba package name) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±25 V Continuous collector current @ Tc = 100°C @ Tc = 25°C Pulsed collector current Collector power dissipation 31 IC 50 ICP @ Tc = 100°C @ Tc = 25°C Junction temperature Storage temperature range 120 62 PC 156 A A W JEDEC ― ― Tj 150 °C JEITA Tstg −55 to 150 °C TOSHIBA 2-16C1C Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance Symbol Max Unit Rth (j-c) 0.80 °C/W Marking TOSHIBA GT50J122 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT50J122 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±25 V, VCE = 0 ― ― ±500 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 ― ― 1.0 mA VGE (OFF) IC = 60 mA, VCE = 5 V 3.0 ― 6.0 V VCE (sat) IC = 60 A, VGE = 15 V ― 1.9 2.5 V VCE = 10 V, VGE = 0, f = 1 MHz ― 4800 ― pF Resistive Load ― 0.17 ― VCC = 300 V, IC = 60 A ― 0.23 ― VGG = ±15 V, RG = 30 Ω ― 0.16 0.26 ― 0.41 ― Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Cies tr Rise time Switching time Turn-on time ton Fall time tf Turn-off time (Note 1) toff μs Note 1: Switching time measurement circuit and input/output waveforms VGE 90% 10% 0 RG RL IC 0 90% VCC 0 90% 10% VCE 10% td (off) tf toff 2 tr ton 2006-11-01 GT50J122 IC – VCE IC – VCE 120 Common emitter Tc = −40°C 100 (A) (A) Collector current IC 8 80 7 60 40 VGE = 6 V 20 0 0 1 2 3 4 Collector-emitter voltage 15 100 10 20 Common emitter Tc = 25°C 15 Collector current IC 120 Common emitter 7 60 40 VGE = 6 V 20 0 0 5 VCE (V) 1 2 7 60 40 VGE = 6 V 20 2 VCE (V) Common emitter VCE = 5 V 80 60 40 25 −40 20 1 5 (A) 15 Collector current IC (A) Collector current IC 100 8 80 0 0 4 IC – VGE 120 20 100 3 Collector-emitter voltage 10 Tc = 125°C 8 80 IC – VCE 120 10 20 3 Collector-emitter voltage 4 0 0 5 Tc = 125°C 2 4 Gate-emitter voltage VCE (V) 6 8 10 VGE (V) VCE (sat) – Tc Collector-emitter saturation voltage VCE (sat) (V) 3.2 IC = 120 A 2.4 80 60 1.6 30 10 0.8 Common emitter VGE = 15 V 0.0 −60 −20 20 60 100 140 Case temperature Tc (°C) 3 2006-11-01 GT50J122 VCE, VGE – QG C – VCE 20 200 10 VCE = 300 V 100 5 100 0 0 200 80 160 (pF) 15 10000 Capacitance C 300 30000 VGE (V) Common emitter RL = 5 Ω Tc = 25°C Gate-emitter voltage Collector-emitter voltage VCE (V) 400 1000 500 300 Coes 100 50 30 10 0.0 0 320 240 Cies 5000 3000 1 10 Switching Time – RG 5 toff 3 ton Switching time (μs) Switching time (μs) VCE (V) 10 Common emitter 3 V CC = 300 V IC = 60 A VGG = ±15 V 1 Tc = 25°C tr 0.5 tf 0.3 0.1 0.05 Common emitter VCC = 300 V RG = 30 Ω VGG = ±15 V Tc = 25°C 1 0.5 toff 0.3 tf 0.1 t on 0.05 0.03 tr 0.03 0.01 0 10 100 Gate resistance RG 0.01 0 1000 (Ω) 10 20 Safe Operating Area 1000 (A) (A) 50 60 70 (A) Reverse Bias SOA Curves must be derated linearly with increases in temperature. IC max (pulsed) * 40 3000 *: Single non-repetitive pulse Tc = 25°C IC max (continuous) 30 Collector current IC 1000 100 Collector current IC Collector current IC 1000 Switching Time – IC 5 10 μs* 30 100 μs* 10 100 Collector-emitter voltage Gate charge QG (nC) 300 Cres Common emitter VGE = 0 f = 1 MHz Tc = 25°C 10 ms* 1 ms* 3 500 300 Tj ≤ 125°C VGG = 20 V RG = 10 Ω 100 50 30 10 5 3 DC operation 1 1 10 100 Collector-emitter voltage 1000 1 1 10000 VCE (V) 10 100 Collector-emitter voltage 4 1000 10000 VCE (V) 2006-11-01 GT50J122 ICmax – Tc Transient thermal impedance rth (t) (°C/W) Maximum DC collector current ICmax (A) 60 Common emitter VGE = 15 V 50 40 30 20 10 0 25 50 75 Case temperature 100 Tc 125 150 (°C) rth (t) – tw 102 Tc = 25°C 101 100 10−1 10−2 10−3 10−5 10−4 10−3 10−2 Pulse width 5 10−1 tw 100 101 102 (s) 2006-11-01 GT50J122 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-01