TOSHIBA GT50J122

GT50J122
TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT50J122
Current Resonance Inverter Switching Application
•
Enhancement mode type
•
High speed : tf = 0.16 μs (typ.) (IC = 60A)
•
Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)
•
Fourth-generation IGBT
•
TO-3P(N) (Toshiba package name)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VGES
±25
V
Continuous collector
current
@ Tc = 100°C
@ Tc = 25°C
Pulsed collector current
Collector power
dissipation
31
IC
50
ICP
@ Tc = 100°C
@ Tc = 25°C
Junction temperature
Storage temperature range
120
62
PC
156
A
A
W
JEDEC
―
―
Tj
150
°C
JEITA
Tstg
−55 to 150
°C
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance
Symbol
Max
Unit
Rth (j-c)
0.80
°C/W
Marking
TOSHIBA
GT50J122
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2006-11-01
GT50J122
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±25 V, VCE = 0
―
―
±500
nA
Collector cut-off current
ICES
VCE = 600 V, VGE = 0
―
―
1.0
mA
VGE (OFF)
IC = 60 mA, VCE = 5 V
3.0
―
6.0
V
VCE (sat)
IC = 60 A, VGE = 15 V
―
1.9
2.5
V
VCE = 10 V, VGE = 0, f = 1 MHz
―
4800
―
pF
Resistive Load
―
0.17
―
VCC = 300 V, IC = 60 A
―
0.23
―
VGG = ±15 V, RG = 30 Ω
―
0.16
0.26
―
0.41
―
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Cies
tr
Rise time
Switching time
Turn-on time
ton
Fall time
tf
Turn-off time
(Note 1)
toff
μs
Note 1: Switching time measurement circuit and input/output waveforms
VGE
90%
10%
0
RG
RL
IC
0
90%
VCC
0
90%
10%
VCE
10%
td (off)
tf
toff
2
tr
ton
2006-11-01
GT50J122
IC – VCE
IC – VCE
120
Common emitter
Tc = −40°C
100
(A)
(A)
Collector current IC
8
80
7
60
40
VGE = 6 V
20
0
0
1
2
3
4
Collector-emitter voltage
15
100
10
20
Common emitter
Tc = 25°C
15
Collector current IC
120
Common emitter
7
60
40
VGE = 6 V
20
0
0
5
VCE (V)
1
2
7
60
40
VGE = 6 V
20
2
VCE (V)
Common emitter
VCE = 5 V
80
60
40
25
−40
20
1
5
(A)
15
Collector current IC
(A)
Collector current IC
100
8
80
0
0
4
IC – VGE
120
20
100
3
Collector-emitter voltage
10
Tc = 125°C
8
80
IC – VCE
120
10
20
3
Collector-emitter voltage
4
0
0
5
Tc = 125°C
2
4
Gate-emitter voltage
VCE (V)
6
8
10
VGE (V)
VCE (sat) – Tc
Collector-emitter saturation voltage
VCE (sat) (V)
3.2
IC = 120 A
2.4
80
60
1.6
30
10
0.8
Common emitter
VGE = 15 V
0.0
−60
−20
20
60
100
140
Case temperature Tc (°C)
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GT50J122
VCE, VGE – QG
C – VCE
20
200
10
VCE = 300 V
100
5
100
0
0
200
80
160
(pF)
15
10000
Capacitance C
300
30000
VGE (V)
Common emitter
RL = 5 Ω
Tc = 25°C
Gate-emitter voltage
Collector-emitter voltage
VCE (V)
400
1000
500
300
Coes
100
50
30
10
0.0
0
320
240
Cies
5000
3000
1
10
Switching Time – RG
5
toff
3
ton
Switching time (μs)
Switching time (μs)
VCE (V)
10
Common emitter
3 V
CC = 300 V
IC = 60 A
VGG = ±15 V
1 Tc = 25°C
tr
0.5
tf
0.3
0.1
0.05
Common emitter
VCC = 300 V
RG = 30 Ω
VGG = ±15 V
Tc = 25°C
1
0.5
toff
0.3
tf
0.1 t
on
0.05
0.03
tr
0.03
0.01
0
10
100
Gate resistance
RG
0.01
0
1000
(Ω)
10
20
Safe Operating Area
1000
(A)
(A)
50
60
70
(A)
Reverse Bias SOA
Curves must be derated
linearly with increases in
temperature.
IC max (pulsed) *
40
3000
*: Single non-repetitive
pulse Tc = 25°C
IC max
(continuous)
30
Collector current IC
1000
100
Collector current IC
Collector current IC
1000
Switching Time – IC
5
10 μs*
30
100 μs*
10
100
Collector-emitter voltage
Gate charge QG (nC)
300
Cres
Common emitter
VGE = 0
f = 1 MHz
Tc = 25°C
10 ms*
1 ms*
3
500
300
Tj ≤ 125°C
VGG = 20 V
RG = 10 Ω
100
50
30
10
5
3
DC operation
1
1
10
100
Collector-emitter voltage
1000
1
1
10000
VCE (V)
10
100
Collector-emitter voltage
4
1000
10000
VCE (V)
2006-11-01
GT50J122
ICmax – Tc
Transient thermal impedance rth (t) (°C/W)
Maximum DC collector current ICmax (A)
60
Common
emitter
VGE = 15 V
50
40
30
20
10
0
25
50
75
Case temperature
100
Tc
125
150
(°C)
rth (t) – tw
102
Tc = 25°C
101
100
10−1
10−2
10−3
10−5
10−4
10−3
10−2
Pulse width
5
10−1
tw
100
101
102
(s)
2006-11-01
GT50J122
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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