GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application • Fifth-generation IGBT • Enhancement mode type • High speed : tf = 0.41 μs (typ.) (IC = 40A) • Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A) • FRD included between emitter and collector Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±25 V @ Tc = 100°C Continuous collector current @ Tc = 25°C Pulsed collector current Diode forward current Collector power dissipation 23 IC ICP 80 DC IF 10 Pulsed IFP 80 @ Tc = 100°C @ Tc = 25°C Junction temperature Storage temperature range A 42 A A JEDEC ― JEITA ― 68 W 170 W Tj 150 °C TOSHIBA Tstg −55 to 150 °C Weight: 4.6 g (typ.) PC 2-16C1C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) Rth (j-c) 0.74 °C/W Thermal resistance (diode) Rth (j-c) 1.79 °C/W Equivalent Circuit Marking Collector TOSHIBA GT40Q321 Gate Emitter Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT40Q321 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±25 V, VCE = 0 ― ― ±500 nA Collector cut-off current ICES VCE = 1200 V, VGE = 0 ― ― 5.0 mA VGE (OFF) IC = 40 mA, VCE = 5 V 4.0 ― 7.0 V VCE (sat) IC = 40 A, VGE = 15 V ― 2.8 3.6 V VCE = 10 V, VGE = 0, f = 1 MHz ― 3200 ― pF Resistive Load ― 0.19 ― VCC = 600 V, IC = 40 A ― 0.25 ― VGG = ±15 V, RG = 39 Ω ― 0.41 0.72 ― 0.57 ― Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Cies tr Rise time Switching time Turn-on time ton Fall time tf Turn-off time (Note 1) toff μs Diode forward voltage VF IF = 10 A, VGE = 0 ― ― 2.0 V Reverse recovery time trr IF = 10 A, di/dt = −20 A/μs ― 0.6 ― µs Note 1: Switching time measurement circuit and input/output waveforms VGE 90% 10% 0 RG RL IC 0 90% VCC 0 90% 10% VCE 10% td (off) tf toff tr ton General Safety Precautions and Usage Considerations • The GT40Q321 is only intended for single-transistor voltage resonant circuits in induction heating (IH) equipment. For other applications, please contact your nearest Toshiba sales office. • Do not use devices under conditions in which their maximum ratings will be exceeded. A device may break down or its performance may be degraded, causing thermal runaway or explosion resulting in injury to the user. It is therefore necessary to incorporate device derating into circuit design. • In all IGBT devices, maximum collector-emitter voltage (VCES) decreases when the junction temperature becomes low. It is therefore necessary to incorporate device derating into circuit design. • Maximum collector current is calculated from Tj MAX.(150°C), the thermal resistance and DC forward power dissipation. However it’s limited in real application by another factor such as switching loss, limitation of the inner bonding wires and so on. 2 2006-11-01 GT40Q321 IC – VCE VCE – VGE 10 20 15 Common emitter 12 60 VCE (V) Common emitter Tc = 25°C 10 Collector-emitter voltage Collector current IC (A) 80 40 VGE = 8 V 20 0 0 1 2 3 4 Collector-emitter voltage VCE Tc = −40°C 8 6 80 4 2 0 0 5 (V) 40 IC = 10 A 5 20 10 15 Gate-emitter voltage VCE – VGE 20 VGE (V) VCE – VGE 10 10 VCE (V) Common emitter Tc = 25°C 8 Collector-emitter voltage Collector-emitter voltage VCE (V) Common emitter 6 80 4 2 0 0 40 20 IC = 10 A 5 10 15 Gate-emitter voltage 20 Tc = 125°C 8 6 80 20 2 0 0 25 40 4 VGE (V) IC = 10 A 5 10 Collector-emitter saturation voltage VCE (sat) (V) (A) Collector current IC 40 20 25 Tc = 125°C 4 20 25 VGE (V) VCE (sat) – Tc 6 Common emitter VCE = 5 V 60 0 0 15 Gate-emitter voltage IC – VGE 80 25 5 Common emitter VGE = 15 V 80 4 40 3 20 2 IC = 10 A 1 −40 8 Gate-emitter voltage 12 0 −60 16 VGE (V) −20 20 60 100 140 Case temperature Tc (°C) 3 2006-11-01 GT40Q321 VCE, VGE – QG C – VCE 15 VCE = 300 V 200 100 V 10 200 V 100 5 0 0 50 100 5000 3000 Cies 1000 500 300 Coes 100 Common emitter 50 V GE = 0 30 f = 1 MHz Tc = 25°C 10 0.1 0.3 1 0 200 150 Gate charge QG 10000 (pF) 300 Capacitance C Common emitter RL = 7.5 Ω Tc = 25°C 50000 30000 VGE (V) 20 Gate-emitter voltage Collector-emitter volgate VCE (V) 400 (nC) Switching time (μs) 3 1 toff 0.3 tf 0.1 ton tr 0.05 0.01 0 10 20 30 Collector current IC 40 VCE (V) tf 0.3 ton tr 0.1 0.05 3 (A) 10 IC max (continuous) 10 μs* 10 Tj ≤ 125°C VGG = 20 V RG = 10 Ω 500 300 100 50 30 10 5 3 DC operation 3 1000 RG (Ω) 1000 10 ms* 10 5 3 100 μs* 300 Reverse bias SOA 100 IC max (pulsed)* 1 ms* 100 5000 3000 (A) 500 300 30 Gate resistance Collector current IC (A) 1000 toff 0.5 0.01 1 50 *Single non-repetitive pulse Tc = 25°C Curves must be derated linearly with increases in temperature. 1000 Collector current IC 300 Common emitter 3 VCC = 600 V IC = 40 A VGG = ±15 V Tc = 25°C 1 Safe operating area 5000 3000 1 1 100 0.03 0.03 50 30 30 Switching time – RG Common emitter VCC = 600 V RG = 39 Ω VGG = ±15 V Tc = 25°C 0.5 10 5 Switching time (μs) 5 3 Collector-emitter voltage Switching time – IC 10 Cres 30 100 300 Collector-emitter voltage 1000 1 1 3000 10000 VCE (V) 3 10 30 100 300 Collector-emitter voltage 4 1000 3000 10000 VCE (V) 2006-11-01 GT40Q321 rth (t) – tw Tc = 25°C Common emitter 102 VGE = 15 V Transient thermal impedance rth (t) (°C/W) 40 30 20 101 Diode stage 10 0 IGBT stage 10−1 10−2 10 10−3 10−5 0 25 50 75 100 Case temperature Tc 125 10−4 10−3 150 Pulse width 101 trr, Irr – IF 8 25 trr (μs) Tc = 125°C 60 40 20 (A) −40 102 tw (s) 0.8 Common collector VGE = 0 Reverse recovery time (A) Forward current IF 100 10−1 (°C) IF – V F 80 10−2 0.6 6 trr 0.4 Irr 4 0.2 2 Common collector di/dt = −20 A/μs Reverse recovery current Irr Maximum DC collector current ICmax (A) ICmax – Tc 50 Tc = 25°C 10 0 1 2 3 Forward voltage VF 0 0 4 (V) 10 20 30 Forward current IF 40 0 50 (A) trr, Irr – di/dt 0.6 12 trr 0.4 0.2 0.0 0 8 Irr 4 50 100 150 200 Reverse recovery current Reverse recovery time (A) 16 Irr 0.8 20 Common collector IF = 10 A Tc = 25°C trr (μs) 1.0 0 250 di/dt (A/μs) 5 2006-11-01 GT40Q321 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-01