GT35J321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT35J321 Fourth-generation IGBT Current Resonance Inverter Switching Applications z Enhancement mode z High speed: tf = 0.19 μs (typ.) (IC = 50 A) z Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50 A) z FRD included between emitter and collector z Toshiba package name: TO-3P(N)IS Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector−emitter voltage VCES 600 V Gate−emitter voltage VGES ±25 V Collector current (DC) @ Tc = 100°C @ Tc = 25°C Collector current (pulse) Diode forward current Collector power dissipation IC 18 37 ICP 100 DC IF 20 Pulse IFP 40 @ Tc = 100°C @ Tc = 25°C Junction temperature Storage temperature range PC 30 75 A 1. GATE 2. COLLECTOR A A W Tj 150 °C Tstg −55 to 150 °C 3. EMITTER JEDEC ⎯ JEITA ⎯ TOSHIBA 2-16F1A Weight: 5.8 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) Rth (j-c) 1.67 °C/W Thermal resistance (diode) Rth (j-c) 3.2 °C/W Equivalent Circuit Marking Collector TOSHIBA GT35J321 Gate Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Emitter 1 2008-03-26 GT35J321 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±25 V, VCE = 0 V ― ― ±500 nA Collector cut−off current ICES VCE = 600 V, VGE = 0 V ― ― 1.0 mA IC = 50 mA, VCE = 5 V 3.0 ― 6.0 V Gate-emitter cut-off voltage VGE (OFF) Collector-emitter saturation voltage VCE (sat) Input capacitance Cies Rise time Switching time tr Turn-on time ton Fall time tf Turn-off time IC = 50 A, VGE = 15 V ― 1.9 2.3 V VCE = 10 V, VGE = 0 V, f = 1 MHz ― 2500 ― pF Resistive Load ― 0.24 ― VCC = 300 V, IC = 50 A ― 0.33 ― VGG = ±15 V, RG = 39 Ω ― 0.19 0.32 ― 0.51 ― (Note 1) toff μs Diode forward voltage VF IF = 15 A, VGE = 0 V ― ― 2.0 V Reverse recovery time trr IF = 15 A, di / dt = −100 A / μs ― ― 0.2 μs Note 1: Switching time measurement circuit and input/output waveforms VGE 90% 10% 0 RG RL IC 0 90% VCC 0 90% 10% VCE 10% td (off) tf toff 2 tr ton 2008-03-26 GT35J321 IC – VCE IC – VCE 100 100 Common emitter Tc = 25°C 15 20 10 (A) 80 9 Collector current IC (A) Collector current IC 10 Common emitter Tc = −40°C 60 40 8 20 15 9 80 20 60 8 40 VGE = 7 V 20 VGE = 7 V 0 0 1 2 3 4 Collector-emitter voltage 0 0 5 VCE (V) 1 5 VCE (V) 100 10 Common emitter 9 VCE = 5 V 20 (A) 80 15 8 Collector current IC (A) 4 IC – VGE Common emitter Collector current IC 3 Collector-emitter voltage IC – VCE 100 Tc = 125°C 2 60 VGE = 7 V 40 20 80 60 40 25 20 Tc = 125°C −40 0 0 1 2 3 Collector-emitter voltage 4 0 0 5 2 4 Gate-emitter voltage VCE (V) 6 8 10 VGE (V) VCE (sat) – Tc 4 Collector-emitter saturation voltage VCE (sat) (V) Common emitter VGE = 15 V IC = 100 A 3 70 50 2 30 10 1 0 −40 0 40 80 120 160 Case temperature Tc (°C) 3 2008-03-26 GT35J321 VCE, VGE – QG C – VCE 300 12 VCE = 300 V 200 8 100 200 100 4 0 0 160 80 240 320 Cies (pF) 16 10000 Capacitance C 400 20 VGE (V) Common emitter RL = 6 Ω Tc = 25°C Gate-emitter voltage Collector-emitter voltage VCE (V) 500 1000 100 Common emitter VGE = 0 V f = 1 MHz Tc = 25°C 0 400 10 1 Gate charge QG (nC) Switching time (μs) Switching time (μs) toff ton tr 0.1 10 100 Gate resistance RG Common emitter VCC = 300 V RG = 39 Ω VGG = ±15 V Tc = 25°C 1 toff ton tr 0.01 0 1000 tf 0.1 (Ω) 10 20 (A) 10 μs* 0.1 1 IC max (continuous) 100 μs* DC operation 10 1 ms* 100 Collector-emitter voltage 50 60 (A) 1000 Tj ≤ 125°C VGG = 20 V Collector current IC (A) Collector current IC 100 40 Reverse Bias SOA 1000 *: Single non-repetitive pulse Tc = 25°C Curves must be derated linearly with increases in temperature. 10 ms* 30 Collector current IC Safe Operating Area 1000 1 VCE (V) Switching Time – IC tf 10 1000 10 1 IC max (pulsed) * 100 Collector-emitter voltage Common emitter VCC = 300 V IC = 50 A VGG = ±15 V Tc = 25°C 0.01 1 Cres 10 Switching Time – RG 10 Coes 10 1 0.1 1 10000 VCE (V) RG = 39 Ω 100 10 100 Collector-emitter voltage 4 1000 10000 VCE (V) 2008-03-26 GT35J321 ICmax – Tc Transient thermal impedance rth (t) (°C/W) Common emitter VGE = 15 V 40 30 20 10 50 75 100 Tc Case temperature 125 150 Tc = 25°C 101 Diode stage 100 IGBT stage 10−1 10−2 10−3 10−5 10−4 10−3 (°C) 10−2 Pulse width VGE = 0 V Peak reverse recovery current Forward current IF (A) 40 30 20 25 Tc = 125°C −40 0.4 0.8 1.2 Forward voltage VF 1.6 30 300 10 100 trr 5 3 50 30 Irr 1 0 2.0 Common emitter di/dt = −100 A/μs VGE = 0 V Tc = 25°C 4 8 10 5 3 Reverse voltage 50 100 VR (V) 100 0 300 500 Irr (A) (ns) trr 30 Reverse recovery time Cj (pF) Junction capacitance 50 Peak reverse recovery current 200 100 30 10 20 16 (A) Irr, trr – di/dt Tc = 25°C 10 12 Forward current IF f = 1 MHz 5 (s) 500 Cj – V R 3 102 50 (V) 300 1 1 101 trr Irr (A) Common emitter 0 0 tw 100 Irr, trr – IF IF – V F 50 10 10−1 (ns) 0 25 rth (t) – tw 102 Reverse recovery time Maximum DC collector current ICmax (A) 50 Common collector IF = 15 A Tc = 25°C 10 trr 8 6 4 Irr 2 0 0 40 80 120 160 200 di/dt (A/μs) 5 2008-03-26 GT35J321 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2008-03-26