TOSHIBA GT10J321_06

GT10J321
TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT10J321
High Power Switching Applications
Fast Switching Applications
•
•
•
•
•
•
•
Unit: mm
Fourth-generation IGBT
Enhancement mode type
Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: tf = 0.03 μs (typ.)
Low switching loss : Eon = 0.26 mJ (typ.)
: Eoff = 0.18 mJ (typ.)
Low saturation voltage: VCE (sat) = 2.0 V (typ.)
FRD included between emitter and collector
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VGES
±25
V
@ Tc = 100°C
Continuous Collector
current
@ Tc = 25°C
Pulsed collector current
Diode forward current
Collector power
dissipation
IC
5
10
ICP
20
DC
IF
10
Pulsed
IFP
20
@ Tc = 100°C
@ Tc = 25°C
Junction temperature
Storage temperature range
PC
11
29
A
A
A
JEDEC
―
JEITA
―
W
TOSHIBA
Weight: 1.7 g
Tj
150
°C
Tstg
−55~150
°C
2-10R1C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance (IGBT)
Rth (j-c)
4.31
°C/W
Thermal resistance (diode)
Rth (j-c)
4.90
°C/W
Equivalent Circuit
Marking
Collector
Gate
K2662
Part No. (or abbreviation code)
Lot No.
Emitter
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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GT10J321
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±25 V, VCE = 0
⎯
⎯
±500
nA
Collector cut-off current
ICES
VCE = 600 V, VGE = 0
⎯
⎯
1.0
mA
VGE (OFF)
IC = 1 mA, VCE = 5 V
3.5
⎯
6.5
V
VCE (sat)
IC = 10 A, VGE = 15 V
⎯
2.0
2.45
V
VCE = 10 V, VGE = 0, f = 1 MHz
⎯
1550
⎯
pF
td (on)
⎯
0.06
⎯
tr
⎯
0.03
⎯
Inductive load
⎯
0.17
⎯
VCC = 300 V, IC = 10 A
⎯
0.24
⎯
⎯
0.03
⎯
⎯
0.30
⎯
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Cies
Turn-on delay time
Rise time
Switching time
Turn-on time
ton
Turn-off delay time
td (off)
Fall time
Switching loss
tf
VGG = +15 V, RG = 68 Ω
(Note 1)
Turn-off time
toff
Turn-on switching
loss
Eon
⎯
0.26
⎯
Turn-off switching
loss
Eoff
⎯
0.18
⎯
(Note 2)
μs
mJ
Peak forward voltage
VF
IF = 10 A, VGE = 0
⎯
⎯
2.0
V
Reverse recovery time
trr
IF = 10 A, di/dt = −100 A/μs
⎯
100
⎯
ns
Note 1: Switching time measurement circuit and input/output waveforms
VGE
90%
10%
0
−VGE
IC
L
IC
VCC
90%
90%
RG
VCE
0
VCE
10%
10%
td (off)
10%
td (on)
10%
tr
tf
toff
ton
Note 2: Switching loss measurement waveforms
VGE
90%
10%
0
IC
0
VCE
5%
Eoff
Eon
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GT10J321
IC – VCE
VCE – VGE
20
20
VCE (V)
Common emitter
15
16
10
20
Collector-emitter voltage
Collector current IC
(A)
Common emitter
Tc = 25°C
12
9
8
4
0
0
VGE = 8 V
1
2
3
Collector-emitter voltage
4
Tc = −40°C
16
20
12
10
8
0
0
5
IC = 5 A
4
VCE (V)
4
8
12
Gate-emitter voltage
16
VGE (V)
VCE – VGE
VCE – VGE
20
20
Common emitter
VCE (V)
Tc = 25°C
16
Collector-emitter voltage
Collector-emitter voltage
VCE (V)
Common emitter
12
20
10
8
IC = 5 A
4
0
0
4
8
12
Gate-emitter voltage
16
Tc = 125°C
16
12
20
10
8
IC = 5 A
4
0
0
20
4
8
VGE (V)
IC – VGE
20
VCE (sat) – Tc
Common emitter
Collector-emitter saturation voltage
VCE (sat) (V)
(A)
16
VGE (V)
4
Common emitter
VCE = 5 V
Collector current IC
12
Gate-emitter voltage
20
16
12
8
Tc = 125°C
4
25
0
0
20
4
20
VGE = 15 V
15
3
10
5
2
IC = 2 A
1
−40
8
12
Gate-emitter voltage
16
0
−60
20
VGE (V)
−20
20
60
100
140
Case temperature Tc (°C)
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Switching Time
1
td(on), tr, ton – RG
Switching Time
td(on), tr, ton – IC
10
Common emitter
VCC = 300 V
VGG = 15 V
IC = 10 A
: Tc = 25°C
: Tc = 125°C
Switching time td(on), tr, ton (µs)
Switching time td(on), ton, tr (µs)
10
ton
0.1
td(on)
tr
Common emitter
VCC = 300 V
VGG = 15 V
RG = 68 Ω
: Tc = 25°C
: Tc = 125°C
1
ton
0.1
td(on)
tr
0.01
1
10
100
Gate resistance
Switching Time
1
1000
td(off), tf, toff – RG
Switching Time
td(off)
tf
10
100
Gate resistance
Switching Loss
RG
(A)
td(off), tf, toff – IC
Common emitter
VCC = 300 V
VGG = 15 V
RG = 68 Ω
: Tc = 25°C
: Tc = 125°C
toff
td(off)
0.1
tf
0
2
(Ω)
4
Switching Loss
Eon, Eoff – RG
6
10
8
(A)
Eon, Eoff – IC
1
Eon, Eoff (mJ)
Eoff
Common emitter
VCC = 300 V
VGG = 15 V
IC = 10 A
: Tc = 25°C
: Tc = 125°C
(Note 2)
10
Gate resistance
100
RG
Eon
0.1
Switching loss
Eon, Eoff (mJ)
10
8
Collector current IC
Eon
Switching loss
6
1
0.01
1000
1
0.01
1
4
10
Common emitter
VCC = 300 V
VGG = 15 V
IC = 10 A
: Tc = 25°C
: Tc = 125°C
toff
0.1
2
Collector current IC
0.1
0.01
1
0
(Ω)
Switching time td(off), tf, toff (µs)
Switching time td(off), tf, toff (µs)
10
RG
0.01
Common emitter
VCC = 300 V
VGG = 15 V
RG = 68 Ω
: Tc = 25°C
: Tc = 125°C
Eoff
(Note 2)
0.01
1000
(Ω)
0
2
4
6
Collector current IC
4
8
10
(A)
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GT10J321
C – VCE
VCE, VGE – QG
10000
500
20
100
Coes
10
0.1
Cres
1
10
100
Collector-emitter voltage
RL = 30 Ω
Tc = 25°C
300
12
300
200
8
VCE = 100 V
4
20
VCE (V)
40
IF − VF
trr, Irr − IF
1000
trr (ns)
Common collector
VGE = 0
Reverse recovery time
Forward current IF
(A)
16
12
Tc = 125°C
8
25
4
−40
0.4
0.8
0
80
60
Gate charge QG (nC)
20
0
0
200
100
0
0
1000
16
1.2
1.6
Forward voltage VF
100
Common collector
di/dt = −100 A/μs
VGE = 0
: Tc = 25°C
: Tc = 125°C
trr
100
10
Irr
10
0
2.0
2
(V)
4
6
8
Forward current IF
Safe Operating Area
Reverse recovery current Irr (A)
Common emitter
VGE = 0
f = 1 MHz
Tc = 25°C
400
VGE (V)
1000
Collector-emitter voltage
Capacitance C
(pF)
Cies
Gate-emitter voltage
VCE (V)
Common emitter
1
10
(A)
Reverse Bias SOA
100
100
10
(A)
50 μs*
Collector current IC
Collector current IC
(A)
IC max (pulsed)*
IC max (continuous)
DC
operation
100 μs*
1
*: Single nonrepetitive
pulse
Tc = 25°C
1 ms*
Curves must be derated
linearly with increase in
temperature.
0.1
1
10
Collector-emitter voltage
10
1
Tj <
= 125°C
VGE = 15 V
RG = 68 Ω
10 ms*
100
0.1
1
1000
VCE (V)
10
Collector-emitter voltage
5
100
1000
VCE (V)
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GT10J321
ICmax – Tc
10
Common
emitter
VGE = 15 V
10
Transient thermal impedance
rth (t) (°C/W)
Maximum DC collector current ICmax (A)
12
8
6
4
2
0
25
10
75
Case temperature
100
Tc
125
10
10
10
10
150
(°C)
Tc = 25°C
1
FRD
10
50
rth (t) – tw
2
0
IGBT
−1
−2
−3
−4
10
−5
10
−4
10
−3
10
−2
Pulse width
6
10
−1
tw
10
0
10
1
10
2
(s)
2006-11-01
GT10J321
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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