GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10J321 High Power Switching Applications Fast Switching Applications • • • • • • • Unit: mm Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.03 μs (typ.) Low switching loss : Eon = 0.26 mJ (typ.) : Eoff = 0.18 mJ (typ.) Low saturation voltage: VCE (sat) = 2.0 V (typ.) FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±25 V @ Tc = 100°C Continuous Collector current @ Tc = 25°C Pulsed collector current Diode forward current Collector power dissipation IC 5 10 ICP 20 DC IF 10 Pulsed IFP 20 @ Tc = 100°C @ Tc = 25°C Junction temperature Storage temperature range PC 11 29 A A A JEDEC ― JEITA ― W TOSHIBA Weight: 1.7 g Tj 150 °C Tstg −55~150 °C 2-10R1C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) Rth (j-c) 4.31 °C/W Thermal resistance (diode) Rth (j-c) 4.90 °C/W Equivalent Circuit Marking Collector Gate K2662 Part No. (or abbreviation code) Lot No. Emitter A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT10J321 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±25 V, VCE = 0 ⎯ ⎯ ±500 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 ⎯ ⎯ 1.0 mA VGE (OFF) IC = 1 mA, VCE = 5 V 3.5 ⎯ 6.5 V VCE (sat) IC = 10 A, VGE = 15 V ⎯ 2.0 2.45 V VCE = 10 V, VGE = 0, f = 1 MHz ⎯ 1550 ⎯ pF td (on) ⎯ 0.06 ⎯ tr ⎯ 0.03 ⎯ Inductive load ⎯ 0.17 ⎯ VCC = 300 V, IC = 10 A ⎯ 0.24 ⎯ ⎯ 0.03 ⎯ ⎯ 0.30 ⎯ Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Cies Turn-on delay time Rise time Switching time Turn-on time ton Turn-off delay time td (off) Fall time Switching loss tf VGG = +15 V, RG = 68 Ω (Note 1) Turn-off time toff Turn-on switching loss Eon ⎯ 0.26 ⎯ Turn-off switching loss Eoff ⎯ 0.18 ⎯ (Note 2) μs mJ Peak forward voltage VF IF = 10 A, VGE = 0 ⎯ ⎯ 2.0 V Reverse recovery time trr IF = 10 A, di/dt = −100 A/μs ⎯ 100 ⎯ ns Note 1: Switching time measurement circuit and input/output waveforms VGE 90% 10% 0 −VGE IC L IC VCC 90% 90% RG VCE 0 VCE 10% 10% td (off) 10% td (on) 10% tr tf toff ton Note 2: Switching loss measurement waveforms VGE 90% 10% 0 IC 0 VCE 5% Eoff Eon 2 2006-11-01 GT10J321 IC – VCE VCE – VGE 20 20 VCE (V) Common emitter 15 16 10 20 Collector-emitter voltage Collector current IC (A) Common emitter Tc = 25°C 12 9 8 4 0 0 VGE = 8 V 1 2 3 Collector-emitter voltage 4 Tc = −40°C 16 20 12 10 8 0 0 5 IC = 5 A 4 VCE (V) 4 8 12 Gate-emitter voltage 16 VGE (V) VCE – VGE VCE – VGE 20 20 Common emitter VCE (V) Tc = 25°C 16 Collector-emitter voltage Collector-emitter voltage VCE (V) Common emitter 12 20 10 8 IC = 5 A 4 0 0 4 8 12 Gate-emitter voltage 16 Tc = 125°C 16 12 20 10 8 IC = 5 A 4 0 0 20 4 8 VGE (V) IC – VGE 20 VCE (sat) – Tc Common emitter Collector-emitter saturation voltage VCE (sat) (V) (A) 16 VGE (V) 4 Common emitter VCE = 5 V Collector current IC 12 Gate-emitter voltage 20 16 12 8 Tc = 125°C 4 25 0 0 20 4 20 VGE = 15 V 15 3 10 5 2 IC = 2 A 1 −40 8 12 Gate-emitter voltage 16 0 −60 20 VGE (V) −20 20 60 100 140 Case temperature Tc (°C) 3 2006-11-01 GT10J321 Switching Time 1 td(on), tr, ton – RG Switching Time td(on), tr, ton – IC 10 Common emitter VCC = 300 V VGG = 15 V IC = 10 A : Tc = 25°C : Tc = 125°C Switching time td(on), tr, ton (µs) Switching time td(on), ton, tr (µs) 10 ton 0.1 td(on) tr Common emitter VCC = 300 V VGG = 15 V RG = 68 Ω : Tc = 25°C : Tc = 125°C 1 ton 0.1 td(on) tr 0.01 1 10 100 Gate resistance Switching Time 1 1000 td(off), tf, toff – RG Switching Time td(off) tf 10 100 Gate resistance Switching Loss RG (A) td(off), tf, toff – IC Common emitter VCC = 300 V VGG = 15 V RG = 68 Ω : Tc = 25°C : Tc = 125°C toff td(off) 0.1 tf 0 2 (Ω) 4 Switching Loss Eon, Eoff – RG 6 10 8 (A) Eon, Eoff – IC 1 Eon, Eoff (mJ) Eoff Common emitter VCC = 300 V VGG = 15 V IC = 10 A : Tc = 25°C : Tc = 125°C (Note 2) 10 Gate resistance 100 RG Eon 0.1 Switching loss Eon, Eoff (mJ) 10 8 Collector current IC Eon Switching loss 6 1 0.01 1000 1 0.01 1 4 10 Common emitter VCC = 300 V VGG = 15 V IC = 10 A : Tc = 25°C : Tc = 125°C toff 0.1 2 Collector current IC 0.1 0.01 1 0 (Ω) Switching time td(off), tf, toff (µs) Switching time td(off), tf, toff (µs) 10 RG 0.01 Common emitter VCC = 300 V VGG = 15 V RG = 68 Ω : Tc = 25°C : Tc = 125°C Eoff (Note 2) 0.01 1000 (Ω) 0 2 4 6 Collector current IC 4 8 10 (A) 2006-11-01 GT10J321 C – VCE VCE, VGE – QG 10000 500 20 100 Coes 10 0.1 Cres 1 10 100 Collector-emitter voltage RL = 30 Ω Tc = 25°C 300 12 300 200 8 VCE = 100 V 4 20 VCE (V) 40 IF − VF trr, Irr − IF 1000 trr (ns) Common collector VGE = 0 Reverse recovery time Forward current IF (A) 16 12 Tc = 125°C 8 25 4 −40 0.4 0.8 0 80 60 Gate charge QG (nC) 20 0 0 200 100 0 0 1000 16 1.2 1.6 Forward voltage VF 100 Common collector di/dt = −100 A/μs VGE = 0 : Tc = 25°C : Tc = 125°C trr 100 10 Irr 10 0 2.0 2 (V) 4 6 8 Forward current IF Safe Operating Area Reverse recovery current Irr (A) Common emitter VGE = 0 f = 1 MHz Tc = 25°C 400 VGE (V) 1000 Collector-emitter voltage Capacitance C (pF) Cies Gate-emitter voltage VCE (V) Common emitter 1 10 (A) Reverse Bias SOA 100 100 10 (A) 50 μs* Collector current IC Collector current IC (A) IC max (pulsed)* IC max (continuous) DC operation 100 μs* 1 *: Single nonrepetitive pulse Tc = 25°C 1 ms* Curves must be derated linearly with increase in temperature. 0.1 1 10 Collector-emitter voltage 10 1 Tj < = 125°C VGE = 15 V RG = 68 Ω 10 ms* 100 0.1 1 1000 VCE (V) 10 Collector-emitter voltage 5 100 1000 VCE (V) 2006-11-01 GT10J321 ICmax – Tc 10 Common emitter VGE = 15 V 10 Transient thermal impedance rth (t) (°C/W) Maximum DC collector current ICmax (A) 12 8 6 4 2 0 25 10 75 Case temperature 100 Tc 125 10 10 10 10 150 (°C) Tc = 25°C 1 FRD 10 50 rth (t) – tw 2 0 IGBT −1 −2 −3 −4 10 −5 10 −4 10 −3 10 −2 Pulse width 6 10 −1 tw 10 0 10 1 10 2 (s) 2006-11-01 GT10J321 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-01