2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4108 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage VDSS 500 V Drain−gate voltage (RGS = 20 kΩ) VDGR 500 V Gate−source voltage VGSS ±30 V (Note 1) ID 20 A Pulse (Note 1) IDP 80 A PD 150 W Single-pulse avalanche energy (Note 2) EAS 960 mJ Avalanche current IAR 20 A Repetitive avalanche energy (Note 3) EAR 15 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current DC Drain power dissipation (Tc = 25°C) 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ― JEITA ― TOSHIBA 2-16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 0.833 °C / W Thermal resistance, channel to ambient Rth (ch−a) 50 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.08 mH, RG = 25 Ω, IAR = 20 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2007-06-29 2SK4108 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Gate leakage current Gate−source breakdown voltage Drain cutoff current Drain−source breakdown voltage Test Condition Min Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V — — ±10 μA V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 — — V IDSS VDS = 500 V, VGS = 0 V — — 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 500 — — V Vth VDS = 10 V, ID = 1 mA 2.0 — 4.0 V Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 10 A — 0.21 0.27 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 10 A 4.0 14 — S Input capacitance Ciss — 3400 — Reverse transfer capacitance Crss — 25 — Output capacitance Coss — 320 — — 70 — — 130 — — 70 — — 280 — — 70 — — 45 — — 25 — Gate threshold voltage Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz tr ton RL = 20 Ω 50 Ω Turn on time ID = 10A 出力 VGS 10 V 0V Switching time Fall time ns tf Turn off time VDD ∼ − 200 V Duty < = 1%, tw = 10 μs toff Total gate charge (gate−source plus gate−drain) Qg Gate−source charge Qgs Gate−drain (“Miller”) charge Qgd pF VDD ≈ 400 V, VGS = 10 V, ID = 20 A nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 20 A Pulse drain reverse current (Note 1) IDRP — — — 80 A Forward voltage (diode) VDSF IDR = 20 A, VGS = 0 V — — −1.7 V Reverse recovery time trr — 1300 — ns Reverse recovery charge Qrr IDR = 20 A, VGS = 0 V dIDR / dt = 100 A / μs — 20 — μC Marking TOSHIBA K4108 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2007-06-29 2SK4108 ID – VDS ID – VDS 10 20 Common source 10 Tc = 25°C Pulse Test 10 6 8 (A) (A) 8 ID 5.25 6 Drain current ID 6 16 8 Drain current Common source Tc = 25°C Pulse Test 5.5 5 4 2 5.75 12 5.5 8 5.25 5 4 4.5 4.5 VGS = 4V VGS = 4 V 0 0 1 2 3 Drain-source voltage 4 VDS 0 5 0 (V) 10 40 VDS 50 (V) VDS – VGS 20 (V) Common source VDS = 20 V Pulse Test Common source Tc = 25°C Pulse Test 16 VDS 40 30 20 Drain-source voltage ID (A) 30 Drain-source voltage ID – VGS 50 Drain current 20 25 Tc = −55°C 100 12 8 ID = 20 A 4 10 5 0 0 2 4 6 Gate-source voltage 8 VGS 0 10 0 (V) |Yfs| – ID 12 16 VGS 20 (V) RDS (ON) – ID Common source VDS = 20 V Pulse Test Tc = −55°C 100 10 25 1 8 1.0 Drain-source ON resistance RDS (ON) (Ω) Forward transfer admittance ⎪Yfs⎪ (S) 100 4 Gate-source voltage 1 10 100 Drain current ID (A) Common source Tc = 25°C VGS = 10 V Pulse Test 0.1 1 10 100 Drain current ID (A) 3 2007-06-29 2SK4108 RDS (ON) − Tc IDR − VDS 100 Common source VGS = 10 V Pulse Test Drain reverse current IDR (A) Drain-source ON resistance RDS (ON) (Ω) 1.0 0.8 0.6 10 ID = 20A 5 0.4 0.2 Common source Tc = 25°C Pulse Test 10 10 1 5 3 0 40 80 120 0.1 160 VGS = 0 V 1 0 0.2 Case temperature Tc (°C) 0.4 0.6 0.8 1.0 Drain-source voltage VDS 5 Gate threshold voltage Vth (V) (pF) Capacitance C 1000 Coss 100 Common source VGS = 0 V f = 1 MHz Tc = 25°C Crss 10 Drain-source voltage VDS 4 3 2 1 0 −80 100 −40 (V) 80 120 160 (V) 500 20 VDS 400 16 VDS 150 Drain-source voltage PD (W) 40 Dynamic input / output characteristics 200 Drain power dissipation 0 Case temperature Tc (°C) PD − Tc 100 50 0 (V) Common source VDS = 10 V ID = 1mA Pulse Test Ciss 1 1.4 Vth − Tc Capacitance – VDS 10000 10 0.1 1.2 0 40 80 120 160 200V 300 400V Case temperature Tc (°C) 8 200 VGS 100 0 0 200 12 VDD = 100V Common source ID = 20 A Ta = 25°C Pulse Test 20 40 60 80 4 100 VGS (V) −40 Gate-source voltage 0 −80 0 120 Total gate charge Qg (nC) 4 2007-06-29 2SK4108 EAS – Tch SAFE OPERATING AREA 1000 EAS (mJ) 1000 ID max (pulse) * 100 Avalanche energy Drain current ID (A) 100 μs * ID max (continuous) 1 ms * 10 DC OPEATION Tc = 25°C 1 ※ Single pulse Ta=25℃ 0.1 Curves must be derated linearly with increase in temperature. 800 600 400 200 0 25 VDSS max 50 75 100 125 Channel temperature (initial) 150 Tch (°C) 0.01 1 10 Drain-source voltage 100 1000 VDS (V) BVDSS 15 V IAR −15 V VDS VDD Test circuit RG = 25 Ω VDD = 90 V, L = 4.08 mH 5 Wave form Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2007-06-29 2SK4108 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-06-29