SANKEN 2SC3264

2SC3264
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295)
■Electrical Characteristics
Symbol
Conditions
2SC3264
Unit
VCB=230V
100max
µA
VEB=5V
100max
µA
IC=25mA
230min
V
24.4±0.2
VCEO
230
V
IEBO
VEBO
5
V
V(BR)CEO
IC
17
A
hFE
VCE=4V, IC=5A
50min∗
IB
5
A
VCE(sat)
IC=5A, IB=0.5A
2.0max
V
PC
200(Tc=25°C)
W
fT
VCE=12V, IE=–2A
60typ
MHz
Tj
150
°C
COB
VCB=10V, f=1MHz
250typ
pF
–55 to +150
°C
∗hFE Rank O(50 to 100), Y(70 to 140)
21.4±0.3
7
9
a
b
2
3
5.45±0.1
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
60
12
5
10
–5
0.5
–0.5
0.30typ
2.40typ
0.50typ
A
10
200m
A
10 0m A
5
50mA
I B =20mA
0
0
1
2
3
2
1
I C =10A
0
4
0
0.5
1.0
1.5
0
2.0
h FE – I C Temperature Characteristics (Typical)
(V C E =4V)
200
200
100
Typ
50
100
Transient Thermal Resistance
DC Curr ent Gain h FE
DC Curr ent Gain h FE
125˚C
25˚C
–30˚C
50
10
1
1
5
10 17
0.02
Collector Current I C (A)
0.1
0.5
3
1
5
10 17
θ j-a – t Characteristics
3
1
0.5
0.1
1
10
100
1000 2000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
2
Base-Emittor Voltage V B E (V)
(V C E =4V)
0.5
0
Base Current I B (A)
h FE – I C Characteristics (Typical)
0.1
5
5A
Collector-Emitter Voltage V C E (V)
10
0.02
10
p)
400m
15
em
60
0mA
eT
A
Cas
1.0
˚C (
Collector Current I C (A)
15
(V CE =4V)
17
125
A
1.5
Collector Current I C (A)
A
E
I C – V BE Temperature Characteristics (Typical)
3
θ j- a ( ˚ C/ W)
0
2.
C
Weight : Approx 18.4g
a. Type No.
b. Lot No.
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t) (V )
3
A
.0
3.0 +0.3
-0.1
5.45±0.1
B
VCC
(V)
I C – V CE Characteristics (Typical)
0.65 +0.2
-0.1
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
17
2.1
2-ø3.2±0.1
20.0min
Tstg
6.0±0.2
36.4±0.3
mp)
ICBO
e Te
V
(Cas
Unit
230
–30˚C
2SC3264
VCBO
External Dimensions MT-200
(Ta=25°C)
25˚C
■Absolute maximum ratings (Ta=25°C)
Symbol
Application : Audio and General Purpose
4.0max
LAPT
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
40
200
10
–1
Emitter Current I E (A)
64
–10
3
10
100
Collector-Emitter Voltage V C E (V)
300
nk
0.1
–0.1
si
0
–0.02
at
Without Heatsink
Natural Cooling
he
0.5
20
120
ite
1
fin
Co lle ctor Cu rrent I C ( A)
5
160
In
40
s
ith
Typ
60
m
DC
10
W
Cut-o ff Fr eque ncy f T ( MH Z )
80
Ma xim um Powe r Dissipat io n P C (W)
100
80
40
5
0
Without Heatsink
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150