2SA1907 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5099) –10max µA –6 V V(BR)CEO IC=–50mA –80min V –6 A hFE –3 A VCE(sat) IC=–12A, IB=–0.2A –0.5max V PC 60(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 150typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2 -0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ –20mA –2 I B =–10mA –1 0 –1 0 –2 –3 –4 –1 –2A 0 0 –0.5 –1.0 (V C E =–4V) 300 DC Cur rent Gain h FE Typ 100 50 125˚C 25˚C –30˚C 100 50 30 –0.02 –5 –6 –0.1 Collector Current I C (A) –1 –0.5 –1.5 –1 –5 –6 θ j-a – t Characteristics 5 1 0.5 0.3 1 10 Collector Current I C (A) f T – I E Characteristics (Typical) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 60 –10 DC 0m s ms s he at si nk Without Heatsink Natural Cooling ite –0.5 fin –1 40 In 10 –5 10 ith 20 1m 10 W Collecto r Cur rent I C ( A) Typ Ma xim um Powe r Dissipation P C (W) –20 30 Cu t-of f Fr eque ncy f T ( MH Z ) DC Curr ent Gain h F E 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 300 –1 0 –1.5 (V C E =–4V) –0.5 p) I C =–6A Base Current I B (A) h FE – I C Characteristics (Typical) –0.1 –2 –4A Collector-Emitter Voltage V C E (V) 30 –0.02 Tem –30mA –4 se –3 –2 (Ca –50mA (V CE =–4V) ˚C –4 E 125 A –8 0m A Collector Current I C (A) –1 00 m –5 C Weight : Approx 6.5g a. Part No. b. Lot No. –6 –3 A θ j- a ( ˚C/W) –1 m 50 3.35 1.5 I C – V BE Temperature Characteristics (Typical) Transient Thermal Resistance 0 A Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) –2 0m 4.4 B V CE ( sa t ) – I B Characteristics (Typical) 0.65 +0.2 -0.1 5.45±0.1 1.5 VCC (V) –6 0.8 2.15 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 1.75 mp) Tstg e Te Tj ø3.3±0.2 a b 3.3 IB 3.45 ±0.2 3.0 50min∗ VCE=–4V, IC=–2A 0.8±0.2 VEB=–6V 5.5 IEBO 5.5±0.2 1.6 V 15.6±0.2 (Cas IC µA –30˚C VEBO –10max ) –80 VCB=–80V emp VCEO ICBO se T V Unit (Ca –80 Ratings 25˚C VCBO External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Symbol 23.0±0.3 Unit 9.5±0.2 ■Electrical Characteristics (Ta=25°C) Ratings Symbol 16.2 ■Absolute maximum ratings Application : Audio and General Purpose 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 5 6 –0.1 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 35