2SA1386/1386A Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A) –180 V(BR)CEO –180min –160min IC=–25mA IB –4 A hFE VCE=–4V, IC=–5A 50min∗ PC 130(Tc=25°C) W VCE(sat) IC=–5A, IB=–0.5A –2.0max Tj Tstg 150 °C fT VCE=–12V, IE=2A 40typ MHz °C COB VCB=–10V, f=1MHz 500typ pF IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –40 4 –10 –10 5 –1 1 0.3typ 0.7typ 0.2typ m A –3 00 m A –200mA –10 –150mA –100mA –5 –50mA I B =–20mA 0 0 –1 –2 –3 –3 –15 –2 –1 0 0 –0.2 –0.4 –0.6 –0.8 –1 –5 –10 –15 Transient Thermal Resistance DC Curr ent Gain h FE 0 –1 125˚C 100 25˚C –30˚C 50 20 –0.02 –0.1 θ j-a – t Characteristics –0.5 –1 –5 –10 –15 3 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) –2 Base-Emittor Voltage V B E (V) (V C E =–4V) DC Curr ent Gain h FE –0.5 0 –1.0 h FE – I C Temperature Characteristics (Typical) Typ –0.1 –5 Base Current I B (A) 200 10 –0.02 –10 I C =–10A (V C E =–4V) 100 (V C E =–4V) –5A –4 h FE – I C Characteristics (Typical) 1.8 I C – V BE Temperature Characteristics (Typical) Collector-Emitter Voltage V C E (V) 300 1.4 E Weight : Approx 6.0g a. Part No. b. Lot No. ˚C ( – 0 40 C 125 A 5.45±0.1 B Collector Current I C (A) Collector Current I C (A) –7 00 –5 m 00 5.45±0.1 0.65 +0.2 -0.1 V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) m A –15 2 3 1.05 +0.2 -0.1 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) RL (Ω) I C – V CE Characteristics (Typical) 2.0 V VCC (V) ø3.2±0.1 b –55 to +150 ■Typical Switching Characteristics (Common Emitter) a V mp) A e Te –15 (Cas IC V µA –100max VEB=–5V p) IEBO mp) V 2.0±0.1 –30˚C –5 4.8±0.2 5.0±0.2 –160 VCB= VEBO 15.6±0.4 9.6 µA em V –100max eT –180 ICBO –100max e Te –160 V Cas VCEO –180 (Cas –160 Conditions Symbol 25˚C VCBO Unit 4.0 2SA1386 2SA1386A θ j - a (˚C /W ) Symbol External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit 2SA1386A 2SA1386 19.9±0.3 Ratings 4.0max ■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics Application : Audio and General Purpose 20.0min LAPT 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 130 –40 10 DC 0.1 1 Emitter Current I E (A) 18 10 –0.05 –3 –10 –50 –100 Collector-Emitter Voltage V C E (V) 2 –200 nk 1 0 0.02 si –0.1 at 1.2SA1386 2.2SA1386A he Without Heatsink Natural Cooling ite –1 –0.5 100 fin 20 –5 In Collecto r Cur ren t I C ( A) p ith Ty W Cut-o ff Fr eque ncy f T (MH Z ) –10 40 ms Ma xim um Powe r Dissipation P C ( W) 60 50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150