RB085T-40 Diodes Schottky barrier diode RB085T-40 zExternal dimensions (Unit : mm) zStructure 9.9 0.8 2.2 0.3 zApplications Switching power supply 10.0 1.8± 0.2 4.5±0.3 0.1 2.8±0.2 0.1 1.1 ① 15.0 7.2 8.0 8.0± 0.2 12.0± 0.2 φ3.1±0.1 φ1.2 17.0± 0.4 0.2 7.0±0.3 0.1 5.0± 0.2 13.5MIN 1.2 1.3 0.8 zConstruction Silicon epitaxial planar (1) (2) (3) 0.7±0.015 2.54±0.5 2.6±0.03 2.6± 0.03 7.2 1.6 3-φ1.2 ROHM : ＴO220FN ① 0.8 1.35 7.0 1.9 0.7± 0.015 2.54±0.5 12.4 zFeatures 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability 10.0±0.3 0.1 Manufacture date zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current（*1） Forward current surge peak （60Hz・1cyc）（*1） Junction temperature Storage temperature Limits 45 40 10 100 150 -40 to +150 Symbol VRM VR Io IFSM Tj Tstg Unit V V A A ℃ ℃ (*1)Tc=100℃max. Per chip : Io/2 zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR θjc Min. - Typ. - Max. 0.55 200 2.5 Unit V µA ℃/W Conditions IF=5A VR=40V junction to case Rev.A 1/3 RB085T-40 Diodes zElectrical characteristic curves Ta=150℃ Ta=-25℃ 1 Ta=75℃ Ta=25℃ 0.1 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=125℃ 100 200 300 400 500 1000 f=1MHz 10000 0.01 0 Ta=125℃ 100000 Ta=150℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 Ta=75℃ 1000 100 Ta=25℃ 10 Ta=-25℃ 1 100 10 0.1 1 0.01 600 0 10 20 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 530 0 40 500 AVE:504.0mV 490 250 200 150 100 AVE:20.3uA AVE:8.172uA σ:1.9469uA 50 Ta=25℃ f=1MHz VR=0V n=10pcs 790 Ta=25℃ VR=30V n=30pcs VR=40V n=30pcs 780 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 510 REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) Ta=25℃ 520 30 800 300 Ta=25℃ IF=5A n=30pcs 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 770 760 750 AVE:728.1pF 740 730 720 710 480 0 700 VF DISPERSION MAP IR DISPERSION MAP 30 1cyc Ifsm 200 8.3ms 150 AVE:236.0A 100 50 1000 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 AVE:12.30ns 5 PEAK SURGE FORWARD CURRENT:IFSM(A) 250 RESERVE RECOVERY TIME:trr(ns) 300 PEAK SURGE FORWARD CURRENT:IFSM(A) Ct DISPERSION MAP 0 0 Ifsm 8.3ms 8.3ms 1cyc 100 10 1 t 100 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Mounted on epoxy board IM=100mA 10 1ms 15 D=1/2 Rth(j-a) time 300us Rth(j-c) 1 0.1 0.001 100 IF=1A FORWARD POWER DISSIPATION:Pf(W) 100 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP IFSM DISRESION MAP DC Sin(θ＝180) 10 5 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 5 10 15 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.A 20 2/3 RB085T-40 Diodes 5 D=1/2 2 DC 1 0A 0V 20 DC Io t T VR D=t/T VR=20V Tj=150℃ D=1/2 10 Sin(θ＝180) 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 40 0A 0V 20 Io t T DC VR D=t/T VR=20V Tj=150℃ D=1/2 10 Sin(θ＝180) 0 0 0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Sin(θ＝180) 3 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 4 REVERSE POWER DISSIPATION:PR (W) 30 30 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curve (Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curve (Io-Tc) ELECTROSTATIC DDISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 AVE:11.5kV 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1