BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features · · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A B · · Min Max A 4.45 4.70 B 4.46 4.70 C 12.7 — D 0.41 0.63 E 3.43 3.68 G 2.42 2.67 H 1.14 1.40 C Mechanical Data · · TO-92 Dim Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connection: See Diagram Weight: 0.18 grams (approx.) Maximum Ratings D SG D BOTTOM VIEW All Dimensions in mm H G H @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Drain-Gate Voltage VDGS 60 V Gate-Source-Voltage (pulsed) VGS ±20 V Drain Current (continuous) ID 300 mA Power Dissipation @TC = 25°C (Note 1) Pd 830 mW Tj 150 °C Tj, TSTG -55 to +150 °C Symbol Value Unit Maximum Forward Current (continuous) IF 0.50 A Forward Voltage Drop (typ.) @ VGS = 0, IF = 0.5A, Tj = 25°C VF 0.85 V Junction Temperature Operating and Storage Temperature Range Inverse Diode @ TA = 25°C unless otherwise specified Characteristic Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol Min Typ Max Unit V(BR)DSS 60 90 — V Test Condition VGS(th) 0.8 1.0 3.0 V VGS = VDS, ID = 1.0mA ID = 100µA, VGS = 0 Gate-Body Leakage Current IGSS — — 10 nA VGS = 15V, VDS = 0 Drain-Cutoff Current IDSS — — 0.5 µA VDS = 25V, VGS = 0 rDS (ON) — 3.5 5.0 W VGS = 10V, ID = 0.2mA RqJA — — 150 K/W Forward Transconductance gFS — 200 — mm VDS = 10V, ID = 0.2A, f = 1MHz Input Capacitance Ciss — 60 — pF VDS = 10V, VGS = 0, f =1.0MHz Turn On Time Turn Off Time ton toff — 5.0 15 — ns VGS = 10V, VDS = 10V, RD = 100W Drain-Source ON Resistance Thermal Resistance, Junction to Ambient Air Notes: Note 1 1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case. DS21802 Rev. D-3 1 of 2 BS170 0.8 ID (ON), DRAIN SOURCE ON CURRENT (A) Pd, POWER DISSIPATION (W) 1 (See Note 1) 0.6 0.4 0.2 1 7V 0.8 VGS = 6V 0.6 Pulse test width 80µs; pulse duty factor 1% 5V 0.4 4V 0.2 3V 0.1 0 0 100 0 200 40 60 1.0 TA = 25°C 0.8 Pulse test width 80µs; pulse duty factor 1% 4.5V 200 4.0V 3.5V 100 100 TA = 25°C 400 300 80 VDS = 10V VGS = 5V ID, DRAIN CURRENT (A) ID (ON), DRAIN SOURCE ON-CURRENT (mA) 500 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2. Output Characteristics TA, AMBIENT TEMPERATURE (ºC) Fig. 1. Power Derating Curve Pulse test width 80µs; pulse duty factor 1% 0.6 0.4 0.2 3.0V 0 0 2 0 4 6 8 0 10 gf s, FORWARD TRANSCONDUCTANCE (mm) 500 VDS = 10V Pulse test width 80µs; pulse duty factor 1% 400 2 4 6 10 8 VGS, GATE-SOURCE VOLTAGE (V) Fig. 4. Drain Current vs Gate-Source Voltage VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 3. Saturation Characteristics gfs, FORWARD TRANSCONDUCTANCE (mm) TA = 25°C 300 200 100 0 500 VDS = 10V 400 Pulse test width 80µs; pulse duty factor 1% 300 200 100 0 0 2 4 6 8 0 10 VGS, GATE-SOURCE VOLTAGE (V) Fig. 5. Transconductance vs Gate-Source Voltage DS21802 Rev. D-3 100 200 300 400 500 ID, DRAIN CURRENT (mA) Fig. 6 Transconductance vs. Drain Current 2 of 2 BS170