BS170 Vishay Semiconductors formerly General Semiconductor DMOS Transistor (N-Channel) TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) Features min. 0.492 (12.5) 0.181 (4.6) • • • • • • • High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown On special request, this transistor is also manufactured in the pin configuration TO-18. Mechanical Data max. ∅ 0.022 (0.55) 0.098 (2.5) Dimensions in inches and (millimeters) Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk- 5K per container, 20K/box E7/4K per Ammo tape, 20K/box Bottom View Maximum Ratings and Thermal Characteristics Parameter (TA = 25°C unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDSS 60 V Drain-Gate Voltage VDGS 60 V VGS ± 20 V ID 300 mA Gate-Source-Voltage (pulsed) Drain Current (continuous) Power Dissipation at Tamb = 25°C Thermal Resistance Junction to Ambient Air Ptot RθJA (1) W (1) °C/W 0.83 150 Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case. Document Number 88179 10-May-02 www.vishay.com 1 BS170 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage V(BR)DSS ID = 100µA, VGS = 0 60 80 — V VGS(th) VGS = VDS, ID = 1mA 1.0 2 3.0 V Gate-Body Leakage Current IGSS VGS = 15V, VDS = 0 — — 10 nA Drain Cutoff Current IDSS VDS = 25V, VGS = 0 — — 0.5 µA RDS(on) VGS = 10V, ID = 0.2A — 3.5 5.0 Ω Forward Transconductance gm VDS = 10V, ID = 0.2A f = 1MHz — 200 — mS Input Capacitance Ciss VDS = 10V, VGS = 0, f = 1MHz — 30 — pF Turn-On Time ton VGS = 10V, VDS = 10V — 5 — ns Turn-Off Time toff RD = 100Ω 15 — ns Symbol Test Condition Value Unit Maximum Forward Current (continuous) IF Tamb = 25 °C 0.5 A Forward Voltage Drop (typ.) VF VGS = 0, IF = 0.5 A Tj = 25°C 0.85 V J Gate-Source Threshold Voltage Drain-Source ON Resistance — Inverse Diode Parameters www.vishay.com 2 Document Number 88179 10-May-02 BS170 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Document Number 88179 10-May-02 www.vishay.com 3 BS170 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) www.vishay.com 4 Document Number 88179 10-May-02 BS170 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Document Number 88179 10-May-02 www.vishay.com 5