ETC BS170/E7

BS170
Vishay Semiconductors
formerly General Semiconductor
DMOS Transistor (N-Channel)
TO-226AA (TO-92)
0.142 (3.6)
0.181 (4.6)
Features
min. 0.492 (12.5) 0.181 (4.6)
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•
•
•
•
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High input impedance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
On special request, this transistor is also
manufactured in the pin configuration TO-18.
Mechanical Data
max. ∅
0.022 (0.55)
0.098 (2.5)
Dimensions in inches
and (millimeters)
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
E6/Bulk- 5K per container, 20K/box
E7/4K per Ammo tape, 20K/box
Bottom
View
Maximum Ratings and Thermal Characteristics
Parameter
(TA = 25°C unless otherwise noted)
Symbol
Limit
Unit
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage
VDGS
60
V
VGS
± 20
V
ID
300
mA
Gate-Source-Voltage (pulsed)
Drain Current (continuous)
Power Dissipation at Tamb = 25°C
Thermal Resistance Junction to Ambient Air
Ptot
RθJA
(1)
W
(1)
°C/W
0.83
150
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
Document Number 88179
10-May-02
www.vishay.com
1
BS170
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (T
= 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
V(BR)DSS
ID = 100µA, VGS = 0
60
80
—
V
VGS(th)
VGS = VDS, ID = 1mA
1.0
2
3.0
V
Gate-Body Leakage Current
IGSS
VGS = 15V, VDS = 0
—
—
10
nA
Drain Cutoff Current
IDSS
VDS = 25V, VGS = 0
—
—
0.5
µA
RDS(on)
VGS = 10V, ID = 0.2A
—
3.5
5.0
Ω
Forward Transconductance
gm
VDS = 10V, ID = 0.2A
f = 1MHz
—
200
—
mS
Input Capacitance
Ciss
VDS = 10V, VGS = 0,
f = 1MHz
—
30
—
pF
Turn-On Time
ton
VGS = 10V, VDS = 10V
—
5
—
ns
Turn-Off Time
toff
RD = 100Ω
15
—
ns
Symbol
Test Condition
Value
Unit
Maximum Forward Current (continuous)
IF
Tamb = 25 °C
0.5
A
Forward Voltage Drop (typ.)
VF
VGS = 0, IF = 0.5 A
Tj = 25°C
0.85
V
J
Gate-Source Threshold Voltage
Drain-Source ON Resistance
—
Inverse Diode
Parameters
www.vishay.com
2
Document Number 88179
10-May-02
BS170
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Document Number 88179
10-May-02
www.vishay.com
3
BS170
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
www.vishay.com
4
Document Number 88179
10-May-02
BS170
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Document Number 88179
10-May-02
www.vishay.com
5