DIODES MMBT5401_08

MMBT5401
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Features
Mechanical Data
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Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT5551)
Ideal for Low Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 3)
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Case: SOT-23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
C
B
Top View
Maximum Ratings
E
Device Schematic
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Symbol
VCBO
VCEO
VEBO
IC
Value
-160
-150
-5.0
-600
Unit
V
V
V
mA
Symbol
PD
RθJA
TJ, TSTG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
MMBT5401
Document number: DS30057 Rev. 9 - 2
1 of 4
www.diodes.com
August 2008
© Diodes Incorporated
MMBT5401
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol
Min
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
-160
-150
-5.0
⎯
⎯
⎯
Collector Cutoff Current
ICBO
⎯
-50
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
IEBO
⎯
-50
V
V
V
nA
μA
nA
DC Current Gain
hFE
50
60
50
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
⎯
240
⎯
-0.2
-0.5
Base-Emitter Saturation Voltage
VBE(SAT)
⎯
-1.0
V
Cobo
⎯
6.0
pF
Small Signal Current Gain
hfe
40
200
⎯
Current Gain-Bandwidth Product
fT
100
300
MHz
Noise Figure
NF
⎯
8.0
dB
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Notes:
V
IC = -100μA, IE = 0
IC = -1.0mA, IB = 0
IE = -10μA, IC = 0
VCB = -120V, IE = 0
VCB = -120V, IE = 0, TA = 100°C
VEB = -3.0V, IC = 0
IC = -1.0mA, VCE = -5.0V
IC = -10mA, VCE = -5.0V
IC = -50mA, VCE = -5.0V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
VCB = -10V, f = 1.0MHz, IE = 0
VCE = -10V, IC = -1.0mA,
f = 1.0kHz
VCE = -10V, IC = -10mA,
f = 100MHz
VCE = -5.0V, IC = -200μA,
RS = 10Ω, f = 1.0kHz
4. Short duration pulse test used to minimize self-heating effect.
10,000
400
Note 1
VCE = 5V
350
300
1,000
hFE, DC CURRENT GAIN
PD, POWER DISSIPATION (mW)
⎯
Test Condition
250
200
150
100
TA = 150°C
100
T A = 25°C
10
TA = -50°C
50
0
50
75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
0
25
MMBT5401
Document number: DS30057 Rev. 9 - 2
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1
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
August 2008
© Diodes Incorporated
MMBT5401
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
10.0
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IC
= 10
IB
1.0
TA = 150°C
0.1
T A = -50°C
TA = 25°C
0.01
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.0
VCE = 5V
0.9
TA = -50°C
0.8
0.7
0.6
T A = 25°C
0.5
0.4
TA = 150°C
0.3
0.2
0.1
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
ft, GAIN-BANDWIDTH PRODUCT (MHz)
VCE = 10V
100
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Gain-Bandwidth Product vs. Collector Current
Ordering Information
(Note 5)
Part Number
MMBT5401-7-F
Notes:
Case
SOT-23
Packaging
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Date Code Key
Year
1998
Code
J
Month
Code
Jan
1
1999
K
2000
L
2001
M
Feb
2
MMBT5401
Document number: DS30057 Rev. 9 - 2
Mar
3
2002
N
2003
P
Apr
4
K4M
YM
Marking Information
2004
R
2005
S
May
5
K4M = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
2006
T
2007
U
Jun
6
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Jul
7
2008
V
2009
W
Aug
8
2010
X
Sep
9
2011
Y
2012
Z
Oct
O
2013
A
Nov
N
2014
B
2015
C
Dec
D
August 2008
© Diodes Incorporated
MMBT5401
Package Outline Dimensions
A
B C
H
K
M
K1
D
F
J
L
G
SOT-23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
α
All Dimensions in mm
Suggested Pad Layout
Y
Z
C
X
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
MMBT5401
Document number: DS30057 Rev. 9 - 2
4 of 4
www.diodes.com
August 2008
© Diodes Incorporated