SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW61 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES -20 -20 µA nA VCES =-32V VCES =-32V ,Tamb=150oC Emitter-Base Cut-Off Current IEBO -20 nA VEBO =-4V Collector-Emitter Saturation Voltage VCE(sat) -0.12 -0.25 -0.25 -0.55 V V IC=-10mA,IB= -0.25mA IC=-50mA, IB =-1.25mA PARAMETER SYMBOL VALUE UNIT Base-Emitter Saturation Voltage VBE(sat) -0.60 -0.68 -0.70 -0.80 -0.85 -1.05 V V IC =-10mA, IB=-0.25mA IC =-50mA, IB=-1.25mA Collector-Base Voltage VCBO -32 V Collector-Emitter Voltage VCEO -32 V Base - Emitter Voltage VBE -0.55 -0.65 -0.72 IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V VEBO -5 V -0.75 V V V Emitter-Base Voltage -0.6 Continuous Collector Current IC -200 mA Base Current IB -50 mA 330 mW -55 to +150 °C BCW61C BCW61D -32 V ICEO=-2mA -5 V IEBO=-1µA BCW60 Collector-Emitter Breakdown Voltage BCW61B CONDITIONS. COMPLEMENTARY TYPE MIN. hFE UNIT CA CB CC CD SYMBOL BCW61A 120 60 140 170 30 180 80 200 250 40 250 100 270 350 100 380 110 340 500 Transition Frequency fT 180 Emitter-Base Capacitance Cebo 11 Collector-Base Capacitance Ccbo Noise Figure N Switching times: Delay Time Rise Time Turn-on Time Storage Time Fall Time Turn-Off Time td tr ton ts tf toff 2 35 50 85 400 80 480 MAX. BCW61AR BCW61BR BCW61CR BCW61DR PARAMETER Static Forward Current Transfer Ratio TYP. ISSUE 2 FEBRUARY 95 PARTMARKING DETAIL BCW61A BA BCW61B BB BCW61C BC BCW61D BD BCW61 220 IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V 310 IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V 460 IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V 630 IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V MHz IC =10mA, VCE = -5V f = 100MHz pF VEBO= -0.5V,f =1MHz 6 pF VCBO = -10V, f =1MHz 6 dB IC =- 0.2mA, VCE =- 5V RG=2KΩ, f=1KHz ∆f=200Hz 150 800 ns ns ns ns ns ns -IC : -IB1 : IB2 =10:1:1mA R1=R2=5KΩ VBB =-3.6V, RL=990Ω E C B ABSOLUTE MAXIMUM RATINGS. Power Dissipation at Tamb=25°C PTOT Operating and Storage Temperature Range Tj:Tstg FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz) hFE Group A h11e hFE Group B hFE GroupC hFE Group D Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 h12e 1.5 2 2 3 h21e 200 260 330 520 h22e 18 30 24 50 30 +VBB R2 60 50 kΩ 10-4 100 µS VCC(-10V) RL 1µsec R1 -10V tr < 5nsec Mark/Space ratio < 0.01 Zs=50Ω 50Ω BAY 63 tr < 5nsec Zin ≥ 100kΩ Oscilloscope *Measured under pulsed conditions. Pulse width=300µs. Duty cycle Spice parameter data is available upon request for this device PAGE NO S W SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW61 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES -20 -20 µA nA VCES =-32V VCES =-32V ,Tamb=150oC Emitter-Base Cut-Off Current IEBO -20 nA VEBO =-4V Collector-Emitter Saturation Voltage VCE(sat) -0.12 -0.25 -0.25 -0.55 V V IC=-10mA,IB= -0.25mA IC=-50mA, IB =-1.25mA PARAMETER SYMBOL VALUE UNIT Base-Emitter Saturation Voltage VBE(sat) -0.60 -0.68 -0.70 -0.80 -0.85 -1.05 V V IC =-10mA, IB=-0.25mA IC =-50mA, IB=-1.25mA Collector-Base Voltage VCBO -32 V Collector-Emitter Voltage VCEO -32 V Base - Emitter Voltage VBE -0.55 -0.65 -0.72 IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V VEBO -5 V -0.75 V V V Emitter-Base Voltage -0.6 Continuous Collector Current IC -200 mA Base Current IB -50 mA 330 mW -55 to +150 °C BCW61C BCW61D -32 V ICEO=-2mA -5 V IEBO=-1µA BCW60 Collector-Emitter Breakdown Voltage BCW61B CONDITIONS. COMPLEMENTARY TYPE MIN. hFE UNIT CA CB CC CD SYMBOL BCW61A 120 60 140 170 30 180 80 200 250 40 250 100 270 350 100 380 110 340 500 Transition Frequency fT 180 Emitter-Base Capacitance Cebo 11 Collector-Base Capacitance Ccbo Noise Figure N Switching times: Delay Time Rise Time Turn-on Time Storage Time Fall Time Turn-Off Time td tr ton ts tf toff 2 35 50 85 400 80 480 MAX. BCW61AR BCW61BR BCW61CR BCW61DR PARAMETER Static Forward Current Transfer Ratio TYP. ISSUE 2 FEBRUARY 95 PARTMARKING DETAIL BCW61A BA BCW61B BB BCW61C BC BCW61D BD BCW61 220 IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V 310 IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V 460 IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V 630 IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V MHz IC =10mA, VCE = -5V f = 100MHz pF VEBO= -0.5V,f =1MHz 6 pF VCBO = -10V, f =1MHz 6 dB IC =- 0.2mA, VCE =- 5V RG=2KΩ, f=1KHz ∆f=200Hz 150 800 ns ns ns ns ns ns -IC : -IB1 : IB2 =10:1:1mA R1=R2=5KΩ VBB =-3.6V, RL=990Ω E C B ABSOLUTE MAXIMUM RATINGS. Power Dissipation at Tamb=25°C PTOT Operating and Storage Temperature Range Tj:Tstg FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz) hFE Group A h11e hFE Group B hFE GroupC hFE Group D Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 h12e 1.5 2 2 3 h21e 200 260 330 520 h22e 18 30 24 50 30 +VBB R2 60 50 kΩ 10-4 100 µS VCC(-10V) RL 1µsec R1 -10V tr < 5nsec Mark/Space ratio < 0.01 Zs=50Ω 50Ω BAY 63 tr < 5nsec Zin ≥ 100kΩ Oscilloscope *Measured under pulsed conditions. Pulse width=300µs. Duty cycle Spice parameter data is available upon request for this device PAGE NO S W