SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSUE 3 – MARCH 1996 FEATURES * 400 Volt VCEO * Ptot= 1 Watt C COMPLEMENTARY TYPE – FCX458 PARTMARKING DETAIL – P58 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -200 mA Peak Pulse Current ICM -500 mA Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -400 MAX. V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -400 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO ;ICES -100 nA VCB=-320V; VCES = 320V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.2 -0.5 V V IC=-20mA, IB=-2mA* IC=-50mA, IB=-6mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-50mA, IB=-5mA* Base-Emitter Turn On Voltage VBE(on) -0.9 V IC=-50mA, VCE=-10V* Static Forward Current Transfer Ratio hFE 100 100 15 Transition Frequency fT 50 Collector-Base Breakdown Voltage Cobo Switching times ton toff IC=-1mA, VCE=-10V IC=-50mA, VCE=-10V* IC=-100mA, VCE=-10V* 300 5 95 Typical 1600 Typical MHz IC=-10mA, VCE=-20V f=20MHz pF VCB=-20V, f=1MHz ns ns IC=-50mA, VC=-100V IB1=-5mA, IB2=-10mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device For typical characteristics graphs see FZT558 datasheet. 3 - 90