SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT653 FZT653 ISSUE 3 FEBRUARY 1995 FEATURES * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 C COMPLEMENTARY TYPE FZT753 PARTMARKING DETAIL FZT653 E 0.5 0.4 0.3 B 175 VCE=2V ABSOLUTE MAXIMUM RATINGS. 125 V h 0.2 0.1 75 0 0.0001 0.001 0.01 0.1 1 25 10 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 10 1.4 - (Volts) 1.0 1.0 IC/IB=10 VCE=2V 0.8 V 0.8 0.6 0.6 0.4 0.0001 0.001 0.01 0.1 10 0.0001 0.001 0.01 VBE(sat) v IC VBE(on) v IC =25°C tf IB1=IB2=IC/10 ns DC 1s 100ms 10ms 1ms 300µs 1 10 ts ns 280 2800 240 2400 200 2000 160 1600 120 1200 80 800 1 0.1 10 td tr 0.01 1 IC - Collector Current (Amps) amb 0.1 0.1 IC - Collector Current (Amps) Single Pulse Test at T 10 1 100 ts SYMBOL VALUE UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A Continuous Collector Current IC 2 A Power Dissipation at Tamb =25°C Ptot Operating and Storage Temperature Range Tj:Tstg 40 400 0 0 0.01 PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL MIN. 120 V(BR)CBO 2 W -55 to +150 °C tr 0.1 IC - Collector Current (Amps) Safe Operating Area Switching Speeds 1 TYP. MAX. UNIT V CONDITIONS. IC=100µA V(BR)CEO 100 V IC=10mA* V(BR)EBO 5 V IE=100µA µA µA VBE(sat) 0.13 0.23 0.9 0.1 10 0.1 0.3 0.5 1.25 V V V VCB=100V VCB=100V,Tamb=100°C VEB=4V IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* VBE(on) 0.8 1.0 V IC=1A, VCE =2V* MHz IC=50mA, VCE =2V* IC=500mA, VCE =2V* IC=1A, VCE =2V* IC=2A, VCE =2V* IC=100mA, VCE =5V f=100MHz VCB=10V, f=1MHz IC=500mA, VCC =10V IB1=IB2=50mA ICBO Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio IEBO VCE(sat) Transition Frequency fT Output Capacitance Switching Times Cobo ton toff hFE tf td VCE - Collector Emitter Voltage (V) 3 - 210 PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.2 Switching time - (Volts) 1.2 V C IC/IB=10 - Gain - (Volts) 225 70 100 55 25 140 200 200 110 55 175 300 30 80 1200 µA pF ns ns *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 209 SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT653 FZT653 ISSUE 3 FEBRUARY 1995 FEATURES * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 C COMPLEMENTARY TYPE FZT753 PARTMARKING DETAIL FZT653 E 0.5 0.4 0.3 B 175 VCE=2V ABSOLUTE MAXIMUM RATINGS. 125 V h 0.2 0.1 75 0 0.0001 0.001 0.01 0.1 1 25 10 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 10 1.4 - (Volts) 1.0 1.0 IC/IB=10 VCE=2V 0.8 V 0.8 0.6 0.6 0.4 0.0001 0.001 0.01 0.1 10 0.0001 0.001 0.01 VBE(sat) v IC VBE(on) v IC =25°C tf IB1=IB2=IC/10 ns DC 1s 100ms 10ms 1ms 300µs 1 10 ts ns 280 2800 240 2400 200 2000 160 1600 120 1200 80 800 1 0.1 10 td tr 0.01 1 IC - Collector Current (Amps) amb 0.1 0.1 IC - Collector Current (Amps) Single Pulse Test at T 10 1 100 ts SYMBOL VALUE UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A Continuous Collector Current IC 2 A Power Dissipation at Tamb =25°C Ptot Operating and Storage Temperature Range Tj:Tstg 40 400 0 0 0.01 PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL MIN. 120 V(BR)CBO 2 W -55 to +150 °C tr 0.1 IC - Collector Current (Amps) Safe Operating Area Switching Speeds 1 TYP. MAX. UNIT V CONDITIONS. IC=100µA V(BR)CEO 100 V IC=10mA* V(BR)EBO 5 V IE=100µA µA µA VBE(sat) 0.13 0.23 0.9 0.1 10 0.1 0.3 0.5 1.25 V V V VCB=100V VCB=100V,Tamb=100°C VEB=4V IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* VBE(on) 0.8 1.0 V IC=1A, VCE =2V* MHz IC=50mA, VCE =2V* IC=500mA, VCE =2V* IC=1A, VCE =2V* IC=2A, VCE =2V* IC=100mA, VCE =5V f=100MHz VCB=10V, f=1MHz IC=500mA, VCC =10V IB1=IB2=50mA ICBO Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio IEBO VCE(sat) Transition Frequency fT Output Capacitance Switching Times Cobo ton toff hFE tf td VCE - Collector Emitter Voltage (V) 3 - 210 PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.2 Switching time - (Volts) 1.2 V C IC/IB=10 - Gain - (Volts) 225 70 100 55 25 140 200 200 110 55 175 300 30 80 1200 µA pF ns ns *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 209