SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS FZT651 FZT651 ISSUE 2 FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 C 0.5 225 0.3 VCE=2V ABSOLUTE MAXIMUM RATINGS. V 75 0.0001 0.001 0.01 0.1 1 0 10 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 10 1.4 1.2 - (Volts) - (Volts) 1.0 IC/IB=10 VCE=2V 0.8 V 0.8 V 0.6 0.6 0.4 0.0001 0.001 0.01 0.1 10 0.0001 0.001 0.01 IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC amb =25°C tf ns Switching time 1 0.01 DC 1s 100ms 10ms 1ms 100µs 1 10 10 IB1=IB2=IC/10 ts ns 140 1400 120 1200 100 1000 80 800 60 600 40 400 20 200 0 0 0.01 0.1 1 td tr 0.1 0.1 IC - Collector Current (Amps) Single Pulse Test at T 10 1 ts td SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A Continuous Collector Current IC 3 A Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL MIN. V(BR)CBO 80 2 W -55 to +150 °C 0.1 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area Switching Speeds 1 TYP. MAX. UNIT V CONDITIONS. IC=100µA V(BR)CEO 60 V IC=10mA* V(BR)EBO 5 V IE=100µA µA µA µA VBE(sat) 0.12 0.43 0.9 0.1 10 0.1 0.3 0.6 1.25 V V V VCB=60V VCB=60V,Tamb=100°C VEB=4V IC=1A, IB=100mA* IC=3A, IB=300mA* IC=1A, IB=100mA* VBE(on) 0.8 1 V IC=1A, VCE =2V* ICBO Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio IEBO VCE(sat) hFE 70 100 80 40 200 200 170 80 Transition Frequency fT 140 175 MHz IC=100mA, VCE =5V f=100MHz Switching Times t on 45 ns t off 800 ns IC=500mA, VCC =10V IB1=IB2=50mA pF VCB =10V, f=1MHz tf tr 100 3 - 208 PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.2 1.0 B PARTMARKING DETAIL FZT651 125 0.1 0 C 175 h 0.2 E COMPLEMENTARY TYPE FZT751 IC/IB=10 - Gain - (Volts) 0.4 Output Capacitance Cobo IC=50mA, VCE =2V* IC=500mA, VCE =2V* IC=1A, VCE =2V* IC=2A, VCE =2V* 300 30 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 207 SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS FZT651 FZT651 ISSUE 2 FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 C 0.5 225 0.3 VCE=2V ABSOLUTE MAXIMUM RATINGS. V 75 0.0001 0.001 0.01 0.1 1 0 10 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 10 1.4 1.2 - (Volts) - (Volts) 1.0 IC/IB=10 VCE=2V 0.8 V 0.8 V 0.6 0.6 0.4 0.0001 0.001 0.01 0.1 10 0.0001 0.001 0.01 IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC amb =25°C tf ns Switching time 1 0.01 DC 1s 100ms 10ms 1ms 100µs 1 10 10 IB1=IB2=IC/10 ts ns 140 1400 120 1200 100 1000 80 800 60 600 40 400 20 200 0 0 0.01 0.1 1 td tr 0.1 0.1 IC - Collector Current (Amps) Single Pulse Test at T 10 1 ts td SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A Continuous Collector Current IC 3 A Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL MIN. V(BR)CBO 80 2 W -55 to +150 °C 0.1 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area Switching Speeds 1 TYP. MAX. UNIT V CONDITIONS. IC=100µA V(BR)CEO 60 V IC=10mA* V(BR)EBO 5 V IE=100µA µA µA µA VBE(sat) 0.12 0.43 0.9 0.1 10 0.1 0.3 0.6 1.25 V V V VCB=60V VCB=60V,Tamb=100°C VEB=4V IC=1A, IB=100mA* IC=3A, IB=300mA* IC=1A, IB=100mA* VBE(on) 0.8 1 V IC=1A, VCE =2V* ICBO Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio IEBO VCE(sat) hFE 70 100 80 40 200 200 170 80 Transition Frequency fT 140 175 MHz IC=100mA, VCE =5V f=100MHz Switching Times t on 45 ns t off 800 ns IC=500mA, VCC =10V IB1=IB2=50mA pF VCB =10V, f=1MHz tf tr 100 3 - 208 PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.2 1.0 B PARTMARKING DETAIL FZT651 125 0.1 0 C 175 h 0.2 E COMPLEMENTARY TYPE FZT751 IC/IB=10 - Gain - (Volts) 0.4 Output Capacitance Cobo IC=50mA, VCE =2V* IC=500mA, VCE =2V* IC=1A, VCE =2V* IC=2A, VCE =2V* 300 30 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 207