PHILIPS BFG520

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG520; BFG520/X; BFG520/XR
NPN 9 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES
BFG520; BFG520/X; BFG520/XR
PINNING
• High power gain
PIN
• Low noise figure
DESCRIPTION
fpage
4
3
2
BFG520 (Fig.1) Code: N36
• High transition frequency
1
collector
• Gold metallization ensures
excellent reliability.
2
base
1
3
emitter
Top view
4
emitter
DESCRIPTION
BFG520/X (Fig.1) Code: N42
NPN silicon planar epitaxial
transistors, intended for applications
in the RF frontend in the GHz range,
such as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, pagers and satellite TV
tuners (SATV) and repeater
amplifiers in fibre-optic systems.
1
collector
2
emitter
3
base
4
emitter
The transistors are encapsulated in
4-pin, dual-emitter plastic SOT143
and SOT143R envelopes.
MSB014
Fig.1 SOT143B.
handbook, 2 columns
3
4
BFG520/XR (Fig.2) Code: N48
1
collector
2
emitter
3
base
4
emitter
2
1
Top view
MSB035
Fig.2 SOT143R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
−
−
20
V
VCEO
collector-emitter voltage open base
−
−
15
V
Ic
DC collector current
−
−
70
mA
mW
open emitter
Ptot
total power dissipation
up to Ts = 88 °C; note 1
−
−
300
hFE
DC current gain
IC = 20 mA; VCE = 6 V; Tj = 25 °C
60
120
250
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
−
0.3
−
pF
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C
−
9
−
GHz
GUM
maximum unilateral
power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
−
19
−
dB
IC = 20 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 °C
−
13
−
dB
S212
insertion power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
17
18
−
dB
F
noise figure
Γs = Γopt ; Ic = 5 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
−
1.1
1.6
dB
Γs = Γopt ; IC = 20 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
−
1.6
2.1
dB
Γs = Γopt ; IC = 5 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 °C
−
1.9
−
dB
September 1995
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
DC collector current
−
70
mA
Ptot
total power dissipation
up to Ts = 88 °C; note 1
−
300
mW
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 88 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
3
THERMAL RESISTANCE
290 K/W
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
ICBO
collector cut-off current
IE = 0; VCB = 6 V
−
−
50
UNIT
nA
hFE
DC current gain
IC = 20 mA; VCE = 6 V
60
120
250
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
1
−
pF
Cc
collector capacitance
IE = ie = 0; VCB = 6 V; f = 1 MHz
−
0.6
−
pF
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
−
0.3
−
pF
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C
−
9
−
GHz
GUM
maximum unilateral
power gain (note 1)
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
−
19
−
dB
IC = 20 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 °C
−
13
−
dB
S212
insertion power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
17
18
−
dB
F
noise figure
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
−
1.1
1.6
dB
Γs = Γopt; IC = 20 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
−
1.6
2.1
dB
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 2 GHz; Tamb = 25 °C
−
1.9
−
dB
PL1
output power at 1 dB gain
compression
IC = 20 mA; VCE = 6 V; RL = 50 Ω;
f = 900 MHz; Tamb = 25 °C
−
17
−
dBm
ITO
third order intercept point
note 2
−
26
−
dBm
Vo
output voltage
note 3
−
275
−
mV
d2
second order intermodulation
distortion
IC = 20 mA; VCE = 6 V; Vo = 75 mV;
Tamb = 25 °C; f(p+q) = 810 MHz
−
−50
−
dB
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
- dB.
G UM = 10 log ------------------------------------------------------------2 
2

 1 – S 11   1 – S 22 
2. IC = 20 mA; VCE = 6 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz;
measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz.
3. dim = −60 dB (DIN 45004B);
Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz
September 1995
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
MRA670-1
400
MRA671
250
handbook, halfpage
handbook, halfpage
Ptot
(mW)
hFE
200
300
150
200
100
100
50
0
10−2
0
0
50
100
150
Ts (oC)
200
10−1
1
10
IC (mA)
102
VCE = 6 V; Tj = 25 °C.
Fig.4
Fig.3 Power derating curve.
MRA672
0.6
DC current gain as a function of collector
current.
MRA673
12
handbook, halfpage
handbook, halfpage
Cre
(pF)
fT
(GHz)
0.4
8
VCE = 6 V
VCE = 3 V
0.2
4
0
10−1
0
0
4
8
VCB (V)
12
Fig.6
Feedback capacitance as a function of
collector-base voltage.
September 1995
10
IC (mA)
102
f = 1 GHz; Tamb = 25 °C.
IC = 0; f = 1 MHz.
Fig.5
1
5
Transition frequency as a function of
collector current.
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
In Figs 7 to 10, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
Gmax
20
MSG
20
MRA675
25
MRA674
25
GUM
15
15
Gmax
MSG
GUM
10
10
5
5
0
0
0
0
10
20
IC (mA)
10
20
30
IC (mA)
30
VCE = 6 V; f = 900 MHz; Tamb = 25 °C.
VCE = 6 V; f = 2 GHz; Tamb = 25 °C.
Fig.7 Gain as a function of collector current.
Fig.8 Gain as a function of collector current.
MRA676
MRA677
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
GUM
40
40
GUM
MSG
30
30
MSG
20
20
Gmax
Gmax
10
0
10
102
103
f (MHz)
10
0
10
104
103
f (MHz)
104
IC = 20 mA; VCE = 6 V; Tamb = 25 °C.
IC = 5 mA; VCE = 6 V; Tamb = 25 °C.
Fig.9 Gain as a function of frequency.
September 1995
102
Fig.10 Gain as a function of frequency.
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
MEA975
−20
dim
MEA974
−20
d2
handbook, halfpage
handbook, halfpage
(dB)
−30
(dB)
−30
−40
−40
−50
−50
−60
−60
−70
10
0
20
30
40
−70
50
IC (mA)
Fig.11 Intermodulation distortion as a function of
collector current.
MRA682
5
handbook, halfpage
Fmin
f = 900 MHz
(dB)
4
1000 MHz
10
0
20
30
40
50
IC (mA)
Fig.12 Second order intermodulation distortion as
a function of collector current.
MRA683
20
Gass
handbook, halfpage
(dB)
15
(dB)
4
5
Fmin
IC = 5 mA
20 mA
20
Gass
(dB)
15
Gass
Gass
2000 MHz
3
10
3
10
5
2
5
2000 MHz
2
1000 MHz
1
Fmin
20 mA
0
900 MHz
1
Fmin
0
5 mA
500 MHz
0
1
10
IC (mA)
−5
102
0
102
V CE = 6 V; Tamb = 25 °C.
f (MHz)
−5
104
VCE = 6 V; Tamb = 25 °C.
Fig.13 Minimum noise figure and associated
available gain as functions of collector
current.
September 1995
103
Fig.14 Minimum noise figure and associated
available gain as functions of frequency.
7
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
handbook, full pagewidth
BFG520; BFG520/X; BFG520/XR
stability
circle
90°
1.0
1
135°
0.8
45°
2
0.5
pot. unst.
region
0.6
Fmin = 1. 1 dB
0.2
0.4
5
ΓOPT
180°
0.2
0
0.5
1
0.2
2
5
0°
F = 1.5 dB
0
F = 2 dB
5
0.2
F = 3 dB
0.5
−135°
2
−45°
1
MRA684
1.0
−90°
IC = 5 mA; VCE = 6 V;
f = 900 MHz; Zo = 50 Ω.
Fig.15 Noise circle figure.
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
F = 3 dB
F = 2.5 dB
F = 2 dB
ΓOPT
0.2
Gmax = 13 dB
180°
0
0.4
5
0.2
Fmin = 1. 9 dB
ΓMS 0.2
0.5
1
2
5
0°
0
G = 12 dB
0.2
G = 11 dB
5
G = 10 dB
−135°
0.5
2
−45°
1
MRA685
−90°
IC = 5 mA; VCE = 6 V;
f = 2 GHz; Zo = 50 Ω.
Fig.16 Noise circle figure.
September 1995
8
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
3 GHz
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
0°
0
40 MHz
5
0.2
0.5
−135°
2
−45°
1
MRA678
−90°
IC = 20 mA; VCE = 6 V.
Zo = 50 Ω.
Fig.17 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
135°
45°
40 MHz
3 GHz
180°
50
40
30
20
0°
10
−135°
−45°
−90°
MRA679
IC = 20 mA; VCE = 6 V.
Fig.18 Common emitter forward transmission coefficient (S21).
September 1995
9
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
0.25
0.20
0.15
0.10
0°
0.05
−135°
−45°
−90°
MRA680
IC = 20 mA; VCE = 6 V.
Fig.19 Common emitter reverse transmission coefficient (S12).
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
0°
0
40 MHz
3 GHz
0.2
−135°
0.5
5
2
−45°
1
MRA681
−90°
IC = 20 mA; VCE = 6 V.
Zo = 50 Ω.
Fig.20 Common emitter output reflection coefficient (S22).
September 1995
10
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT143B
September 1995
EUROPEAN
PROJECTION
11
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
Plastic surface mounted package; reverse pinning; 4 leads
D
SOT143R
B
E
A
X
y
HE
v M A
e
bp
w M B
3
4
Q
A
A1
c
2
1
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.55
0.25
0.45
0.25
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-03-10
SOT143R
September 1995
EUROPEAN
PROJECTION
12
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
13