DISCRETE SEMICONDUCTORS DATA SHEET BFQ68 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ68 PINNING NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. It features very high output voltage capabilities. PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter 4 fpage 1 3 2 Top view It is primarily intended for final stages in MATV system amplifiers, and is also suitable for use in low power band IV and V equipment. MBK187 Fig.1 SOT122A. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT open base − 18 V − 300 mA total power dissipation up to Tc = 110 °C − 4.5 W fT transition frequency IC = 240 mA; VCE = 15 V; f = 500 MHz; Tj = 25 °C 4 − GHz Vo output voltage Ic = 240 mA; VCE = 15 V; dim = −60 dB; RL = 75 Ω; f(p+q−r) = 793.25 MHz; Tamb = 25 °C 1.6 − V PL1 output power at 1 dB gain compression Ic = 240 mA; VCE = 15 V; RL = 75 Ω; f = 800 MHz; Tamb = 25 °C 28 − dBm ITO third order intercept point Ic = 240 mA; VCE = 15 V; RL = 75 Ω; f = 800 MHz; Tamb = 25 °C 47 − dBm VCEO collector-emitter voltage IC collector current Ptot WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. September 1995 2 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ68 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 18 V VEBO emitter-base voltage open collector − 2 V IC DC collector current − 300 mA Ptot total power dissipation − 4.5 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C up to Tc = 110 °C THERMAL RESISTANCE SYMBOL Rth j-c September 1995 PARAMETER THERMAL RESISTANCE thermal resistance from junction to case 3 20 K/W Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ68 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IE = 0; VCB = 15 V MIN. TYP. MAX. UNIT − − 50 µA ICBO collector cut-off current hFE DC current gain IC = 240 mA; VCE = 15 V 25 75 − fT transition frequency IC = 240 mA; VCE = 15 V; f = 500 MHz − 4 − GHz Cc collector capacitance IE = ie = 0; VCB = 15 V; f = 1 MHz − 3.8 − pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 20 − pF Cre feedback capacitance IC = 0; VCE = 15 V; f = 1 MHz − 2.3 − pF Ccs collector-stud capacitance note 1 − 0.8 − pF GUM maximum unilateral power gain (note 2) IC = 240 mA; VCE = 15 V; f = 800 MHz; Tamb = 25 °C − 13 − dB Vo output voltage note 3 − 1.6 − V PL1 output power at 1 dB gain compression (see Fig.2) IC = 240 mA; VCE = 15 V; RL = 75 Ω; Tamb = 25 °C; measured at f = 800 MHz − 28 − dBm ITO third order intercept point (see Fig.2) note 4 − 47 − dBm Notes 1. Measured with emitter and base grounded. 2. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 - dB. G UM = 10 log ------------------------------------------------------------2 2 1 – S 1 – S 11 22 3. dim = −60 dB (see Figs 2 and 7) (DIN 45004B); IC = 240 mA; VCE = 15 V; RL = 75 Ω; Tamb = 25 °C; Vp = Vo at dim = −60 dB; fp = 795.25 MHz; Vq = Vo −6 dB; fq = 803.25 MHz; Vr = Vo −6 dB; fr = 805.25 MHz; measured at f(p+q−r) = 793.25 MHz. 4. IC = 240 mA; VCE = 15 V; RL = 75 Ω; Tamb = 25 °C; Pp = ITO − 6 dB; fp = 800 MHz; Pq = ITO − 6 dB; fq = 801 MHz; measured at f(2q−p) = 802 MHz and at f(2p−q) = 799 MHz. September 1995 4 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ68 2.2 nF handbook, full pagewidth 2.2 nF VCC VBB L2 2.2 kΩ 2.2 nF 2.2 nF L1 2.2 nF 75 Ω 4.7 Ω 75 Ω 180 Ω DUT 1.2 pF 1.2 pF 24 Ω 1.8 pF 24 Ω 0.68 pF MEA273 f = 40 to 860 MHz. L1 = L2 = 5 µH Ferroxcube choke. Fig.2 Intermodulation distortion MATV test circuit. MEA272 MBB361 6 handbook, halfpage 120 handbook, halfpage fT (GHz) h FE 80 4 40 2 0 0 0 40 80 120 160 I C (mA) 10 10 2 VCE = 10 V; Tj = 25 °C. VCE = 15 V; f = 500 MHz; Tj = 25 °C Fig.3 Fig.4 DC current gain as a function of collector current. September 1995 5 I C (mA) 103 Transition frequency as a function of collector current. Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ68 MEA270 MEA271 40 6 handbook, halfpage handbook, halfpage gain (dB) Cc (pF) 30 4 20 2 10 G UM Is 12 I 0 0 10 0 0.1 20 VCB (V) Collector capacitance as a function of collector-base voltage. MEA269 20 d im (dB) 30 40 50 60 70 100 200 I C (mA) 300 VCE = 15 V; Vo = 1.6 V; f(p+q−r) = 793.25 MHz. Fig.7 Intermodulation distortion as a function of collector current. September 1995 10 Fig.6 Gain as a function of frequency. handbook, halfpage 0 f (GHz) IC = 240 mA; VCE = 15 V; Tamb = 25 °C IE = ie = 0; f = 1 MHz Fig.5 1 2 6 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ68 1 handbook, full pagewidth 0.5 2 1200 MHz 0.2 1000 800 5 10 500 +j 0 0.2 0.5 1 2 5 10 ∞ 200 –j 10 100 40 0.2 5 2 0.5 MEA274 1 IC = 240 mA; VCE = 15 V; Tamb = 25 °C. Zo = 50 Ω. Fig.8 Common emitter input reflection coefficient (S11). 90° handbook, full pagewidth 120° 60° 1200 MHz 1000 150° 30° 800 500 100 40 180° +ϕ 200 0.05 0.1 0° −ϕ 30° 150° 60° 120° IC = 240 mA; VCE = 15 V; Tamb = 25 °C. 0.15 90° MEA275 Fig.9 Common emitter forward transmission coefficient (S21). September 1995 7 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ68 40 handbook, full pagewidth 90° 120° 60° 100 150° 30° 200 500 800 1000 1200 MHz 0.05 180° ϕ 0.1 0.15 0° ϕ 30° 150° 60° 120° MEA277 90° IC = 240 mA; VCE = 15 V; Tamb = 25 °C. Fig.10 Common emitter reverse transmission coefficient (S12). 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 –j 0.2 0.5 1200 1000 800 500 1 200 2 5 10 ∞ 10 100 5 0.2 40 MHz 2 0.5 IC = 240 mA; VCE = 15 V; Tamb = 25 °C. Zo = 50 Ω. 1 MEA276 Fig.11 Common emitter output reflection coefficient (S22). September 1995 8 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ68 PACKAGE OUTLINE Studded ceramic package; 4 leads SOT122A D A ceramic BeO metal Q c N1 A D1 w1 M A D2 N M W N3 M1 X detail X H b α 4 L 3 H 1 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 D2 H L M1 M N N1 max. N3 Q W w1 α mm 5.97 4.74 5.85 5.58 0.18 0.14 7.50 7.23 6.48 6.22 7.24 6.93 27.56 25.78 9.91 9.14 3.18 2.66 1.66 1.39 11.82 11.04 1.02 3.86 2.92 3.38 2.74 8-32 UNC 0.381 90° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-04-18 SOT122A September 1995 EUROPEAN PROJECTION 9 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ68 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 10