DISCRETE SEMICONDUCTORS DATA SHEET BFR520 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. The transistor is encapsulated in a plastic SOT23 envelope. 3 fpage PINNING 1 DESCRIPTION PIN The BFR520 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless DESCRIPTION 2 Top view MSB003 Code: N28 1 base 2 emitter 3 collector Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT − − 20 V RBE = 0 − − 15 V VCBO collector-base voltage VCES collector-emitter voltage IC DC collector current − − 70 mA Ptot total power dissipation up to Ts = 97 °C; note 1 − − 300 mW hFE DC current gain IC = 20 mA; VCE = 6 V 60 120 250 Cre feedback capacitance IC = ic = 0; VCB = 6 V; f = 1 MHz − 0.4 − fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz − 9 − GHz GUM maximum unilateral power gain IC = 20 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz − 15 − dB IC = 20 mA; VCE = 6 V; Tamb = 25 °C; f = 2 GHz − 9 − dB pF S212 insertion power gain IC = 20 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz 13 14 − dB F noise figure Γs = Γopt; IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz − 1.1 1.6 dB Γs = Γopt; IC = 20 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz − 1.6 2.1 dB Γs = Γopt; IC = 5 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz − 1.9 − dB Note 1. Ts is the temperature at the soldering point of the collector tab. September 1995 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage RBE = 0 − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 70 mA Ptot total power dissipation − 300 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C up to Ts = 97 °C; note 1 THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER from junction to soldering point (note 1) Note 1. Ts is the temperature at the soldering point of the collector tab. September 1995 3 THERMAL RESISTANCE 260 K/W Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 6 V − − 50 hFE DC current gain IC = 20 mA; VCE = 6 V 60 120 250 Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 1 − pF Cc collector capacitance IE = ie = 0; VCB = 6 V; f = 1 MHz − 0.5 − pF Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz − 0.4 − pF fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz − 9 − GHz GUM maximum unilateral power gain (note 1) IC = 20 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz − 15 − dB IC = 20 mA; VCE = 6 V; Tamb = 25 °C; f = 2 GHz − 9 − dB nA S212 insertion power gain IC = 20 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz 13 14 − dB F noise figure Γs = Γopt; IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz − 1.1 1.6 dB Γs = Γopt; IC = 20 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz − 1.6 2.1 dB Γs = Γopt; IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 2 GHz − 1.9 − dB PL1 output power at 1 dB gain compression IC = 20 mA; VCE = 6 V; RL = 50 Ω; Tamb = 25 °C; f = 900 MHz − 17 − dBm ITO third order intercept point note 2 − 26 − dBm Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 - dB. G UM = 10 log ------------------------------------------------------------2 2 1 S 1 – S – 11 22 2. IC = 20 mA; VCE = 6 V; RL = 50 Ω; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz. September 1995 4 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 MRA703 MRA702 - 1 250 400 handbook, halfpage handbook, halfpage P tot (mW) hFE 200 300 150 200 100 100 50 0 10−2 0 0 50 100 150 200 10−1 10 I (mA) 102 C 1 T ( o C) s VCE = 6 V. Fig.3 Fig.2 Power derating curve. MRA705 MRA704 0.6 DC current gain as a function of collector current. 12 handbook, halfpage handbook, halfpage Cre (pF) fT (GHz) VCE = 6V 8 0.4 VCE = 3V 4 0.2 0 0 4 8 VCB (V) 0 10−1 12 Fig.5 Feedback capacitance as a function of collector-base voltage. September 1995 10 IC (mA) 102 Tamb = 25 °C; f = 1 GHz. iC = 0; f = 1 MHz. Fig.4 1 5 Transition frequency as a function of collector current. Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 MRA706 MRA707 25 25 handbook, gain halfpage (dB) gain (dB) 20 20 MSG Gmax 15 15 GUM Gmax 10 10 GUM 5 5 0 0 0 10 20 IC (mA) 30 VCE = 6 V; f = 900 MHz. 0 10 20 IC (mA) 30 VCE = 6 V; f = 2 GHz. Fig.6 Gain as a function of collector current. Fig.7 Gain as a function of collector current. MRA708 50 MRA709 50 handbook, halfpage handbook, halfpage gain (dB) gain (dB) 40 40 GUM GUM 30 30 MSG MSG 20 20 Gmax Gmax 10 0 10 102 103 f (MHz) 10 0 10 104 VCE = 6 V; Ic = 5 mA. 103 f (MHz) 104 VCE = 6 V; Ic = 20 mA. Fig.8 Gain as a function of frequency. September 1995 102 Fig.9 Gain as a function of frequency. 6 Philips Semiconductors Product specification NPN 9 GHz wideband transistor MRA714 5 handbook, halfpage Fmin (dB) 4 f = 900 MHz BFR520 MRA715 20 Gass handbook, halfpage (dB) 15 (dB) 4 5 Fmin IC = 5 mA 20 mA 20 Gass (dB) 15 Gass 1000 MHz Gass 3 10 3 10 5 2 5 0 1 2000 MHz 2 2000 MHz 1000 MHz 1 Fmin 20 mA 900 MHz Fmin 0 5 mA 500 MHz −5 102 0 1 10 IC (mA) 0 102 VCE = 6 V. 103 VCE = 6 V. Fig.10 Minimum noise figure and associated available gain as functions of collector current. Fig.11 Minimum noise figure and associated available gain as functions of frequency. stability circle handbook, full pagewidth 90° 1.0 1 135° 0.8 45° 2 0.5 pot. unst. region 0.6 Fmin = 1. 1 dB 0.2 0.4 5 ΓOPT 180° 0.2 0 0.5 1 0.2 2 5 0° 0 F = 1.5 dB F = 2 dB 5 0.2 F = 3 dB −135° 0.5 2 −45° 1 MRA716 Zo = 50 Ω. VCE = 6 V; IC = 5 mA; f = 900 MHz. −90° Fig.12 Noise circle figure. September 1995 f (MHz) −5 104 7 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 F = 3 dB F = 2.5 dB F = 2 dB Fmin = 1. 9 dB 0.2 ΓMS 180° 0.5 0 Gmax = 9.3 dB ΓOPT 1 0.4 5 0.2 2 5 0° 0 G = 9 dB 5 0.2 G = 8 dB G = 7 dB −135° 0.5 2 −45° 1 MRA717 −90° Zo = 50 Ω. VCE = 6 V; IC = 5 mA; f = 2000 MHz. Fig.13 Noise circle figure. September 1995 8 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 3 GHz 180° 0.2 0 0.5 1 2 5 0° 0 40 MHz 5 0.2 0.5 −135° 2 −45° 1 MRA710 −90° VCE = 6 V; IC = 20 mA. Zo = 50 Ω. Fig.14 Common emitter input reflection coefficient (S11). 90° handbook, full pagewidth 135° 45° 40 MHz 3 GHz 180° 50 40 30 20 0° 10 −135° −45° −90° MRA711 VCE = 6 V; IC = 20 mA. Fig.15 Common emitter forward transmission coefficient (S21). September 1995 9 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 90° handbook, full pagewidth 135° 45° 3 GHz 40 MHz 180° 0.5 0.4 0.3 0.2 0° 0.1 −135° −45° −90° MRA712 VCE = 6 V; IC = 20 mA. Fig.16 Common emitter reverse transmission coefficient (S12). 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 0° 0 40 MHz 3 GHz 5 0.2 −135° 0.5 2 −45° 1 MRA713 −90° VCE = 6 V; IC = 20 mA. Zo = 50 Ω. Fig.17 Common emitter output reflection coefficient (S22). September 1995 10 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 September 1995 EUROPEAN PROJECTION 11 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 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