SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR FCX688B ISSSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * 10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage Complimentary Type Partmarking Detail - C E FCX789A 688 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 12 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ** ICM 10 A Continuous Collector Current IC 3 A Power Dissipation at Tamb=25°C Ptot 1 † 2 ‡ W W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. FCX688B ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage Min Typ Max UNIT CONDITIONS. 12 V IC=100µA V(BR)CEO 12 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µA Collector Cut-Off Current ICBO 0.1 µA VCB=9V Emitter Cut-Off Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 40 60 180 350 400 mV mV mV mV mV IC=0.1A, IB=1mA * IC=0.1A, IB=0.5mA * IC=1A, IB=10mA * IC=3A, IB=10mA * IC=4A, IB=50mA * Base-Emitter Saturation Voltage VBE(sat) 1.1 V Base-Emitter Turn-On Voltage VBE(on) 1.0 V Static Forward Current Transfer Ratio hFE 500 400 100 Transition Frequency fT 150 Input Capacitance Cibo Output Capacitance Switching Times IC=3A, IB=20mA * IC=3A, VCE=2V * IC=100mA, VCE=2V* IC=3A, VCE=2V* IC=10A, VCE=2V* MHz IC=50mA, VCE=5V f=50MHz 200 pF VEB=0.5V, f=1MHz Cobo 40 pF VCB=10V, f=1MHz ton toff 40 500 ns ns IC=500mA, IB1=IB2=50mA VCC=10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% FCX688B TYPICAL CHARACTERISTICS 0.8 Tamb=25°C IC/IB=200 IC/IB=100 IC/IB=10 0.6 0.4 0.2 0.2 0 0.01 0.1 1 10 0 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC +100°C +25°C -55°C 1.4 IC/IB=100 0.6 0.4 1.6 -55°C +25°C +100°C +175°C 0.8 -55°C +25°C +100°C +175°C VCE=2V 1.5K 1.6 1.4 1.2 IC/IB=100 1.2 1.0 1K 1.0 0.8 0.8 0.6 500 0.4 0.6 0.4 0.2 0.2 0 0 0.01 0.1 10 1 0 1.6 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 10 10 -55°C +25°C +100°C +175°C VCE=2V 1.4 1 1.2 1.0 0.8 0.1 0.6 DC 1s 100ms 10ms 1ms 100us 0.4 0.2 0 0 0.01 0.1 1 IC - Collector Current (Amps) VBE(on) v IC 10 0.01 100m 1 10 VCE - Collector Voltage (Volts) Safe Operating Area 100