SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR FCX789A ISSSUE 1 -NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * 8A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Low Saturation Voltage E.g. 10mv Typ. Complimentary Type Partmarking Detail - C FCX688B 789 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO -25 V VCEO -25 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ** ICM -8 A Continuous Collector Current IC -3 A Power Dissipation at Tamb=25°C Ptot 1 † 2 ‡ W W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices Refer to the handling instructions when soldering surface mount components. FCX789A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -25 TYP. MAX. V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -25 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -0.1 µA VCB=-15V Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -190 -400 -320 mV mV mV IC=-1A, IB=-10mA* IC=-2A, IB=-20mA* IC=-3A, IB=-100mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-1A, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE 300 230 180 75 Transition Frequency fT 100 -0.8 800 IC=-10mA, VCE=-2V IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* MHz IC=-50mA, VCE=-5V f=50MHz Input Capacitance Cibo 225 pF VEB=-0.5V, f=1MHz Output Capacitance Cobo 25 pF VCB=-10V, f=1MHz Switching Times ton toff 35 400 ns ns IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% FCX789A TYPICAL CHARACTERISTICS 1.8 1.6 1.8 IC/IB=100 IC/IB=40 IC/IB=10 Tamb=25°C 1.6 1.4 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 IC/IB=100 0.2 0.2 0 0 0.01 0.1 1 1.4 10 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC +100°C +25°C -55°C 1.6 VCE=2V 1.6 750 1.2 1.4 -55°C +25°C +100°C +175°C IC/IB=100 1.2 1.0 500 0.8 1.0 0.8 0.6 250 0.4 0.6 0.4 0.2 0 -55°C +25°C +100°C +175°C 0.2 0 0.01 0.1 10 1 0 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 10 10 1.6 -55°C +25°C +100°C VCE=2V 1.4 1 1.2 1.0 0.8 0.6 0.1 0.4 DC 1s 100ms 10ms 1ms 100us 0.2 0 0 0.01 0.1 1 IC - Collector Current (Amps) VBE(on) v IC 10 0.01 100m 1 10 VCE - Collector Voltage (Volts) Safe Operating Area 100