TFDU6102 Vishay Semiconductors Fast Infrared Transceiver Module (FIR, 4 Mbit/s) for 2.7 V to 5.5 V Operation Description The TFDU6102 is a low-power infrared transceiver module compliant to the latest IrDA physical layer standard for fast infrared data communication, supporting IrDA speeds up to 4.0 Mbit/s (FIR), and carrier based remote control modes up to 2 MHz. Integrated within the transceiver module are a PIN photodiode, an infrared emitter (IRED), and a low-power CMOS control IC to provide a total front-end solution in a single package. Vishay FIR transceivers are available in different package options, including this BabyFace package (TFDU6102). This wide selection provides flexibility for a variety of applications and space constraints. The transceivers are capable of directly interfacing with a wide variety of I/O devices which perform the 18102 modulation/ demodulation function, including National Semiconductor’s PC87338, PC87108 and PC87109, SMC’s FDC37C669, FDC37N769 and CAM35C44, and Hitachi’s SH3. TFDU6102 has a tristate output and is floating in shut-down mode with a weak pull-up. Features • Supply voltage 2.7 V to 5.5 V, operating idle current (receive mode) < 3 mA, shutdown current < 5 µA over full e3 temperature range • Surface mount package, top and side view, 9.7 mm x 4.7 mm x 4.0 mm • Operating temperature - 25 °C to 85 °C • Storage temperature - 40 °C to 100 °C • Transmitter wavelength typ. 886 nm, supporting IrDA® and Remote Control • IrDA® compliant, link distance > 1 m, ± 15 °, window losses are allowed to still be inside the IrDA® spec. • Remote Control range > 8 m, typ. 22 m • ESD > 4000 V (HBM), latchup > 200 mA • EMI immunity > 550 V/m for GSM frequency and other mobile telephone bands / (700 MHz to 2000 MHz, no external shield) • Split power supply, LED can be driven by a separate power supply not loading the regulated supply. U.S. Pat. No. 6,157,476 • Tri-state-Receiver Output, floating in shut down with a weak pull-up • Eye safety class 1 (IEC60825-1, ed. 2001), limited LED on-time, LED current is controlled, no single fault to be considered • Lead (Pb)-free device • Device in accordance to RoHS 2002/95/EC and WEEE 2002/96EC Applications • Notebook computers, desktop PCs, Palmtop computers (Win CE, Palm PC), PDAs • Digital still and video cameras • Printers, fax machines, photocopiers, screen projectors • Telecommunication products (cellular phones, pagers) • Internet TV Boxes, video conferencing systems • External infrared adapters (dongles) • Medical an industrial data collection Document Number 82550 Rev. 1.6, 05-Dec-05 www.vishay.com 1 TFDU6102 Vishay Semiconductors Parts Table Part Description Qty / Reel TFDU6102-TR3 Oriented in carrier tape for side view surface mounting 1000 pcs TFDU6102-TT3 Oriented in carrier tape for top view surface mounting 1000 pcs Functional Block Diagram Vcc1 Tri-State Driver Amplifier RXD Comparator Vcc2 Logic & SD Controlled Driver Control TXD IRED C 18468 GND Pinout Definitions: TFDU6102 weight 200 mg In the Vishay transceiver data sheets the following nomenclature is used for defining the IrDA operating modes: SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhy 1.0 "U" Option BabyFace (Universal) MIR: 576 kbit/s to 1152 kbit/s FIR: 4 Mbit/s VFIR: 16 Mbit/s IRED Detector MIR and FIR were implemented with IrPhy 1.1, followed by IrPhy 1.2, adding the SIR Low Power Standard. IrPhy 1.3 extended the Low Power Option to MIR and FIR and VFIR was added with IrPhy 1.4.A new version of the standard in any case obsoletes the former version. 1 17087 2 3 4 5 6 7 8 Note: We apologize to use sometimes in our documentation the abbreviation LED and the word Light Emitting Diode instead of Infrared Emitting Diode (IRED) for IR-emitters. That is by definition wrong; we are here following just a bad trend. Typical values are for design aid only, not guaranteed nor subject to production testing and may vary with time. www.vishay.com 2 Document Number 82550 Rev. 1.6, 05-Dec-05 TFDU6102 Vishay Semiconductors Pin Description Pin Number "U" Function Description I/O Active 1 VCC2 IRED Anode Connect IRED anode directly to VCC2. For voltages higher than 3.6 V an external resistor might be necessary for reducing the internal power dissipation. An unregulated separate power supply can be used at this pin. 2 IRED Cathode IRED cathode, internally connected to driver transistor 3 TXD This input is used to transmit serial data when SD is low. An on-chip protection circuit disables the LED driver if the TXD pin is asserted for longer than 80 µs. When used in conjunction with the SD pin, this pin is also used to receiver speed mode. I HIGH 4 RXD Received Data Output, push-pull CMOS driver output capable of driving a standard CMOS or TTL load. No external pull-up or pull-down resistor is required. Floating with a weak pull-up of 500 kΩ (typ.) in shutdown mode. O LOW 5 SD Shutdown, also used for dynamic mode switching. Setting this pin active places the module into shutdown mode. On the falling edge of this signal, the state of the TXD pin is sampled and used to set receiver low bandwidth (TXD = Low, SIR) or high bandwidth (TXD = High, MIR and FIR) mode. Will be overwritten by the mode pin input, which must float, when dynamic programming is used. I HIGH 6 VCC1 Supply Voltage 7 Mode HIGH: High speed mode, MIR and FIR; LOW: Low speed mode, SIR only (see chapter "Mode Switching"). Must float, when dynamic programming is used. I Mode The mode pin can also be used to indicate the dynamically programmed mode. The maximum load is limited to 50 pF. High indicates FIR/MIR-, low indicates SIR-mode O GND Ground 8 Document Number 82550 Rev. 1.6, 05-Dec-05 www.vishay.com 3 TFDU6102 Vishay Semiconductors Absolute Maximum Ratings Reference point Ground Pin 8, unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Symbol Min Max Unit Supply voltage range, transceiver Parameter 0 V < VCC2 < 6 V Test Conditions VCC1 - 0.5 Typ. +6 V Supply voltage range, transmitter 0 V < VCC1 < 6 V VCC2 - 0.5 + 6.5 V Input currents for all pins, except IRED anode pin 10 mA Output sinking current Power dissipation see derating curve, figure 5 Junction temperature TJ Ambient temperature range (operating) Storage temperature range Soldering temperature < 90 µs, ton < 20 % IRED anode voltage mA mW 125 °C - 25 + 85 °C Tstg - 25 + 85 °C 260 °C IIRED (DC) 125 mA IIRED (RP) 600 mA + 6.5 V VIREDA Voltage at all inputs and outputs Vin > VCC1 is allowed 25 500 Tamb see recommended solder profile (see figure 4) Average output current Repetitive pulse output current PD - 0.5 VIN Load at mode pin when used as mode indicator 5.5 V 50 pF Max Unit Eye safety information Reference point Pin: GND unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Symbol Min Typ. Virtual source size Parameter Method: (1 - 1/e) encircled energy Test Conditions d 2.5 2.8 Maximum Intensity for Class 1 IEC60825-1 or EN60825-1, edition Jan. 2001 Ie mm *) (500)**) mW/sr *) Due to the internal limitation measures the device is a "class1" device **) IrDA specifies the max. intensity with 500 mW/sr www.vishay.com 4 Document Number 82550 Rev. 1.6, 05-Dec-05 TFDU6102 Vishay Semiconductors Electrical Characteristics Transceiver Tamb = 25 °C, VCC = 2.7 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter Test Conditions Supply voltage Symbol Min VCC 2.7 Typ. Max Unit 5.5 V SD = Low, Ee = 0 klx ICC 2 3 mA Supply current (Idle)1) SD = Low, Ee = 1 klx2) ICC 2 3 mA Shutdown supply current SD = High, Mode = Floating Ee = 0 klx ISD 2.0 µA SD = High, Mode = Floating ISD 2.5 µA SD = High, T = 85 °C, Mode = Floating, not ambient light sensitive ISD 5 µA + 85 °C Output voltage low IOL = 1 mA, Cload = 15 pF VOL 0.4 V Output voltage high IOH = 500 μA, Cload = 15 pF VOH 0.8 x VCC V IOH = 250 μA, Cload = 15 pF VOH 0.9 x VCC V Supply current (Idle) 1) Ee = 1 klx2) Operating temperature range TA - 25 Output RXD current limitation high state Short to Ground 20 mA Output RXD current limitation low state Short to VCC1 20 mA RXD to VCC1 impedance SD = High RRXD 400 600 kΩ VIL - 0.5 0.5 V CMOS level 3) VIH VCC - 0.5 VCC + 0.5 V TTL level, VCC1 = 4.5 V Input voltage low (TXD, SD, Mode) Input voltage high (TXD, SD, Mode) 500 VIH 2.4 Input leakage current (TXD, SD) IL - 10 + 10 µA V Input leakage current Mode IICH -2 +2 µA Input capacitance (TXD, SD, Mode) CIN 5 pF 1) Receive mode only. In transmit mode, add additional 85 mA (typ) for IRED current. Add RXD output current depending on RXD load. 2) Standard Illuminant A 3) The typical threshold level is between 0.5 x VCC2 (VCC = 3 V) and 0.4 x VCC (VCC = 5.5 V) . It is recommended to use the specified min/ max values to avoid increased operating current. Document Number 82550 Rev. 1.6, 05-Dec-05 www.vishay.com 5 TFDU6102 Vishay Semiconductors Optoelectronic Characteristics Receiver Tamb = 25 °C, VCC = 2.7 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter Test Conditions Symbol Min Typ. Max Unit 25 (2.5) 35 (3.5) mW/m2 Minimum irradiance Ee in angular range **) SIR mode 9.6 kbit/s to 115.2 kbit/s λ = 850 nm to 900 nm Ee Minimum irradiance Ee in angular range, MIR mode 1.152 Mbit/s λ = 850 nm to 900 nm Ee Minimum irradiance Ee inangular range, FIR mode 4.0 Mbit/s λ = 850 nm to 900 nm Ee Maximum irradiance Ee in angular range ***) λ = 850 nm to 900 nm Ee Maximum no detection irradiance *) Rise time of output signal 10 % to 90 %, 15 pF tr (RXD) 10 Fall time of output signal 90 % to 10 %, 15 pF tf (RXD) 10 RXD pulse width of output signal, 50 %, SIR mode input pulse length 1.4 μs < PWopt < 25 μs tPW input pulse length 1.4 μs < PWopt < 25 µs, tPW 1.5 1.8 2.6 µs 250 270 ns Ee 65 (6.5) 80 (8.0) (µW/cm2) mW/m2 (µW/cm2) 90 (9.0) 5 (500) mW/m2 (µW/cm2) kW/m2 (mW/cm2) 4 (0.4) mW/m2 (µW/cm2) 40 40 2.1 ns ns µs - 25 °C < T < 85 °C ****) RXD pulse width of output signal, 50 %, MIR mode input pulse length PWopt = 217 ns, 1.152 Mbit/s tPW 110 RXD pulse width of output signal, 50 %, FIR mode input pulse length PWopt = 125 ns, 4.0 Mbit/s tPW 100 140 ns input pulse length PWopt = 250 ns, 4.0 Mbit/s tPW 225 275 ns www.vishay.com 6 Document Number 82550 Rev. 1.6, 05-Dec-05 TFDU6102 Vishay Semiconductors Receiver continued Tamb = 25 °C, VCC = 2.7 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Stochastic jitter, leading edge Receiver start up time input irradiance = 100 mW/m2, 4.0 Mbit/s 20 ns input irradiance = 100 mW/m2, 1.152 Mbit/s 40 ns input irradiance = 100 mW/m2, 576 kbit/s 80 ns input irradiance = 100 mW/m2, ≤ 115.2 kbit/s after completion of shutdown programming sequence Power on delay 350 ns 500 µs 300 µs Latency tL 170 Note: All timing data measured with 4 Mbit/s are measured using the IrDA® FIR transmission header. The data given here are valid 5 µs after starting the preamble. *) This parameter reflects the backlight test of the IrDA physical layer specification to guarantee immunity against light from fluorescent lamps **) IrDA sensitivity definition: Minimum Irradiance Ee In Angular Range, power per unit area. The receiver must meet the BER specification while the source is operating at the minimum intensity in angular range into the minimum half-angle range at the maximum Link Length ***) Maximum Irradiance Ee In Angular Range, power per unit area. The optical delivered to the detector by a source operating at the maximum intensity in angular range at Minimum Link Length must not cause receiver overdrive distortion and possible related link errors. If placed at the Active Output Interface reference plane of the transmitter, the receiver must meet its bit error ratio (BER). For more definitions see the document “Symbols and Terminology” on the Vishay Website (http://www.vishay.com/docs/82512/82512.pdf). ****) Retriggering once during applied optical pulse may occur Document Number 82550 Rev. 1.6, 05-Dec-05 www.vishay.com 7 TFDU6102 Vishay Semiconductors Transmitter Tamb = 25 °C, VCC = 2.7 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter IRED operating current, switched current limiter Test Conditions See derating curve (fig. 5). For 3.3 V operations no external resistor needed. For 5 V application that might be necessary depending on operating temperature range. Output leakage IRED current Symbol Min Typ. Max Unit ID 500 550 600 mA 1 µA 170 350 mW/sr 0.04 mW/sr IIRED -1 Output radiant intensity recommended application circuit α = 0 °, 15 ° TXD = High, SD = Low, VCC1 = VCC2 = 3.3 V Internally current-controlled, no external resistor Ie 120 Output radiant intensity VCC1 = 5.0 V, α = 0 °, 15 ° TXD = Low or SD = High, (Receiver is inactive as long as SD = High) Ie Output radiant intensity, angle of half intensity α Peak - emission wavelength λp 880 Δλ Spectral bandwidth ° 900 40 tropt, tfopt 10 input pulse width 217 ns, 1.152 Mbit/s topt 207 input pulse width 125 ns, 4.0 Mbit/s topt input pulse width 250 ns, 4.0 Mbit/s topt input pulse width topt Optical rise time, fall time Optical output pulse duration ± 24 nm nm 40 ns 217 227 ns 117 125 133 ns 242 250 258 ns tTXD µs 0.1 μs < tTXD < 100 µs *) input pulse width tTXD ≥ 100 µs *) Optical overshoot topt 23 100 µs 25 % *) Typically the output pulse duration will follow the input pulse duration t and will be identical in length t. However, at pulse duration larger than 100 µs the optical output pulse duration is limited to 100 µs. This pulse duration limitation can already start at 23 µs www.vishay.com 8 Document Number 82550 Rev. 1.6, 05-Dec-05 TFDU6102 Vishay Semiconductors Recommended Circuit Diagram Vishay Semiconductors transceivers integrate a sensitive receiver and a built-in power driver. The combination of both needs a careful circuit board layout. The use of thin, long, resistive and inductive wiring should be avoided. The inputs (TXD, SD, Mode) and the output RXD should be directly (DC) coupled to the I/O circuit. V cc2 R1 R2 C1 V cc1 GND IRED Anode V cc C3 C2 Ground Mode Mode SD SD TXD TXD RXD RXD IRED Cathode 18469 Figure 1. Recommended Application Circuit The capacitor C1 is buffering the supply voltage and reduces the influence of the inductance of the power supply line. This one should be a Tantalum or other fast capacitor to guarantee the fast rise time of the IRED current. The resistor R1 is only necessary for higher operating voltages and elevated temperatures, see derating curve in figure 5, to avoid too high internal power dissipation. The capacitors C2 and C3 combined with the resistor R2 (as the low pass filter) is smoothing the supply voltage VCC1. R2, C1, C2, and C3 are optional and dependent on the quality of the supply voltages VCC1 and VCC2 and injected noise. An unstable power supply with dropping voltage during transmission may reduce sensitivity (and transmission range) of the transceiver. The placement of these parts is critical. It is strongly recommended to position C2 and C3 as close as possible to the transceiver power supply pins. An Tantalum capacitor should be used for C1 and C3 while a ceramic capacitor is used for C2. In addition, when connecting the described circuit to the power supply, low impedance wiring should be used. When extended wiring is used the inductance of the power supply can cause dynamically a voltage drop at VCC2. Often some power supplies are not apply to follow the fast current is rise time. In that case another 4.7 µF (type, see table under C1) at VCC2 will be helpful. Keep in mind that basic RF-design rules for circuit design should be taken into account. Especially longer signal lines should not be used without termination. See e.g. "The Art of Electronics" Paul Horowitz, Wienfield Hill, 1989, Cambridge University Press, ISBN: 0521370957. Table 1. Recommended Application Circuit Components Component Recommended Value C1, C3 4.7 µF, 16 V 293D 475X9 016B C2 0.1 µF, Ceramic VJ 1206 Y 104 J XXMT R1 5 V supply voltage: 2 Ω , 0.25 W ( recommended using two 1 Ω, 0.125 W resistor in series) 3.3 V supply voltage: no resistors necessary, the internal controller is able to control the current e.g. 2 x CRCW-1206-1R0-F-RT1 R2 47 Ω, 0.125 W CRCW-1206-47R0-F-RT1 Document Number 82550 Rev. 1.6, 05-Dec-05 Vishay Part Number www.vishay.com 9 TFDU6102 Vishay Semiconductors I/O and Software In the description, already different I/Os are mentioned. Different combinations are tested and the function verified with the special drivers available from the I/O suppliers. In special cases refer to the I/ O manual, the Vishay application notes, or contact directly Vishay Sales, Marketing or Application. Mode Switching The TFDU6102 is in the SIR mode after power on as a default mode, therefore the FIR data transfer rate has to be set by a programming sequence using the TXD and SD inputs as described below or selected by setting the Mode Pin. The Mode Pin can be used to statically set the mode (Mode Pin: LOW: SIR, HIGH: 0.576 Mbit/s to 4.0 Mbit/s). If not used or in standby mode, the mode input should float or should not be loaded with more than 50 pF. The low frequency mode covers speeds up to 115.2 kbit/s. Signals with higher data rates should be detected in the high frequency mode. Lower frequency data can also be received in the high frequency mode but with reduced sensitivity. To switch the transceivers from low frequency mode to the high frequency mode and vice versa, the programming sequences described below are required. After that TXD is enabled as normal TXD input and the transceiver is set for the high bandwidth (576 kbit/ s to 4 Mbit/s) mode. Setting to the Lower Bandwidth Mode (2.4 kbit/s to 115.2 kbit/s) 1. Set SD input to logic "HIGH". 2. Set TXD input to logic "LOW". Wait ts ≥ 200 ns. 3. Set SD to logic "LOW" (this negative edge latches state of TXD, which determines speed setting). 4. TXD must be held for th ≥ 200 ns. After that TXD is enabled as normal TXD input and the transceiver is set for the lower bandwidth (9.6 kbit/ s to 115.2 kbit/s) mode. 50 % SD ts th High : FIR TXD 50 % 50 % Low : SIR Setting to the High Bandwidth Mode (0.576 Mbit/s to 4.0 Mbit/s) 14873 1. Set SD input to logic "HIGH". 2. Set TXD input to logic "HIGH". Wait ts ≥ 200 ns. 3. Set SD to logic "LOW" (this negative edge latches state of TXD, which determines speed setting). 4. After waiting th ≥ 200 ns TXD can be set to logic "LOW". The hold time of TXD is limited by the maximum allowed pulse length. Figure 2. Mode Switching Timing Diagram Table 2. Truth table Inputs TXD Optical input Irradiance mW/m2 RXD Transmitter high x x weakly pulled (500 kΩ) to VCC1 0 low high x low (active) Ie www.vishay.com 10 Outputs SD high > 80 μs x high 0 low <4 high 0 low > Min. irradianceEe < Max. irradiance Ee low (active) 0 low > Max. irradiance Ee x 0 Document Number 82550 Rev. 1.6, 05-Dec-05 TFDU6102 Vishay Semiconductors Recommended Solder Profile Solder Profile for Sn/Pb soldering 260 10 s max. at 230 °C 240 °C max. 240 Temperature/°C 220 2...4 °C/s 200 180 160 °C max. 160 140 120 s...180 s 120 90 s max. 100 80 2...4 °C/s 60 40 20 0 0 50 100 150 200 250 300 Time/s 350 19431_1 Figure 3. Recommended Solder Profile for Sn/Pb soldering Lead-Free, Recommended Solder Profile The lead-frame based transceivers (all types with the name TFDUxxxx) are lead (Pb)-free and qualified for lead (Pb)-free and lead - bearing processing. In case of using a lead-bearing process we recommend a solder profile as shown in figure 4. For lead (Pb)-free solder paste like Sn-(3.0-4.0)Ag(0.5-0.9)Cu, there are two standard reflow profiles: Ramp-Soak-Spike (RSS) and Ramp-To-Spike (RTS). The Ramp-Soak-Spike profile was developed primarily for reflow ovens heated by infrared radiation. With widespread use of forced convection reflow ovens the Ramp-To-Spike profile is used increasingly. Shown below in figure 5 and figure 6 are VISHAY’s recommende profiles for use with the TFDUxxxx transceivers for lead (Pb)-free processing. 280 T ≥ 255 °C for 20 s max 260 T peak = 260 °C max. 240 T ≥ 217 °C for 50 s max 220 200 Temperature/°C 180 160 20 s 140 120 90 s...120 s 100 50 s max. 2 °C...4 °C/s 80 60 2 °C...4 °C/s 40 20 0 0 50 100 150 200 250 300 350 19261 Time/s Figure 4. Solder Profile, RSS Recommendation Document Number 82550 Rev. 1.6, 05-Dec-05 www.vishay.com 11 TFDU6102 Temperature/°C Vishay Semiconductors 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 Tpeak = 260 °C max < 4 °C/s 1.3 °C/s Time above 217 °C t ≤ 70 s Time above 250 °C t ≤ 40 s Peak temperature Tpeak = 260 °C 0 50 100 150 Time/s 200 <2 °C/s 250 300 Figure 5. RTS Recommendation A ramp-up rate less than 0.9 °C/s is not recommended. Ramp-up rates faster than 1.3 °C/s could damage an optical part because the thermal conductivity is less than compared to a standard IC. Current Derating Diagram Figure 5 shows the maximum operating temperature when the device is operated without external current limiting resistor. A power dissipating resistor of 2 Ω is recommended from the cathode of the IRED to Ground for supply voltages above 4 V. In that case the device can be operated up to 85 °C, too. 90 Ambient Temperature (°C) 85 80 75 70 65 60 55 50 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Operating Voltage [V] at duty cycle 20 % 18097 Figure 6. Temperature Derating Diagram www.vishay.com 12 Document Number 82550 Rev. 1.6, 05-Dec-05 TFDU6102 Vishay Semiconductors Package Dimensions 7x1=7 0.6 2.5 1 8 1 18470 Figure 7. Package drawing and solder footprint TFDU6102, dimensions in mm, tolerance ± 0.2 mm if not otherwise mentioned Document Number 82550 Rev. 1.6, 05-Dec-05 www.vishay.com 13 TFDU6102 Vishay Semiconductors Reel Dimensions 14017 Tape Width A max. N mm mm mm mm mm mm mm 24 330 60 24.4 30.4 23.9 27.4 www.vishay.com 14 W1 min. W2 max. W3 min. W3 max. Document Number 82550 Rev. 1.6, 05-Dec-05 TFDU6102 Vishay Semiconductors Tape Dimensions 19824 Drawing-No.: 9.700-5251.01-4 Issue: 3; 02.09.05 Figure 8. Tape drawing, TFDU6102 for top view mounting, tolerance ± 0.1 mm Document Number 82550 Rev. 1.6, 05-Dec-05 www.vishay.com 15 TFDU6102 Vishay Semiconductors 19875 Drawing-No.: 9.700-5297.01-4 Issue: 1; 04.08.05 Figure 9. Tape drawing, TFDU6102 for side view mounting, tolerance ± 0.1 mm www.vishay.com 16 Document Number 82550 Rev. 1.6, 05-Dec-05 TFDU6102 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 82550 Rev. 1.6, 05-Dec-05 www.vishay.com 17 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1