ONSEMI BC327-25

Order this document
by BC327/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS
2
Rating
Symbol
BC327
BC328
Unit
Collector – Emitter Voltage
VCEO
–45
–25
Vdc
Collector – Base Voltage
VCBO
–50
–30
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–800
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watt
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
–45
–25
—
—
—
—
–50
–30
—
—
—
—
–5.0
—
—
—
—
—
—
–100
–100
—
—
—
—
–100
–100
—
—
–100
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –10 mA, IB = 0)
Collector – Emitter Breakdown Voltage
(IC = –100 µA, IE = 0)
V(BR)CEO
BC327
BC328
Vdc
V(BR)CES
BC327
BC328
Emitter – Base Breakdown Voltage
(IE = –10 mA, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = –30 V, IE = 0)
(VCB = –20 V, IE = 0)
BC327
BC328
Collector Cutoff Current
(VCE = –45 V, VBE = 0)
(VCE = –25 V, VBE = 0)
BC327
BC328
Vdc
ICBO
nAdc
ICES
Emitter Cutoff Current
(VEB = –4.0 V, IC = 0)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
IEBO
Vdc
nAdc
nAdc
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Characteristic
Min
Typ
Max
100
100
160
40
—
—
—
—
630
250
400
—
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –100 mA, VCE = –1.0 V)
hFE
—
BC327/BC328
BC327–16/BC328–16
BC327–25/BC328–25
(IC = –300 mA, VCE = –1.0 V)
Base–Emitter On Voltage
(IC = –300 mA, VCE = –1.0 V)
VBE(on)
—
—
–1.2
Vdc
Collector – Emitter Saturation Voltage
(IC = –500 mA, IB = –50 mA)
VCE(sat)
—
—
–0.7
Vdc
Cob
—
11
—
pF
fT
—
260
—
MHz
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = –10 V, IE = 0, f = 1.0 MHz)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
Current – Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 V, f = 100 MHz)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1 0.05
0.07 0.02
0.05
P(pk)
SINGLE PULSE
0.01
0.03
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.02
0.01
0.001
θJC(t) = (t) θJC
θJC = 100°C/W MAX
θJA(t) = r(t) θJA
θJA = 375°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t, TIME (SECONDS)
1.0
2.0
5.0
10
20
50
100
Figure 1. Thermal Response
1.0 s
1.0 ms
1000
TJ = 135°C
100 µs
dc
TC = 25°C
dc
TA = 25°C
–100
–10
–1.0
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
(APPLIES BELOW RATED VCEO)
–3.0
–10
–30
VCE, COLLECTOR–EMITTER VOLTAGE
–100
Figure 2. Active Region — Safe Operating Area
2
VCE = –1.0 V
TA = 25°C
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
–1000
100
10
–0.1
–1.0
–10
–100
IC, COLLECTOR CURRENT (mA)
–1000
Figure 3. DC Current Gain
Motorola Small–Signal Transistors, FETs and Diodes Device Data
–1.0
–1.0
TA = 25°C
TJ = 25°C
–0.8
–0.8
V, VOLTAGE (VOLTS)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
IC =
–500 mA
–0.6
–0.4
IC = –300 mA
–0.2
–1.0
–10
IB, BASE CURRENT (mA)
–0.4
VCE(sat) @ IC/IB = 10
IC = –10 mA
–0.1
VBE(on) @ VCE = –1.0 V
–0.6
–0.2
IC = –100 mA
0
–0.01
0
–1.0
–100
–1000
100
+1.0
θVC for VCE(sat)
0
–1.0
–1.0
–10
–100
IC, COLLECTOR CURRENT (mA)
Figure 5. “On” Voltages
C, CAPACITANCE (pF)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
Figure 4. Saturation Region
–2.0
VBE(sat) @ IC/IB = 10
θVB for VBE
–10
–100
IC, COLLECTOR CURRENT
–1000
Figure 6. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Cib
10
Cob
1.0
–0.1
–1.0
–10
VR, REVERSE VOLTAGE (VOLTS)
–100
Figure 7. Capacitances
3
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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4
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Motorola Small–Signal Transistors, FETs and Diodes Device
Data
BC327/D