Order this document by MPSW42/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 1 EMITTER 2 3 CASE 29–05, STYLE 1 TO–92 (TO–226AE) MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 300 Vdc Collector – Base Voltage VCBO 300 Vdc Emitter – Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 Watt mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 125 °C/W Thermal Resistance, Junction to Case RqJC 50 °C/W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 300 — Vdc Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0) V(BR)CBO 300 — Vdc Emitter–Base Breakdown Voltage (IE = 100 µAdc, IC = 0) V(BR)EBO 6.0 — Vdc Collector Cutoff Current (VCB = 200 Vdc, IE = 0) ICBO — 0.1 µAdc Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO — 0.1 µAdc Characteristic OFF CHARACTERISTICS 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MPSW42 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 25 40 40 — — — Unit ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VCE(sat) — 0.5 Vdc Base–Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VBE(sat) — 0.9 Vdc fT 50 — MHz Ccb — 3.0 pF SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Collector Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) 200 hFE, DC CURRENT GAIN VCE = 10 V TJ = 125°C 100 25°C 70 –55°C 50 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 0.6 0.5 0.4 IC = 30 mA 0.3 0.1 0 0.1 V, VOLTAGE (VOLTS) RθV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 5.0 0.2 0 1.0 VCE(sat) @ IC/IB = 10 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 3. “On” Voltages 2 IC = 10 mA 0.2 0.5 1.0 10 2.0 5.0 IB, BASE CURRENT (mA) 20 30 Figure 2. Collector Saturation Region 1.4 0.8 IC = 20 mA 0.2 Figure 1. DC Current Gain 1.2 TJ = 25°C 50 70 100 2.5 2.0 IC IB 1.5 + 10 25°C to 125°C 1.0 0.5 RθVC for VCE(sat) 0 –55°C to 25°C –0.5 –1.0 –1.5 –55°C to 125°C RθVB for VBE –2.0 –2.5 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 4. Temperature Coefficients Motorola Small–Signal Transistors, FETs and Diodes Device Data C, CAPACITANCE (pF) 100 70 50 TJ = 25°C Ceb 30 20 10 7.0 5.0 Ccb 3.0 2.0 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) 100 200 f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) MPSW42 Figure 5. Capacitance 100 70 50 TJ = 25°C VCE = 20 V f = 20 MHz 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 6. Current–Gain — Bandwidth Product IC, COLLECTOR CURRENT (mA) 1k CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 500 1.0 ms 200 1.0 s 100 µs 100 50 TA = 25°C 20 DUTY CYCLE ≤ 10% 10 10 20 50 100 200 300 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 7. Active Region — Safe Operating Area Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MPSW42 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE P L F K X X DIM A B C D F G H J K L N P R V D G H J V 1 2 3 N C SECTION X–X N CASE 029–05 (TO–226AE) ISSUE AD INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.135 ––– 0.135 ––– MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.56 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 3.43 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. 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