MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS Features • • • • • • • Lead Formed for Surface Mount Applications in Plastic Sleeves Straight Lead Version in Plastic Sleeves (“1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Similar to Popular TIP31 and TIP32 Series Epoxy Meets UL 94, V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V These are Pb−Free Packages MARKING DIAGRAMS 4 1 2 MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage VCEO MJD31, MJD32 MJD31C, MJD32C Collector−Base Voltage VCB MJD31, MJD32 MJD31C, MJD32C Emitter−Base Voltage Max Unit Vdc 40 100 40 100 1 5 Vdc Collector Current − Continuous − Peak IC 3 5 Adc Base Current IB 1 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 15 0.12 W W/°C Total Power Dissipation @ TA = 25°C Derate above 25°C PD 1.56 0.012 W W/°C −65 to + 150 °C TJ, Tstg AYWW J3xxG DPAK−3 CASE 369D STYLE 1 YWW J3xxG 4 Vdc VEB Operating and Storage Junction Temperature Range 3 DPAK CASE 369C STYLE 1 2 3 A Y WW xx G = Site Code = Year = Work Week = 1, 1C, 2, or 2C = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 8.3 °C/W Thermal Resistance, Junction−to−Ambient* RqJA 80 °C/W TL 260 °C Lead Temperature for Soldering Purposes *These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2011 February, 2011 − Rev. 8 1 Publication Order Number: MJD31/D MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit 40 100 − − ICEO − 50 mAdc Collector Cutoff Current (VCE = Rated VCEO, VEB = 0) ICES − 20 mAdc Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO − 1 mAdc 25 10 − 50 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) MJD31, MJD32 MJD31C, MJD32C VCEO(sus) Vdc MJD31, MJD32 MJD31C, MJD32C ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 1 Adc, VCE = 4 Vdc) (IC = 3 Adc, VCE = 4 Vdc) − Collector−Emitter Saturation Voltage (IC = 3 Adc, IB = 375 mAdc) VCE(sat) − 1.2 Vdc Base−Emitter On Voltage (IC = 3 Adc, VCE = 4 Vdc) VBE(on) − 1.8 Vdc Current Gain − Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz) fT 3 − MHz Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz) hfe 20 − − DYNAMIC CHARACTERISTICS 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 2. fT = ⎪hfe⎪• ftest. http://onsemi.com 2 MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) TYPICAL CHARACTERISTICS VCC +30 V PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 RC 25 ms 2 20 +11 V RB SCOPE 0 1.5 15 TA (SURFACE MOUNT) TC 1 10 0.5 5 0 0 25 tr, tf ≤ 10 ns DUTY CYCLE = 1% 50 75 100 T, TEMPERATURE (°C) 125 150 Figure 2. Switching Time Test Circuit 2 0.3 3 2 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V IB1 = IB2 IC/IB = 10 ts′ = ts - 1/8 tf TJ = 25°C ts′ 1 t, TIME (s) μ t, TIME (s) μ 0.7 0.5 -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA REVERSE ALL POLARITIES FOR PNP. Figure 1. Power Derating 1 D1 51 -9 V tr @ VCC = 10 V tf @ VCC = 30 V 0.7 0.5 0.3 0.2 tf @ VCC = 10 V 0.1 0.07 0.05 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.03 0.02 0.03 1 0.7 0.5 0.3 0.2 td @ VBE(off) = 2 V 0.05 0.07 0.1 0.5 0.7 0.03 0.03 1 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Turn−On Time Figure 4. Turn−Off Time 2 3 D = 0.5 0.2 RqJC(t) = r(t) RqJC RqJC = 8.33°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.1 0.1 0.05 0.07 0.05 0.01 0.03 0.3 0.1 0.07 0.05 SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 Figure 5. Thermal Response http://onsemi.com 3 20 30 50 100 200 300 500 1k MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN) 1000 10 1 0.01 0.6 VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) −55°C 0.1 1 10 25°C 100 10 1 0.01 150°C 0.2 25°C 0.1 −55°C 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) 1.2 1.1 0.9 1.0 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.01 0.1 1 −55°C 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 10 Figure 9. Base−Emitter Saturation Voltage VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE = 5 V IC/IB = 10 1.0 Figure 8. Collector−Emitter Saturation Voltage VBE(on), BASE−EMITTER ON VOLTAGE (V) 10 Figure 7. DC Current Gain at VCE = 2 V 0.3 0.2 0.001 1 Figure 6. DC Current Gain at VCE = 4 V 0.4 1.1 0.1 IC, COLLECTOR CURRENT (A) 0.5 1.2 −55°C IC, COLLECTOR CURRENT (A) IC/IB = 10 0 0.001 VCE = 2 V 150°C hFE, DC CURRENT GAIN 25°C 100 1000 VCE = 4 V VBE(sat), BASE−EMITT SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 150°C 10 2 TA = 25°C 1.6 1.2 100 mA 500 mA 0.8 IC = 3 A 1A 0.4 10 mA 0 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 10. Base-Emitter “On” Voltage Figure 11. Collector Saturation Region http://onsemi.com 4 1000 MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN) Cib 100 Cob 10 100 fT, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) TA = 25°C 0.1 1 10 VR, REVERSE VOLTAGE (V) VCE = 5 V TA = 25°C 10 1 0.001 1 100 Figure 12. Capacitance 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 13. Current−Gain−Bandwidth Product 10 IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 1000 1 0.1 0.01 1 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 14. Safe Operating Area http://onsemi.com 5 100 10 MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) TYPICAL CHARACTERISTICS − MJD32, MJD32C (PNP) 1000 hFE, DC CURRENT GAIN 100 −55°C 10 1 0.01 0.9 1.4 0.4 0.3 0.2 25°C 0.1 0 0.001 0.01 0.1 1 10 1.2 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0.001 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 17. Collector−Emitter Saturation Voltage Figure 18. Base−Emitter Saturation Voltage VCE = 5 V 1.0 0.9 150°C 25°C 0.6 −55°C 0.3 0.2 0.001 1 IC/IB = 10 150°C 0.5 0.4 0.1 Figure 16. DC Current Gain at VCE = 2 V 0.6 0.5 0.01 Figure 15. DC Current Gain at VCE = 4 V −55°C 0.7 10 IC, COLLECTOR CURRENT (A) IC/IB = 10 0.8 −55°C 1 10 0.7 1.1 100 IC, COLLECTOR CURRENT (A) 0.8 1.2 VBE(on), BASE−EMITTER ON VOLTAGE (V) 1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) 1 0.1 VCE = 2 V 25°C 150°C 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN 1000 VCE = 4 V 25°C 150°C 2 TA = 25°C 500 mA 1.6 100 mA 1.2 1A IC = 3 A 0.8 0.4 0 10 mA 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Figure 20. Collector Saturation Region Figure 19. Base−Emitter “On” Voltage http://onsemi.com 6 1000 MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) TYPICAL CHARACTERISTICS Cib 100 Cob 10 1 0.1 1 10 100 fT, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) TA = 25°C VCE = 5 V TA = 25°C 10 1 0.001 100 VR, REVERSE VOLTAGE (V) 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 21. Capacitance Figure 22. Current−Gain−Bandwidth Product 10 IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 1000 1 ms 1 1s 0.1 0.01 1 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 23. Safe Operating Area http://onsemi.com 7 100 10 MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) ORDERING INFORMATION Package Type Package Shipping† MJD31CG DPAK (Pb−Free) 369C 75 Units / Rail MJD31C1G DPAK−3 (Pb−Free) 369D 75 Units / Rail MJD31CRLG DPAK (Pb−Free) 369C 1800 Tape & Reel MJD31CT4G DPAK (Pb−Free) 369C 2500 Tape & Reel MJD31T4G DPAK (Pb−Free) 369C 2500 Tape & Reel MJD32CG DPAK (Pb−Free) 369C 75 Units / Rail MJD32CRLG DPAK (Pb−Free) 369C 1800 Tape & Reel DPAK 369C 2500 Tape & Reel MJD32CT4G DPAK (Pb−Free) 369C 2500 Tape & Reel MJD32RLG DPAK (Pb−Free) 369C 1800 Tape & Reel MJD32T4G DPAK (Pb−Free) 369C 2500 Tape & Reel Device MJD32CT4 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 8 MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 3.0 0.118 1.6 0.063 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 9 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) PACKAGE DIMENSIONS IPAK CASE 369D−01 ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 10 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJD31/D