ONSEMI NSS40301MZ4_10

NSS40301MZ4
Bipolar Power Transistors
40 V, 3.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (VCE(sat)) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
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NPN TRANSISTOR
3.0 AMPERES
40 VOLTS, 2.0 WATTS
C 2,4
B1
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
E3
Schematic
Compliant
MARKING
DIAGRAM
AYW
40301G
SOT−223
CASE 318E
STYLE 1
A
Y
W
40301
G
1
= Assembly Location
Year
= Work Week
= Specific Device Code
= Pb−Free Package
PIN ASSIGNMENT
4
C
B
C
E
1
2
3
Top View Pinout
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
September, 2010 − Rev. 1
1
Publication Order Number:
NSS40301MZ4/D
NSS40301MZ4
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MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VCEO
40
Vdc
Collector−Base Voltage
VCB
40
Vdc
Emitter−Base Voltage
VEB
6.0
Vdc
Base Current − Continuous
IB
1.0
Adc
Collector Current − Continuous
Collector Current − Peak
IC
3.0
5.0
Adc
Total Power Dissipation
Total PD @ TA = 25°C mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material
Total PD @ TA = 25°C mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material
PD
Collector−Emitter Voltage
Operating and Storage Junction Temperature Range
TJ, Tstg
2.0
0.80
– 55 to + 150
W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
− Junction−to−Ambient on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material
− Junction−to−Ambient on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds
Symbol
Max
RqJA
RqJA
64
155
TL
260
Unit
°C/W
°C
ORDERING INFORMATION
Package
Shipping†
NSS40301MZ4T1G
SOT−223
(Pb−Free)
1000 / Tape & Reel
NSS40301MZ4T3G
SOT−223
(Pb−Free)
4000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NSS40301MZ4
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
40
Vdc
Emitter−Base Voltage (IE = 50 mAdc, IC = 0 Adc)
VEBO
6.0
Vdc
Collector Cutoff Current (VCB = 40 Vdc)
ICBO
100
nAdc
Emitter Cutoff Current (VBE = 6.0 Vdc)
IEBO
100
nAdc
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc)
ON CHARACTERISTICS (Note 1)
Collector−Emitter Saturation Voltage
(IC = 0.5 Adc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 20 mAdc)
(IC = 3.0 Adc, IB = 0.3 Adc)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
VBE(sat)
Base−Emitter On Voltage
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
DC Current Gain
(IC = 0.5 Adc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
(IC = 3.0 Adc, VCE = 1.0 Vdc)
hFE
0.050
0.100
0.200
1.0
0.9
220
200
100
Vdc
Vdc
Vdc
500
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, f = 1.0 MHz)
Cob
Input Capacitance
(VEB = 5.0 Vdc, f = 1.0 MHz)
Cib
Current−Gain − Bandwidth Product (Note 2)
(IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz)
fT
25
170
215
PD, POWER DISSIPATION (W)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. fT = |hFE| • ftest
2.5
2.0
TC
1.5
1.0
TA
0.5
0
25
50
75
100
TJ, TEMPERATURE (°C)
Figure 1. Power Derating
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3
125
150
pF
pF
MHz
NSS40301MZ4
TYPICAL CHARACTERISTICS
700
VCE = 1 V
150°C
500
400
25°C
300
200
−55°C
100
500
300
−55°C
200
0.01
0.1
1
0
0.001
10
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
Figure 3. DC Current Gain
10
1
IC/IB = 10
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
150°C
25°C
0.1
−55°C
0.01
0.001
0.01
IC, COLLECTOR CURRENT (A)
1
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
25°C
400
100
0
0.001
0.001
0.01
0.1
1
IC/IB = 50
25°C
−55°C
0.01
10
0.001
VBE(on), EMITTER−BASE VOLTAGE (V)
IC = 3 A
2A
0.1
1A
0.5 A
0.1 A
0.01
0.1
1
10
Figure 5. Collector−Emitter Saturation Voltage
1
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage
0.01
0.0001
150°C
0.1
IC, COLLECTOR CURRENT (A)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE = 4 V
150°C
600
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
600
0.1
1.0
1.2
VCE = 2 V
1.0
−55°C
0.8
0.6
25°C
0.4
0.2
0
0.001
IB, BASE CURRENT (A)
150°C
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 6. Collector Saturation Region
Figure 7. VBE(on) Voltage
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4
10
NSS40301MZ4
TYPICAL CHARACTERISTICS
1.4
IC/IB = 10
1.2
VBE(sat), EMITTER−BASE
SATURATION VOLTAGE (V)
VBE(sat), EMITTER−BASE
SATURATION VOLTAGE (V)
1.4
1.0
−55°C
0.8
0.6
25°C
0.4
150°C
0.2
0
0.001
0.01
0.1
1
1.0
−55°C
0.8
0.6
25°C
0.4
150°C
0.2
0
10
IC/IB = 50
1.2
0.001
0.01
Figure 8. Base−Emitter Saturation Voltage
Cobo, OUTPUT CAPACITANCE (pF)
Cibo, INPUT CAPACITANCE (pF)
100
TJ = 25°C
ftest = 1 MHz
350
300
250
200
150
100
50
0
1
2
3
4
5
6
7
60
40
20
0
10
20
30
40
50
60
70
VEB, EMITTER BASE VOLTAGE (V)
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance
Figure 11. Output Capacitance
80
90
10
TJ = 25°C
ftest = 1 MHz
VCE = 10 V
IC, COLLECTOR CURRENT (A)
fTau, CURRENT BANDWIDTH
PRODUCT (MHz)
TJ = 25°C
ftest = 1 MHz
80
0
8
240
200
10
Figure 9. Base−Emitter Saturation Voltage
450
0
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
400
0.1
160
120
80
40
0
0.001
0.01
0.1
1
10
0.5 ms
1 ms
1
10 ms
100 ms
0.1
0.01
1
IC, COLLECTOR CURRENT (A)
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 12. Current−Gain Bandwidth Product
Figure 13. Safe Operating Area
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5
100
NSS40301MZ4
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
1
2
3
b
e1
e
A1
C
q
A
0.08 (0003)
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
E
q
L
STYLE 1:
PIN 1.
2.
3.
4.
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NSS40301MZ4/D