NSS40301MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS C 2,4 B1 Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS E3 Schematic Compliant MARKING DIAGRAM AYW 40301G SOT−223 CASE 318E STYLE 1 A Y W 40301 G 1 = Assembly Location Year = Work Week = Specific Device Code = Pb−Free Package PIN ASSIGNMENT 4 C B C E 1 2 3 Top View Pinout ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2010 September, 2010 − Rev. 1 1 Publication Order Number: NSS40301MZ4/D NSS40301MZ4 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit VCEO 40 Vdc Collector−Base Voltage VCB 40 Vdc Emitter−Base Voltage VEB 6.0 Vdc Base Current − Continuous IB 1.0 Adc Collector Current − Continuous Collector Current − Peak IC 3.0 5.0 Adc Total Power Dissipation Total PD @ TA = 25°C mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material Total PD @ TA = 25°C mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material PD Collector−Emitter Voltage Operating and Storage Junction Temperature Range TJ, Tstg 2.0 0.80 – 55 to + 150 W °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case − Junction−to−Ambient on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material − Junction−to−Ambient on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds Symbol Max RqJA RqJA 64 155 TL 260 Unit °C/W °C ORDERING INFORMATION Package Shipping† NSS40301MZ4T1G SOT−223 (Pb−Free) 1000 / Tape & Reel NSS40301MZ4T3G SOT−223 (Pb−Free) 4000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NSS40301MZ4 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 40 Vdc Emitter−Base Voltage (IE = 50 mAdc, IC = 0 Adc) VEBO 6.0 Vdc Collector Cutoff Current (VCB = 40 Vdc) ICBO 100 nAdc Emitter Cutoff Current (VBE = 6.0 Vdc) IEBO 100 nAdc OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc) ON CHARACTERISTICS (Note 1) Collector−Emitter Saturation Voltage (IC = 0.5 Adc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 20 mAdc) (IC = 3.0 Adc, IB = 0.3 Adc) VCE(sat) Base−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc) VBE(sat) Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) DC Current Gain (IC = 0.5 Adc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) (IC = 3.0 Adc, VCE = 1.0 Vdc) hFE 0.050 0.100 0.200 1.0 0.9 220 200 100 Vdc Vdc Vdc 500 DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, f = 1.0 MHz) Cob Input Capacitance (VEB = 5.0 Vdc, f = 1.0 MHz) Cib Current−Gain − Bandwidth Product (Note 2) (IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz) fT 25 170 215 PD, POWER DISSIPATION (W) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. fT = |hFE| • ftest 2.5 2.0 TC 1.5 1.0 TA 0.5 0 25 50 75 100 TJ, TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 3 125 150 pF pF MHz NSS40301MZ4 TYPICAL CHARACTERISTICS 700 VCE = 1 V 150°C 500 400 25°C 300 200 −55°C 100 500 300 −55°C 200 0.01 0.1 1 0 0.001 10 0.1 1 IC, COLLECTOR CURRENT (A) Figure 2. DC Current Gain Figure 3. DC Current Gain 10 1 IC/IB = 10 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 150°C 25°C 0.1 −55°C 0.01 0.001 0.01 IC, COLLECTOR CURRENT (A) 1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 25°C 400 100 0 0.001 0.001 0.01 0.1 1 IC/IB = 50 25°C −55°C 0.01 10 0.001 VBE(on), EMITTER−BASE VOLTAGE (V) IC = 3 A 2A 0.1 1A 0.5 A 0.1 A 0.01 0.1 1 10 Figure 5. Collector−Emitter Saturation Voltage 1 0.001 0.01 IC, COLLECTOR CURRENT (A) Figure 4. Collector−Emitter Saturation Voltage 0.01 0.0001 150°C 0.1 IC, COLLECTOR CURRENT (A) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 4 V 150°C 600 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 600 0.1 1.0 1.2 VCE = 2 V 1.0 −55°C 0.8 0.6 25°C 0.4 0.2 0 0.001 IB, BASE CURRENT (A) 150°C 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 6. Collector Saturation Region Figure 7. VBE(on) Voltage http://onsemi.com 4 10 NSS40301MZ4 TYPICAL CHARACTERISTICS 1.4 IC/IB = 10 1.2 VBE(sat), EMITTER−BASE SATURATION VOLTAGE (V) VBE(sat), EMITTER−BASE SATURATION VOLTAGE (V) 1.4 1.0 −55°C 0.8 0.6 25°C 0.4 150°C 0.2 0 0.001 0.01 0.1 1 1.0 −55°C 0.8 0.6 25°C 0.4 150°C 0.2 0 10 IC/IB = 50 1.2 0.001 0.01 Figure 8. Base−Emitter Saturation Voltage Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 100 TJ = 25°C ftest = 1 MHz 350 300 250 200 150 100 50 0 1 2 3 4 5 6 7 60 40 20 0 10 20 30 40 50 60 70 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 10. Input Capacitance Figure 11. Output Capacitance 80 90 10 TJ = 25°C ftest = 1 MHz VCE = 10 V IC, COLLECTOR CURRENT (A) fTau, CURRENT BANDWIDTH PRODUCT (MHz) TJ = 25°C ftest = 1 MHz 80 0 8 240 200 10 Figure 9. Base−Emitter Saturation Voltage 450 0 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 400 0.1 160 120 80 40 0 0.001 0.01 0.1 1 10 0.5 ms 1 ms 1 10 ms 100 ms 0.1 0.01 1 IC, COLLECTOR CURRENT (A) 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 12. Current−Gain Bandwidth Product Figure 13. Safe Operating Area http://onsemi.com 5 100 NSS40301MZ4 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE 1 2 3 b e1 e A1 C q A 0.08 (0003) DIM A A1 b b1 c D E e e1 L L1 HE E q L STYLE 1: PIN 1. 2. 3. 4. L1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0° MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 −−− −−− 1.75 2.00 7.00 7.30 10° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 −−− 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 10° BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NSS40301MZ4/D